Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
68 (1996), S. 2861-2863
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We study carrier traps in a single electron transistor fabricated from a GaAs/AlxGa1−xAs heterostructure. In the heterointerface, there are many kinds of defects, which induce various trap levels in the band gap of AlxGa1−xAs or GaAs. The current through the transistor switches between two states because of trapping and detrapping of a single electron. The gate voltage dependencies of the switching indicate how the traps are spatially distributed. The possibility of the existence of a trap with multilevels is also discussed. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.116349
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