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  • 1995-1999  (5)
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  • 1
    Electronic Resource
    Electronic Resource
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 82 (1999), S. 0 
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Calculations based on a simple modified Wiener's model for thermal conductivity of a composite material predict that the thermal conductivity of ß-Si3N4 decreases quickly as the grain-boundary film thickness increases within a range of a few tenths of a nanometer and also that it initially increases steeply with increased grain size, then reaches almost constant values. Because of the faceted nature of the ß-Si3N4 crystal, the “average” grain-boundary film thickness is much greater than that in equilibrium. The present study demonstrates both theoretically and experimentally that grain growth alone cannot improve the thermal conductivity of ß-Si3N4.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 82 (1999), S. 0 
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: ß-Si3N4 crystals were obtained through the heat treatment of alpha-Si3N4 powder with additives, Y2O3:SiO2= 1:2 and 2:1, and subsequent acid treatments that removed the secondary phases. The lattice oxygen contents of these crystals were determined by the hot-gas extraction method to be 0.258 ± 0.006 and 0.158 ± 0.003 wt% for the additive compositions of Y2O3:SiO2= 1:2 and 2:1, respectively. The oxygen dissolved in the ß-Si3N4 crystal lattice as much as in the alpha-Si3N4 crystral lattice prepared by the chemical vapor deposition process and in the AlN crystal lattice that exhibited high thermal conductivity.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 82 (1999), S. 0 
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: A powder mixture of α-Si3N4, Y2O3, and SiO2 was heat-treated in a loose powder state in the temperature range of 1750°–1900°C for 2 h; then, the mixture was acid-rinsed to remove the glassy phase. The widths and lengths of the resulting β-Si3N4 crystals were analyzed quantitatively. The width–aspect-ratio distribution of the β-Si3N4 crystals initially showed a strong negative correlation, and then the aspect ratio of crystals with small widths quickly decreased. After a stage in which aspect ratio was almost constant, regardless of the width, the width-aspect-ratio distribution evolved to show a positive correlation in the final stage. This pattern of morphology evolution of the β-Si3N4 crystals was in good agreement with that predicted by the anisotropic Ostwald ripening model.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials synthesis and processing 6 (1998), S. 161-167 
    ISSN: 1573-4870
    Keywords: Alumina ; surface ; kinetics ; diffusion ; SALK
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The kinetics of shape evolution of a completely faceted crystal/internal void by surface diffusion was modeled. Arrays of micron-sized cavities were generated in sapphire substrates with known surface orientations using microlithography and ion beam etching and converted to internal intragranular pores of nonequilibrium shape by diffusion bonding of the etched substrate to an identical-orientation unetched sapphire substrate. Pore shape evolution rates during high-temperature anneals were monitored and found to be highly sensitive to the orientation of the substrate surface. The observed evolution rates were compared with the predictions of the kinetic model using diffusivity values for alumina that span the range from the highest to the lowest diffusion constants reported in the literature. The comparison suggests that surface-attachment-limited kinetics (SALK) play a major role in surface mass transport on stable low-index planes of alumina.
    Type of Medium: Electronic Resource
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  • 5
    Publication Date: 1996-08-01
    Print ISSN: 0002-7820
    Electronic ISSN: 1551-2916
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Published by Wiley on behalf of American Ceramic Society.
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