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  • 1
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    AIDS vaccine development (1998)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 1998-05-23
    Description: 〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Agosto, M -- Allan, J -- Benson, C -- Berger, E A -- Blumenthal, R -- Burton, D -- Clements, J -- Coffin, J -- Connor, R -- Cullen, B -- Desrosiers, R -- Dimitrov, D -- Doms, R -- Emerman, M -- Feinberg, M -- Fultz, P -- Gerard, C -- Gonsalves, G -- Haase, A -- Haigwood, N -- Hirsch, V -- Ho, D -- Hoxie, J A -- Hu, S L -- Zingale, D -- New York, N.Y. -- Science. 1998 May 8;280(5365):803, 804-5.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/9599148" target="_blank"〉PubMed〈/a〉
    Keywords: *AIDS Vaccines/immunology ; Acquired Immunodeficiency Syndrome/prevention & control ; *Clinical Trials as Topic ; HIV Envelope Protein gp120/immunology ; HIV-1/immunology ; Humans ; National Institutes of Health (U.S.) ; United States
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
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  • 2
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    An Emplacement Model for Allochthonous Salt Sheets with Implications Toward Subsalt Exploration: ABSTRACT (1996)
    American Association of Petroleum Geologists
    Details
    Publication Date: 1996-01-01
    Print ISSN: 0149-1423
    Electronic ISSN: 1943-2674
    Topics: Geosciences
    Published by American Association of Petroleum Geologists
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  • 3
    Electronic Resource
    Electronic Resource
    Rabbit RAG-2 UTRs: characterization of an unusually large 3′ untranslated region (1997)
    Springer
    Immunogenetics 46 (1997), S. 267-275 
    Details
    ISSN: 1432-1211
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Abstract  We previously characterized the rabbit recombination activating gene-2 (RAG-2) coding region and a portion of the cDNA. Rabbit RAG-2 mRNA, however, was shown to be approximately twice as large as the predominant form expressed in other vertebrate species, suggesting that it contained additional coding and/or untranslated regions (UTR). In this report, we map and sequence the complete 5′ and 3′ UTRs of the rabbit RAG-2 transcript and identify and sequence the genomic regions from which they are transcribed. The data show that, with the exception of a 300 nucleotide 5′ UTR, almost all of the additional sequence belongs to the 3′ UTR and that the 3′ UTR sequence is transcribed from a single large exon that encodes most of the coding region and all of the 3′ UTR. The 3′ UTR contains four poly A signal sites, the last of which is closely followed by a GU-rich region. The rabbit 3′ UTR has a high level of identity with the homologous region downstream of the human RAG-2 gene but not with the mouse RAG-2 gene. The region of identity extends several hundred nucleotides beyond the transcribed region and terminates in a series of dinucleotide (TG) repeats. The data are discussed in terms of RAG gene and 3′ UTR function, regulation, and evolution.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s002510050272
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  • 4
    Electronic Resource
    Electronic Resource
    Energy state of Nd3+ doped in barium sodium niobate crystals (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 2560-2562 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nd-doped barium sodium niobate (Ba2Na)1−xNdxNb5O15 (BNN:Nd), with x=0.025 and a Curie temperature of 537±2 °C, crystallizes with a filled tungsten bronze-type structure in the tetragonal system. The lattice constants are a=b=1.2446(1) and c=0.3991(1) nm at room temperature. There are two formulas per unit cell. The five typical deep energy levels, formed by the Nd3+ ions doped in the A1 and A2 sites, are 2.36, 2.12, 1.68, 1.55, and 1.43 eV. Investigating the green and yellow second-harmonic generation shows that the BNN:Nd crystal can be expected as a useful material for the green, especially for the yellow laser radiation at room temperature. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367016
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  • 5
    Electronic Resource
    Electronic Resource
    Semiconducting Ge–Si–Fe alloy grown on Si(100) substrate by reactive deposition epitaxy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1912-1914 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, we report a semiconducting Ge–Si–Fe alloy thin film grown on Si(100) by reactive deposition epitaxy using high vacuum evaporation technique. This work is based on the idea that the band structure of β-FeSi2 will be changed with part of the Si atoms in the lattice replaced by Ge atoms. An iron film was first deposited on a SiGe/Si(100) structure, then the alloy was formed during an annealing process. Auger electron spectroscopy and x-ray diffraction results indicate that the new alloy film can be regarded as a distorted β-FeSi2 thin film with the participation of Ge. The direct band gap of the Ge–Si–Fe alloy is determined to be 0.83 eV by optical transmission measurements, which indicate a redshift of the band gap with regard to that of β-FeSi2 (Eg=0.87 eV) thin films. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117619
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  • 6
    Electronic Resource
    Electronic Resource
    Realization of silicon quantum wires by selective chemical etching and thermal oxidation (1996)
    Springer
    Applied physics 63 (1996), S. 371-375 
