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  • 2015-2019  (71)
  • 1990-1994  (52)
  • 1985-1989  (42)
  • 1940-1944  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Studies of molecular alignments of monolayers deposited by a chemical adsorption technique (1991)
    s.l. : American Chemical Society
    Langmuir 7 (1991), S. 1473-1477 
    Details
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/la00055a031
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  • 2
    Electronic Resource
    Electronic Resource
    Control of molecular tilt angles in oriented monolayers deposited by a chemical adsorption technique and application of the monolayers as an alignment film (1991)
    s.l. : American Chemical Society
    Langmuir 7 (1991), S. 1468-1472 
    Details
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/la00055a030
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  • 3
    Electronic Resource
    Electronic Resource
    Photoionization cross section of InP:Fe (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3933-3936 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spectral dependence of the photoionization cross section of Fe doped in InP is determined by photocapacitance spectroscopy. The optical process of the carrier emission from the deep acceptor level of Fe is discussed from the results. For the crystal-field-split level of Fe2+:5E, the photoionization cross sections for the fundamental transitions of 5E→Γ1 and Γ15→5E are adequately described by the Lucovsky model. Those optical thresholds are 0.63 and 0.78 eV, respectively, at 77 K. In comparison with the deep-level transient spectroscopy measurements, the following conclusions are obtained. The energy separation between the Fe acceptor level and the conduction-band edge is constant, but that between the Fe level and the valence-band edge varies correspondingly to the temperature variation of the InP band-gap energy. The fact that there is no difference between the optical and thermal activation energies for the 5E→Γ1 transition indicates that the Fe acceptor level is not perturbed by the InP lattice vibration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343358
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  • 4
    Electronic Resource
    Electronic Resource
    Photoionization cross section of In0.49Ga0.51P:Fe (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 529-531 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We determined spectral dependence of the photoionization cross section of the Fe acceptor in In0.49Ga0.15P by photocapacitance spectroscopy. As a result of the alloy effect we observed the nonexponential photocapacitance transient. We treated it with a model of the energetically broadened defect level. Optical thresholds for 5E and 5T2 of the crystal-field-split Fe acceptor level are 0.78 and 1.15 eV at 77 K. The small difference of 40 meV between the optical and thermal activation energies for the transition from the valence band to 5E reveals the weak coupling between the Fe acceptor level and the lattice vibration of InGaP.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100920
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  • 5
    Electronic Resource
    Electronic Resource
    Room-temperature exciton optical absorption peaks in InGaAsP/InP multiple quantum wells (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1353-1355 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We grew In1−xGaxAsyP1−y/InP quantum wells (QWs) by low-pressure metalorganic vapor phase epitaxy. The In1−xGaxAsyP1−y layer was closely lattice matched to InP with a composition of y=0.9 (x=0.47y). We investigated structural imperfections such as composition fluctuations, interface roughness, and nonperiodicity analyzing the low-temperature photoluminescence linewidth. We found that the InGaAsP layer composition fluctuated, causing about 5 meV inhomogeneity in the exciton energy level in QWs wider than about 3 nm. Since we obtained very smooth interfaces with less than one monolayer of fluctuation and excellent periodicity by lowering growth temperature to 570 °C, the inhomogeneity of the exciton energy level could be held at 6 meV for 20-period 10-nm multiple QWs. As a result, despite composition fluctuations, a clear room-temperature exciton optical absorption peak was observed at 1.5 μm for the first time to our knowledge.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100713
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  • 6
    Electronic Resource
    Electronic Resource
    Variation in Doubled Haploid Plants of Wheat Obtained through Wheat (Triticum aestivum) × Maize (Zea mays) Crosses (1993)
    Oxford, UK : Blackwell Publishing Ltd
    Plant breeding 111 (1993), S. 0 
    Details
    ISSN: 1439-0523
