ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract Conditions are investigated for the injection of arsenic into gallium nitride layers grown by metal-organic vapor-phase epitaxy. It is shown that the deposition of GaAs on a GaN surface relieves stresses in the GaN layer. The high-temperature overgrowth of a thin GaAs layer by a GaN layer causes As atoms to diffuse into the GaN, produces a thick, homogeneously doped GaN:As region, and creates a bright band in the photoluminescence spectrum with a maximum at ∼2.5 eV.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1187770
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