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  • Springer  (22)
  • American Institute of Physics (AIP)  (12)
  • University of Chicago Press  (4)
  • 1990-1994  (24)
  • 1985-1989  (14)
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  • 1
    Digitale Medien
    Digitale Medien
    Picosecond pulse response characteristics of GaAs metal-semiconductor-metal photodetectors (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2435-2448 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We present a comprehensive theoretical and experimental analysis of the current response of GaAs metal-semiconductor-metal Schottky photodiodes exposed to 70 fs optical pulses. Theoretical simulations of the carrier transport in these structures by a self-consistent two-dimensional Monte Carlo calculation reveal the strong influence of the distance between the finger electrodes, the external voltage, the GaAs layer thickness and the excitation intensity on the response time and the corresponding frequency bandwidth of these photodetectors. For many experimental conditions, the model demonstrates a clear temporal separation of the electron and hole contributions to the output current due to the different mobilities of the two carrier types. For a diode with an electrode separation of 0.5 μm, an electric-field strength above 10 kV/cm and low intensity of the incident light the theory predicts a pulse rise time below 2 ps, an initial rapid decay as short as 5 ps associated with the electron sweep out and a subsequent slower tail attributed to the hole current. For weaker electric fields and/or higher light intensities a significant slowing down of the detector speed is predicted because of effective screening of the electric field by the photoexcited carriers. Heterostructure layer-based devices are shown to provide superior performance compared to diodes manufactured on bulk substrates. Experimental data obtained by photoconductive or electro-optic sampling on diodes with electrode separation between 0.5 and 1.2 μm agree fairly well with the theoretical predictions.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.349395
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  • 2
    Digitale Medien
    Digitale Medien
    Laser induced thermal desorption: A time resolved study (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 96 (1992), S. 4040-4043 
    Details
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: Real time monitoring of laser induced thermal desorption of NH3 from Re(0001) at ns time scale was performed utilizing optical SHG. Coverage dependent desorption kinetic parameters determined under equilibrium conditions were found to correctly describe the 8 orders of magnitude faster desorption rates. The role of strong repulsive interactions is discussed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.461857
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  • 3
    Digitale Medien
    Digitale Medien
    Subpicosecond characterization of carrier transport in GaAs-metal-semiconductor-metal photodiodes (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1410-1412 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The temporal evolution of the photocurrent in interdigitated GaAs metal-semiconductor- metal Schottky photodiodes is directly measured in the time domain by photoconductive and electro-optic sampling with subpicosecond resolution. Excellent agreement is found between experiment and theoretical data obtained by two-dimensional self-consistent Monte Carlo calculations.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.105208
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  • 4
    Digitale Medien
    Digitale Medien
    Transit time limited response of GaAs metal-semiconductor-metal photodiodes (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2503-2505 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The response of GaAs metal-semiconductor-metal (MSM) photodiodes at low temperatures has been investigated in the time domain by photoconductive sampling. The dependence of the response time on temperature for T(approximately-greater-than)50 K can be described by phonon mediated intervalley and intravalley scattering. The pulse width drops from 10.8 ps at 300 K to 5.6 ps at 70 K and then grows rapidly with decreasing temperature below 50 K. These results demonstrate that the response is limited by the electron/hole transport in the semiconductor rather than by external capacitances or inductances.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.104857
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  • 5
    Digitale Medien
    Digitale Medien
    Subpicosecond carrier lifetimes in radiation-damaged GaAs (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1881-1883 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We investigate the dependence of carrier lifetimes in radiation-damaged, GaAs on proton implantation dose by means of time-resolved reflectivity and photoconductivity experiments with subpicosecond resolution. The carrier lifetimes decrease with increasing implantation dose at low implantation levels whereas beyond the "amorphization dose'' a saturation at 0.5 ps can be observed due to a saturation of the defect density.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.105061
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  • 6
    Digitale Medien
    Digitale Medien
