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  • American Institute of Physics (AIP)  (19)
  • Nature Publishing Group  (10)
  • 1990-1994  (29)
  • 1
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report growth of (InAs)1(AlAs)1 and (InAs)2(AlAs)2 strained layer superlattices by migration enhanced epitaxy. The samples were grown on InP (001) substrates and characterized by Raman spectroscopy, x-ray diffraction, and transmission electron microscopy. Satellite peaks in the x-ray data confirm the intended periodicity and indicate the presence of some disorder in the monolayer sample. The energies of the zone folded and quantum confined optic phonons are in reasonable agreement with calculations based on one-dimensional elastic continuum and linear chain models.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 358-361 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report the first use of Raman scattering to study GaAs/AlGaAs graded index-separate confinement heterostructure quantum-well lasers. We have used a forward scattering geometry in which the waveguide is endfired, and the light emerging from the opposite end facet is collected and spectrally analyzed. The probe is confined by the waveguide and thus interacts with the entire laser cavity. Because Raman scattering occurs in all regions of the heterostructure to which the optical mode is confined, this technique is a useful indication of the mode profile in waveguide heterostructures. We observe inhomogeneously broadened longitudinal and transverse optical phonons in the graded region.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 3
    Digitale Medien
    Digitale Medien
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 92 (1990), S. 5034-5046 
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: We have performed Monte Carlo simulations in order to study the ordered structures formed by CO on Pt{111} at high coverage. The results are compared with LEED and infrared (IR) spectra. The calculations are based on a recently constructed potential energy surface for CO on Pt{111} and a CO–CO interaction potential deduced from the variation of the CO binding energy with coverage. Ordered adsorbate structures are obtained at θ=0.5, 0.6, 0.67, and 0.71 in the simulations. The so-called compression structures (θ〉0.5) are stabilized by the energy lowering which results when CO molecules at the high density domain walls move away from the on-top sites because of the unbalanced repulsive CO–CO interactions. If this relaxation channel is blocked, disordered adsorbate structures occur. We present the resulting (θ, T) phase diagram and discuss its qualitative properties. The LEED data show ordered structures at θ=0.5, 0.6, and 0.71, but, in contrast to previous results, or perhaps to the interpretation thereof, not at θ=0.67. The IR data show that the compression structures still consist of CO molecules adsorbed on distinct surface sites. Finally, we discuss the changes in adsorbate structures which would result from variations in the CO–substrate potential energy surface and, in the light of these results, briefly look at the Cu{111}–CO, Ni{111}–CO, and Pd{111}–CO chemisorption systems.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 4
    Digitale Medien
    Digitale Medien
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 94 (1991), S. 8592-8599 
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: The electronic structure of the surface carbonate species adsorbed on Ag{110} has been studied with angle-resolved photoemission using synchrotron radiation. Despite the low symmetry of the surface complex (Cs) and more than one azimuthal orientation of the vertical symmetry plane, it has been possible to assign the adsorbate-induced levels. Recent semiempirical quantum chemical calculations have proved to be of considerable assistance in this process. The resonant behavior observed for the 3a‘ level is discussed in the context of photoelectron data for the free BF3 molecule, which is isoelectronic with CO2−3. The Cs symmetry pertaining in the present experiment is compared with the effective D3h symmetry observed in x-ray-absorption spectroscopy of the same system.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 5
    Digitale Medien
    Digitale Medien
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 94 (1991), S. 5299-5305 
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: We have measured photoionization cross sections and photoelectron asymmetry parameters for each of the core levels of N2O. We have also carried out frozen- and relaxed-core Hartree–Fock studies of these cross sections so as to better understand the underlying shape resonant structure and the role of electronic relaxation in these processes. A broad shape resonance is observed in each of the core-hole cross sections at 10-20 eV kinetic energy and there is some evidence of a second shape resonance near the thresholds, an energy region which is not accessible experimentally. The cross sections also exhibit site-specific behavior with maxima at widely separated photoelectron kinetic energies. These differences probably arise from the fact that photoelectron matrix elements for different core orbitals probe different regions of the shape resonant orbital which extends over the entire molecule. Although the higher energy shape resonances appear quite similar, Hartree–Fock studies show that the central nitrogen resonance is more sensitive to effects of electronic relaxation than the terminal nitrogen or oxygen resonances. Large differences are also seen between the photoelectron asymmetry parameters for the central and terminal atoms.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 6
    Digitale Medien
    Digitale Medien
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 95 (1991), S. 3930-3938 
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: The photochemistry of chemisorbed CH3Br on Pt{111} has been investigated using high resolution electron energy loss spectroscopy (HREELS) and thermal desorption. The primary photon-induced reaction involves the cleavage of the C–Br bond, giving rise to chemisorbed CH3 and Br, both of which can be identified in HREELS. From the angular dependence of the loss peaks, the symmetry of the CH3 surface complex is shown to be C3v. HBr can also be identified in subsequent thermal desorption. Experiments performed directly with HBr on Pt{111} indicate that molecular HBr adsorbs dissociatively on this surface. This result, in combination with observations of the C–H vibrational mode as a function of temperature, shows that the production of HBr arises from a secondary surface reaction between Br and CHx fragments. Based on the wavelength dependence of the fragmentation cross section and the photoemission spectrum of adsorbed CH3Br the primary photon-induced reaction to a charge transfer excitation is ascribed.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 7
