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  • 1995-1999  (111)
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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    The journal of membrane biology 147 (1995), S. 185-193 
    ISSN: 1432-1424
    Keywords: ATP ; Cl− conductances ; Epididymis ; cAMP ; Ca2+ ; Calmodulin
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Chemistry and Pharmacology
    Notes: Abstract Activation of Ca2+ and cAMP-dependent Cl− conductances by extracellular ATP was studied using the whole-cell patch clamp technique. Immediately after addition of extracellular ATP (10 μm), activation of wholecell Cl− current exhibiting delayed inactivation and activation kinetics at hyperpolarizing and depolarizing voltages, respectively, was observed. After prolonged activation, the kinetic characteristics of the ATP-induced Cl− current became time- and voltage-independent. When applied to the later phase of the ATP-activated whole-cell current, the disulfonic acid stilbene DIDS (200 μm) could only inhibit 64% of the current while diphenylamine-dicarboxylic acid (DPC, 1 mm) completely inhibited it. Inclusion of a peptide inhibitor for protein kinase A (PKI, 10 nm) in the pipette solution blocked ATP-induced time- and voltage-independent current activation but did not affect the delayed activating and inactivating current activation but did not affect the delayed activating and inactivating current which could be totally blocked by DIDS. Anion selectivity sequence was determined in the presence of either PKI or DIDS and found to be significantly different. Increased pipette EGTA (10 mm) or treatment of the cells with trifluoperazine (40 μm), an inhibitor of calmodulin, suppressed both types of ATP-induced Cl− currents. No current activation by ATP was observed when cells were dialyzed with the IP3 receptor blocker, heparin (10 ng/ml). These results suggest that extracellular ATP activates IP3-linked Ca2+-dependent regulatory pathway, which in turn activates cAMP-dependent pathway, leading to activation of both Ca2+ and cAMP-dependent Cl− conductances in epididymal cells.
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  • 2
    ISSN: 1432-0789
    Keywords: Key wordsOrganic sulfur ; Mineralization ; Sulfur exhaustion ; Sulfur fraction ; Upland soils
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Geosciences , Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Abstract  An open incubation technique was used to measure S mineralization in a range of upland soils of north China. Six mineralization patterns were examined, and a soil S-exhaustion experiment with ryegrass (Lolium multiflorum L.) was conducted to investigate the availability of various organic S pools to plants. For all of the 12 soils tested, the release of S as SO4 2– was curvilinear with time, and during a 28-week incubation at 30  °C the amount of S mineralized ranged from 14.0 mg S kg–1 soil to 37.4 mg S kg–1 soil. A first-order model and Gompertz model appeared to best describe S mineralization. Examination of the soils after incubation revealed the bulk of the mineralized S was mainly derived from the C-bonded S pool, while the majority of mineralized S under soil S exhaustion by ryegrass was derived from the HI-reducible S pool.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 326-330 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High Tc superconducting materials with nominal compositions of Tl1-xBix(Sr, Ba)2Ca2Cu3O9 (0≤x≤0.5) have been investigated using x-ray powder diffractometry and electron microscopy. It was found that Tl and Bi cations were in an ordered arrangement in the (Tl, Bi)–O atomic layer. Although the proposed supercell is 4a×4b×4c derived from the basic unit cell of the undoped TlBa2Ca2Cu3O9 (Tl-1223), the basic two-dimensional superlattice in the (Tl, Bi)–O layer is 2a×4b or 4a×2b with Bi cations at the center and the corner of the rectangle, giving an ideal and preferred composition with the Tl:Bi ratio of 3:1. Accordingly, the maximum Bi doping for Tl in the solid solution is 25%. The proposed model of the superstructure was supported by computer simulation of electron diffraction patterns. The mechanism of formation of the superstructure is discussed. © 1996 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 683-685 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a type of strained semiconductor quantum-well structure that exhibits bias-independent heavy- and light-hole degeneracy. This effect is achieved by inserting thin layers of highly strained material in an unstrained quantum well. By adjusting the thickness and the position of the highly tensile strained layers, the quantum confined Stark effect for the heavy and light holes can be engineered separately to control the bias dependent polarization properties. Experimental results on such a structure agree well with the theory. These unique bias-dependent polarization properties have important applications in optoelectronic devices when specific polarization properties are required. © 1998 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3297-3299 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have successfully grown carbon nanotubes on cobalt-implanted silicon with various doses. The morphology of such tubes has been examined by scanning electron microscopy, transmission electron microscopy, and Raman scattering. On contrary to the commonly used transition-metal nanoparticle catalysts, nanometer-sized CoSi2 precipitates produced in the as-implanted substrates are believed to act as nucleation centers for the formation of carbon nanotubes. © 1998 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Plant breeding 118 (1999), S. 0 
