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  • 1995-1999  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Journal of applied electrochemistry 27 (1997), S. 335-344 
    ISSN: 1572-8838
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Electrical Engineering, Measurement and Control Technology
    Notes: Abstract The formation and reduction of passive layers on copper in weakly alkaline solutions saturated with N2 and O2 were studied. Voltammetric and ellipsometric techniques were employed to examine the structural characteristics of the layers formed in the −0.32 to 0.75 V vs RHE potential region. Optical measurements at open circuit potentials (Eoc) were also made to simulate operational conditions. The passive layer consists of a duplex structure: an outer hydrated copper oxide film and an inner dehydrated film. This inner layer is composed of Cu2O with a surface excess of Cu(ii) ions. The growth rate of the oxide layers at controlled potentials is higher in O2 saturated solution. The corrosion resistance of copper depends on the presence of O2 in the electrolyte, on the stirring rate and on the Eoc value.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Journal of applied electrochemistry 27 (1997), S. 396-403 
    ISSN: 1572-8838
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Electrical Engineering, Measurement and Control Technology
    Notes: Abstract The influence of O3 on the passive behaviour of copper was analysed in the potential region −0.32 to 0.70V vs RHE in borax solutions (pH9.2) through voltammetric techniques and ellipsometry. Oxide formation can be explained as a sequence of Cu2O growth, Cu(ii) chemisorption, and dissolution precipitation steps similar to those corresponding to copper electrodes in deaerated solutions. The role of Cu(ii) chemisorption is discussed in this paper. The progressive accumulation of hydrated layers hinders the reaction between O3 and the metal. O2 and O3 promote growth and dissolution processes (both at open circuit and in controlled potential experiments) but O3 has a stronger effect.
    Type of Medium: Electronic Resource
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