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 5459-5463 
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: A laboratory-scale arc furnace encompassing a nonconsumable electrode and a cold hearth and operating at inert gas pressures of up to 20 bar is described. Using this equipment, weight losses due to volatilization when melting high vapor pressure metallic materials have been reduced to about 20% of those encountered with a conventional arc furnace operating at 1 bar. The arc furnace has been designed to be evacuable to high vacuum levels, as well as attaining high pressures, so that specimen purity can be retained by thoroughly evacuating and degassing the system prior to admitting inert gas and melting. Increases in gas pressure have been found to have a pronounced effect on the stability of the arc, especially at low arc currents, and to achieve minimum volatilization losses a balance is required between pressure and arc current for a particular sample.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 8
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3429-3442 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report the growth of high-quality As-based ternary and quaternary alloys lattice matched to InP using a valved arsenic source that can post-heat the As beam after evaporation. We find that the optimum group-V-to-group-III beam-equivalent pressure ratio for growth of (In,Ga)As alloys using this source is considerably lower than values reported previously for growth using conventional As4 sources. Consequently, high-quality (In,Ga)As, (In,Al)As, and (In,Al,Ga)As alloys (and quantum wells made from these alloys) can be grown under the same growth conditions, i.e., substrate temperatures between about 525 °C and 540 °C and V/III pressure ratios between 10:1 and 15:1. Thick-film alloys and multiple-quantum-well structures grown under these conditions show superior structural and optical quality. Strong excitonic features are observed in the room-temperature absorption spectra of a number of multiple-quantum-well structures with well widths ranging from 30 A(ring) to 170 A(ring) . Calculations of the exciton transition energies using a simple empirical two-band model are in excellent agreement with experiment, even for a structure containing quantum wells in tensile strain in which the ordering of ground-state light- and heavy-hole excitons is reversed. The optical absorption spectrum of a 50-A(ring) -period (In,Ga)As/(In,Al)As superlattice shows room-temperature excitons involving electronic states at both the bottom and top of the minibands. Exciton line widths for these quantum-well structures, measured using low-temperature photoluminescence, are consistent with the limits imposed by random alloy fluctuations. We tentatively explain the lower optimum V/III pressure ratio for growth of (In,Ga)As in terms of the increase in kinetic energy of As4 molecules (compared with the kinetic energy of molecules from a conventional As4 source) and the consequent enhancement in the efficiency of dissociation of As4 molecules into As2 molecules at the growing surface.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 9
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2215-2226 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We present a simple model for photocurrent spectroscopy of quantum-well p-i-n diodes that provides a quantitatively accurate desciption of the dependence of photocurrent on absorption coefficient and applied bias. The model incorporates the transit-time effect described previously [R. P. Leavitt and J. L. Bradshaw, Appl. Phys. Lett. 59, 2433 (1991)] as a limiting case. It also includes the two major effects of residual background doping in the intrinsic region of the diode: nonuniform electric fields, which affect the transport of carriers, and incomplete depletion at low electric fields, which reduces the amount of photocurrent collected. We show that the background-doping effect alone can mimic the transit-time effects: reduction in the overall carrier collection efficiency, saturation of photocurrent spectral features, and the presence of minima in photocurrent where absorption spectra show maxima. We obtain a closed-form expression for the photocurrent in the general case where both transit-time and background-doping effects are significant. Excellent agreement is obtained between model calculations and experimental room-temperature photocurrent spectra for an 89-period 100-A(ring) GaAs/100-A(ring) Al0.3Ga0.7As multiple-quantum-well diode, where the background doping density, the effective electron mobility, and the built-in potential are treated as adjustable parameters. The background doping density and the built-in potential obtained from the fit are in excellent agreement with independent measurements. We apply the model to predict the dependence of photocurrent on the intrinsic-region thickness of the diode. We also show a dramatic asymmetry between photocurrent spectra measured with light incident from the front and from the back of the diode, and we discuss the impact of this asymmetry on the performance of self-electro-optic-effect devices. We also find good agreement between the model predictions and the photocurrent results of Whitehead et al. [Appl. Phys. Lett. 52, 345 (1988)]. Further, our model qualitatively describes the dependence of the photoluminescence intensity on electric fields in multiple-quantum-well p-i-n diodes.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 10
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1353-1355 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Previously reported chemical vapor deposition of 3C-SiC on 6H-SiC has resulted in films with a high density of double positioning boundaries (DPBs). We have found that growth on as-grown faces of 6H-SiC crystals can yield films that are largely free of DPBs. The (111) 3C-SiC films, up to 12 μm thick, were evaluated by optical and electron microscopy and low-temperature photoluminescence (LTPL). The LTPL spectra of the films were similar to those of high quality Lely-grown 3C-SiC.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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