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Variation was investigated in 110 doubled haploid (DH) lines of wheat derived from wheat × maize crosses. Field observation revealed visible variations in 15 DH2 lines such as extreme dwarfism, low seed fertility, alteration of spike type and stripes. Six agronomic traits, i.e., heading date, spike number/ plant, culm length, spike length, seed fertility and grain weight were statistically analyzed in the DH2 and DH3 generations. Out of the 88 DH2 lines/DH3 groups, 26 %/64 % showed significant differences from the parental variety in the means of one or more traits. Ranges of the DH3 lines were larger than those of the DH2 lines, except for spike number/plant. Furthermore, analyses of variance within and between DH lines showed the presence of heterogeneity/heterozygosity in the DH2 lines/plants. These results indicated the occurrence of gametoclonal variation in the DH lines. It is considered that most of the variations detected were due to the colchicine treatment rather than to the 2,4-D treatment or in vitro culture.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1439-0523.1993.tb00617.x
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  • 7
    Electronic Resource
    Electronic Resource
    Low frequency (1/f) noise in YBa2Cu3O7−δ grain boundary junction dc superconducting quantum interference devices (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1895-1898 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied low frequency (1/f) noise of YBa2Cu3O7−δ dc superconducting quantum interference devices (SQUIDs) on SrTiO3 bicrystal substrates. 1/f flux noise, either measured at different temperatures for optimized bias current or measured at 77 K for different bias currents, is almost constant. These facts imply that 1/f noise mainly comes from fluctuations of the critical current of the Josephson junction that form the SQUID. Also, we explain the critical current fluctuations in the junction by an equilibrium temperature fluctuation model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357714
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  • 8
    Electronic Resource
    Electronic Resource
    Resistometric and Mössbauer studies on structural relaxation in (Ni,Fe)75Si10B15 metallic glasses (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2091-2099 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural relaxation in (Ni,Fe)75Si10B15 metallic glasses has been studied by measuring resistivity changes and Mössbauer spectra. The sign and magnitude of resistivity changes due to the relaxation depend strongly on the Ni/Fe ratio. The isothermal resistivity changes fit well the nonlinear kinetic form, indicating that the fluctuation of local environments of Ni and Fe atoms is very large and Ni and Fe atoms in Ni-Fe-Si-B metallic glasses are mobile compared with Co and Fe atoms in Co-Fe-Si-B metallic glasses. The compositional dependence and kinetic parameters for reversible resistivity changes and Mössbauer spectra strongly support that the reversible structural relaxation corresponds to the reversible short-range ordering between Ni and Fe atoms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346563
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  • 9
    Electronic Resource
    Electronic Resource
    Experimental analysis of phase-mode Josephson digital circuits (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 949-955 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present experimental results on elementary phase-mode Josephson circuits whose combinations enable us to construct a total data processing system which is expected to be superior to the ordinary voltage-mode Josephson computer in several respects. In the phase-mode system a device depends for its operation on the existence of many stable states differing from one another by integer multiples of 2π in the phase plane. The total system is considered to be a prototype of quantum computer systems where physical quantum states are employed as logic states of information processing. By using the fabricated elementary circuits composed of SQUIDs and two types of branching points we have experimentally confirmed and, fan-out, fan-in operations, etc. We have also proposed an inhibit circuit, and presented the experimental results on the inhibit circuit.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343524
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  • 10
    Electronic Resource
    Electronic Resource
    Analysis of recombination centers in (AlxGa1−x)0.5In0.5P quaternary alloys (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4946-4949 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We studied nonradiative recombination centers in undoped (AlxGa1−x)0.5In0.5Pgrown by metalorganic vapor phase epitaxy using transient capacitance spectroscopy. We found three deep energy levels, including a mid-gap level. We drew an equation to get a capture cross section for minority carriers, and obtained it using isothermal capacitance transient spectroscopy measurement. The mid-gap level had an electron capture cross section of 2 × 10−10 cm2 and a hole capture cross section of 1 × 10−15 cm2. The time constant of nonradiative recombination through the mid-gap level was found to be comparable to that of radiative recombination. We concluded that the mid-gap level is an effective nonradiative recombination center that reduces photoluminescence intensity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349041
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