Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
67 (1995), S. 2699-2701
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Both the hexagonal and cubic GaN phases were synthesized in GaAs (001) by 50 keV N ion implantation at 380 °C and subsequent furnace annealing at 850–950 °C for 10 min–2 h. For a fluence of 1.5×1017 cm−2, transmission electron microscopy revealed that cubic GaN epitaxially crystallizes as precipitates in the GaAs matrix. A cubic-to-hexagonal GaN phase transition was observed for extended thermal anneals. By increasing the N fluence to 3×1017 cm−2, a continuous buried layer of randomly oriented hexagonal-GaN nanocrystals was produced. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.114297
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