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  • 1995-1999  (80)
  • 1990-1994  (51)
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  • 1
    Call number: 21/STR 95/24
    In: Scientific technical report
    Type of Medium: GFZ publications
    Pages: 16, [20] Bl.
    Series Statement: Scientific technical report / Geoforschungszentrum Potsdam 95,24
    Classification:
    Photogrammetry, Remote Sensing
    Location: Reading room
    Branch Library: GFZ Library
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  • 2
    Call number: 21/STR 95/25
    In: Scientific technical report
    Type of Medium: GFZ publications
    Pages: 118 S.
    Series Statement: Scientific technical report / Geoforschungszentrum Potsdam 95,25
    Classification:
    Photogrammetry, Remote Sensing
    Location: Reading room
    Branch Library: GFZ Library
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  • 3
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 116 (1994), S. 2235-2242 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Machine vision and applications 11 (1999), S. 145-159 
    ISSN: 1432-1769
    Keywords: Key words:Augmented reality – Enriched image sequence – Viewpoint determination – Tracking
    Source: Springer Online Journal Archives 1860-2000
    Topics: Computer Science
    Notes: Abstract. Mixing video and computer-generated images is a new and promising area of research for enhancing reality. It can be used in all the situations when a complete simulation would not be easy to implement. Past work on the subject has relied for a large part on human intervention at key moments of the composition. In this paper, we show that if enough geometric information about the environment is available, then efficient tools developed in the computer vision literature can be used to build a highly automated augmented reality loop. We focus on outdoor urban environments and present an application for the visual assessment of a new lighting project of the bridges of Paris. We present a fully augmented 300-image sequence of a specific bridge, the Pont Neuf. Emphasis is put on the robust calculation of the camera position. We also detail the techniques used for matching 2D and 3D primitives and for tracking features over the sequence. Our system overcomes two major difficulties. First, it is capable of handling poor-quality images, resulting from the fact that images were shot at night since the goal was to simulate a new lighting system. Second, it can deal with important changes in viewpoint position and in appearance along the sequence. Throughout the paper, many results are shown to illustrate the different steps and difficulties encountered.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    Fresenius' journal of analytical chemistry 358 (1997), S. 127-130 
    ISSN: 1432-1130
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract  The effect of silicon and titanium on the spallation resistance of alumina scales formed on NiCrAlY-type alloys has been investigated using model alloys with different additions of Si or Ti. For this purpose cyclic oxidation experiments were carried out at temperatures between 950 and 1100 °C. For evaluation of the growth and temperature induced stresses in the oxide scales selected samples were analysed by X-ray stress evaluation (XSE) at ambient temperature after various oxidation treatments. The compressive strains in the scales were found to increase with increasing oxidation time, tending to become constant after longer oxidation times. The strains reduced remarkably, when scale damage, such as cracking, started. The developed strains in the oxide scales appeared to be affected by the microstructure of the alloy and the phase distribution in the subsurface depletion layer beneath the oxide. This distribution is affected by the presence of Si and Ti. Apart from the X-ray method, laser Raman spectroscopy (LRS) was calibrated for strain measurement by XSE results aiming at applying this method for stress analysis at higher temperatures.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 777 (1996), S. 0 
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Notes: Interleukin-6 (IL-6) immunoreactivity has previously been shown in plaques in Alzheimer's disease (AD), and elevated IL-6 concentrations have been measured biochemically in brains of AD patients. In this report, we present data on the appearance of IL-6 immunoreactivity in AD plaques according to the stage of plaque formation. Diffuse plaques are found in the early stages of plaque formation, whereas primitive and classic plaques are thought to represent later stages of plaque pathology. We classified plaques using the Bielschowsky silver stain method in serial sections of paraffin-embedded cortices of clinically diagnosed and histopathologically confirmed AD patients and patients with no clinical history of dementia. In the brains of nondemented and demented persons, we found plaques using the silver staining method or immunohistochemistry with antibodies against the amyloid precursor protein. In the nondemented group, diffuse plaques were the predominant plaque type, whereas primitive plaques formed the larger proportion of lesions in the group of AD brains.IL-6 was only detectable in plaques of demented patients. In AD cases, IL-6 was found in a significantly higher ratio in diffuse plaques as would have been expected from a random distribution of IL-6 in all plaque types.We conclude that the presence of IL-6 immunoreactivity correlates with clinically detectable dementia. In addition to the ubiquitous presence of amyloid in nondemented and demented brains, an IL-6-related immunological mechanism may be involved both in the transformation from diffuse to primitive plaques in AD and in the development of dementia.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2990-2993 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The two possible causes of depth inhomogeneities of the microstructure of porous silicon are changes in the HF concentration with depth and a varying chemical etching rate of the porous silicon layer. During anodization chemical etching will become important for microporous silicon — e.g. p-porous silicon — due to the large internal surface area, especially at long etching times. On the other hand, a considerable decrease of the HF concentration will occur during etching with high current densities to produce p+-porous silicon with high porosities. We have investigated the depth inhomogeneity of porous silicon layers by spectroscopic ellipsometry, Raman spectroscopy and photoluminescence measurements. From a line shape analysis of the Raman signal a size distribution of nanocrystals is deduced. For p-porous silicon smaller nanocrystals are found near the surface of the layer; for p+-porous silicon etched with high current densities smaller nanocrystals are found near the porous silicon/substrate interface. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 739-743 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ohmic contacts produced by high-energy pulsed laser beam alloying Au/Te/Au/n-GaAs are investigated by micro Raman spectroscopy. The results are compared to those from furnace annealed ohmic contacts. For the furnace as well as for the laser annealed ohmic contacts, no evidence for a doping of the contact region is found in the Raman spectra. The presence of a highly disordered GaAs surface layer is observed for both types of contacts. In addition, after furnace processing a Ga2Te3 layer is formed. These results are consistent with earlier Mössbauer studies. For the laser alloyed samples the results strengthen the role of a defective/disordered interface structure where conduction might occur by a resonant tunneling process involving localized gap states.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 186-188 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline silicon (poly) gate metal-oxide-semiconductor (MOS) transistors were electrically stressed by constant-current tunneling. After the stress the devices were thermally annealed for variable times in the temperature range between 800 and 950 °C, and a second tunneling stress was performed. Capacitance-voltage (C-V) curve broadening and a charge pumping (CP) technique were used to detect interface state generation. It was found that the stress generated interface states are totally annealed by the thermal treatment. On the other hand, generation rates and saturation values, due to the second stress after annealing, exceed those of the fresh devices. Analysis of the generation process indicates that two types of interface states are generated: one, similar in its generation rate and saturation value to that of a fresh device, and another one, which is characterized by a higher generation rate and saturation value, is attributed to a new type of latent site. The density of this new type of latent interface states site decays exponentially with the annealing time. The annealing rate follows a temperature-dependent Arrhenius function. The anneal of this new type of interface state is characterized by an activation energy of 3.47 eV.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 598-600 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline silicon gate metal-oxide-semiconductor transistors, fabricated with polycrystalline silicon leads, were repeatedly electrically stressed by constant-current Fowler–Nordheim tunneling cycles. After every stress cycle the devices were annealed for various time intervals at 950 °C. Capacitance-voltage measurements were used to detect stress-related interface-state generation rates and saturation values. It was found that although the stress-generated interface states are totally annealed by the thermal treatment, their generation rates and saturation values after anneal are a strong function of the anneal time, significantly exceeding the values of the fresh devices and inversely dependent on the anneal time. From the results it is concluded that a new type of latent interface-state sites is generated by the combination of tunneling stress and high-temperature annealing.
    Type of Medium: Electronic Resource
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