    Wavelength selective infrared microscopy: A nondestructive and quick method for the investigation of buried structures in optoelectronic devices (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3401-3406 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In this paper we present an optical method to control the geometry of buried layers in optoelectronic heterostructures. The technique uses an optical microscope equipped for infrared applications and relies on the fact that the different layers of the multilayer structure have different band gaps. Accordingly transmission/absorption, reflectance, and photoluminescence of the inidividual layers exhibit their characteristic near-band-gap spectral variations at different wavelengths. By appropriate selection of the wavelength range used for image formation, any layer of interest can be made visible. As an example we investigated a mushroom-type InGaAsP/InP 1500-nm laser structure with subsequent mass transport. Both technological steps, the formation of the mushroom by underetching, and the regrowth by mass transport represent critical processes in the fabrication of these index-guided lasers. Our results show clearly that the successful accomplishment of the process can be controlled by images of the selected buried layer. Contrast and resolution of the pictures are sufficient to show any irregularity in etching or regrowth. The main advantage of the method is that it offers the possibility of investigating whole wafers without sample preparation and in a nondestructive way, which is in marked contrast to observation with a scanning electron microscope, where only profiles along cleaved facets can be inspected.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.337637
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  • 7
    Digitale Medien
    Digitale Medien
    Thermal degradation effects in InP (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 4677-4682 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Thermal degradation in InP has been regarded to be equivalent to surface deformation. By means of luminescence microscopy we discovered a much larger scale of degradation effects. Crystallographic defects of several geometrical characteristics have been observed although the surfaces seemed to be perfectly smooth. The standard methods of protection against degradation used in liquid phase epitaxy turned out to be unreliable concerning the invisible degradation effects. We propose a model which describes the evolution of degradation starting with invisible crystallographic defects. An extreme loss of phosphorus concentrated around dislocations causes local melting representing the final and visible stage of degradation. We suppose that P vacancies which have never been noticed before are responsible for inhomogeneities affecting processing and the reliability of optoelectronic devices.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.340122
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  • 8
    Digitale Medien
    Digitale Medien
    Bandwidth enhanced metal-semiconductor-metal photodetectors based on backgated ip structures (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2223-2225 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report on theoretical and experimental results on a novel metal-semiconductor-metal (MSM) photodetector with a backgate provided by a p-doped layer. The backgate allows extremely short sweep-out times for the holes, due to strong electric fields normal to the surface. Thus, long tails due to slow moving holes and screening of the external drift fields by hole space charge accumulation at high optical power, which lead to a degradation of the time response of conventional MSM photodetectors, are avoided. The high frequency performance measured up to 8 GHz in the time and frequency domain showed a significant reduction of the bandwidth limiting hole tail compared to standard MSM photodetectors. © 1994 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.112767
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  • 9
    Digitale Medien
    Digitale Medien
    Time-resolved photocurrent response of metal-semiconductor-metal photodetectors to double-pulse excitation (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2780-2782 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The photocurrent response of a GaAs metal-semiconductor-metal (MSM) photodetector was measured after excitation with two femtosecond pulses having a variable delay Δt of 0 ps≤Δt≤100 ps. At low excitation densities the influence of the first pulse on the pulse shape of the second is negligible for Δt≥20 ps. This corresponds to a resolvable pulse train of 50 GHz repetition rate for the detectors used in our experiments. The influence of space charge effects at higher excitation density and/or lower bias could be shown.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.110332
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  • 10
    Digitale Medien
    Digitale Medien
    Ultrafast metal-semiconductor-metal photodiodes fabricated on low-temperature GaAs (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 627-629 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: GaAs metal-semiconductor-metal photodiodes fabricated on GaAs grown at low substrate temperatures (200 °C) have been investigated in the time domain by electro-optic sampling. It could be shown that these diodes have a faster response, a considerably reduced long time tail, and can be used at larger bias than comparable diodes produced on GaAs grown at 700 °C. Temperature-dependent measurements show that the tail can be described by hopping conductivity and disappears below 50 K.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.106574
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