    Details
    ISSN: 1432-0630
    Keywords: 85.42 ; 81.15 ; 81.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Ultra-fine silicon quantum wires with SiO2 boundaries were successfully fabricated by combining SiGe/Si heteroepitaxy, selective chemical etching and subsequent thermal oxidation. The results are observed by scanning electron microscopy. The present method provides a very controllable way to fabricate ultra-fine silicon quantum wires, which is fully compatible with silicon microelectronic technology. As one of the key processes of controlling the lateral dimensions of silicon quantum wires, the wet oxidation of silicon wires has been investigated, self-limiting wet oxidation phenomenon in silicon wires is observed. The characteristic of the oxidation retardation of silicon wires is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01567328
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  • 7
    Electronic Resource
    Electronic Resource
    Realization of silicon quantum wires by selective chemical etching and thermal oxidation (1996)
    Springer
    Applied physics 63 (1996), S. 371-375 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 85.42; 81.15; 81.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract  Ultra-fine silicon quantum wires with SiO2 boundaries were successfully fabricated by combining SiGe/Si heteroepitaxy, selective chemical etching and subsequent thermal oxidation. The results are observed by scanning electron microscopy. The present method provides a very controllable way to fabricate ultra-fine silicon quantum wires, which is fully compatible with silicon microelectronic technology. As one of the key processes of controlling the lateral dimensions of silicon quantum wires, the wet oxidation of silicon wires has been investigated, self-limiting wet oxidation phenomenon in silicon wires is observed. The characteristic of the oxidation retardation of silicon wires is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050400
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  • 8
    Electronic Resource
    Electronic Resource
    Iron-doped semi-insulating InP grown by chloride VPE with nitrogen mixed with hydrogen as carrier gas (1996)
    Springer
    Optical and quantum electronics 28 (1996), S. 519-525 
    Details
    ISSN: 1572-817X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Iron-doped semi-insulating InP has been grown by chloride vapour-phase epitaxy (VPE) using nitrogen mixed with hydrogen as carrier. Reducing hydrogen partial pressure by the introduction of nitrogen greatly improves the transport of FeCl2. The influence of hydrogen partial pressure on the Fe transport, and therefore on the Fe incorporation, has been studied theoretically and experimentally. With a relatively slow growth rate, InP film with a high Fe concentration is easily obtained. Quantum-well laser diodes with semi-insulating InP(Fe) stripe-confinement have been fabricated successfully.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00943620
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  • 9
    Electronic Resource
    Electronic Resource
    Microstructural features of dissimilar MMC/AISI 304 stainless steel friction joints (1996)
    Springer
    Journal of materials science 31 (1996), S. 3667-3674 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The microstructure and mechanical properties of dissimilar friction joints between aluminium-based MMC and AISI 304 stainless steel base materials were investigated. The microstructural features which occur in the stainless steel substrate comprise deformation twinning, formation of a fine-grained dislocation substructure in austenite, and plastic deformation. The stainless steel substrate was plastically deformed in the region close to the mid-radius of the dissimilar joint. In a similar manner, 5–10 μm thick transition layers, comprising regions of locally plasticized MMC-base material, were formed close to the mid-radius location in dissimilar joints. The interlayer formed at the dissimilar joint interface comprised a mixture of oxide (Fe(Al,Cr)2O4 or FeO(Al,Cr)2O3) and FeAl3 intermetallic phases. The notch tensile strength of dissimilar MMC/AISI 304 stainless steel joints increased when the rotational speed increased from 500 r.p.m. to 1000 r.p.m., and at higher rotation speeds, there was no effect on notch tensile strength properties.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00352777
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  • 10
    Electronic Resource
    Electronic Resource
    Determination of the Concentrations of Binary Mixtures of Glycerine and Water by a Transient Method (1998)
    Springer
    Journal of thermal analysis and calorimetry 53 (1998), S. 855-859 
    Details
    ISSN: 1572-8943
    Keywords: binary mixture ; concentration ; glycerine-water ; on-line analysis ; thermal analysis ; thermal conductivity
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract The conductivities of binary mixtures of glycerine and water were measured at 20°C by means of a transient method. The equation describing the correlation between concentration and thermal conductivity was determined. The equation can be used for determining concentrations in mixtures. The results show that (1) the error in the determination of the molar concentration of water in mixtures is less than 1%, (2) the time of measurement is 1 s, (3) this method can be used for on-line analysis in production control.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1010138317975
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