    ISSN: 1439-0523
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: The paper summarizes the selection and improvement of pollen fertility restoration in cytoplasmic male-sterile lines during the past 30 years at Jiangsu Province, China. A fertility restorer line (R16) with a good history of strong and stable restoring ability to different sterile lines was bred by accumulating fertility-restoring genes from derivatives of T797 and other restorer lines such as Primepi. A series of well-performing restorer lines with similar fertility-restoring ability has been bred by improving agronomic characters, disease-resistance and kernel size of R16. The restoring ability of these restorer lines using different male-sterile lines demonstrates that fertility restoration is no longer an obstacle for commercial utilization of hybrid wheat with the Triticum timopheeviii cytoplasmic male-sterile system. Line 2114 is a restorer with a single restoring gene transferred from Aegilops umbellulata. Its restoring ability, using both difficult and easily restored lines was 82% and 93.3% respectively. Maiyou No. 5, one hybrid variety, showed 13.2% yield advantage over the control variety in the Jiangsu Province registration test in 1997-1998 and was superior to nine other varieties adapted to the Jiangsu Province.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 3659-3661 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Doping techniques are of great importance in developing new materials and devices. We present here a novel approach for doping impurity in thin film by using dual-beam pulsed-laser deposition technique that allows in situ controlling doping under a wide range of conditions. We demonstrated doping Ag in situ in YBa2Cu3O7−δ thin films and for the first time observed long bar-like Ag structures with a length up to 150 μm in the as-deposited films, which may have important application in the fabrication of superconductor-normal metal-superconductor Josephson junctions. © 1998 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3000-3002 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial LaNiO3 (LNO) thin films were grown on (001) SrTiO3 substrates by laser molecular-beam epitaxy. The growth process of the LNO films was monitored by in situ reflection high-energy electron diffraction (RHEED). Clear RHEED patterns and the intensity oscillation of RHEED were observed during the epitaxial growth process. The morphology of the films was studied by atomic force microscopy. The results show that the films grown by this method have a nanoscale smooth surface with the root-mean-square surface roughness smaller than 7 nm on an area of 1×1 μm2. X-ray diffraction patterns indicate that the crystalline LNO films exhibited preferred (00l) orientation. The resistivity of the thin film is 0.28 mΩ cm at 278 K and 0.06 mΩ cm at 80 K, respectively. © 1999 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1430-1432 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoreflectance is used to study the effect of H2S plasma passivation on the GaAs surface. GaAs samples are treated with a H2S plasma in an electron cyclotron resonance chemical vapor deposition system and in-situ encapsulated with a SiNx film. The surface Fermi level moves towards the conduction band after H2S plasma passivation and a surface state density of 6×1010 cm−2 is achieved under optimal passivation conditions. The surface state density is highly dependent on the sample temperature during passivation. The movement of the surface Fermi level is due to the reduction of the surface state density and not due to a shift of midgap surface states, suggesting that S–Ga bonds play the major role in H2S plasma passivated GaAs surfaces. This work demonstrates the need to measure both the surface Fermi level and the density of surface states. © 1999 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1654-1656 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-organized In0.4Ga0.6As/GaAs quantum-dot single-mode ridge waveguide lasers with intracavity absorber were grown by molecular beam epitaxy. Bistability in the light–current characteristics of 3 μm single-mode edge-emitting laser was obtained by controlling the intracavity absorber voltage. Self-pulsation was also observed with a center frequency of 1.6 GHz and linewidth 〈10 MHz. © 1999 American Institute of Physics.
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