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  • 1995-1999  (74)
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  • 1
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    Results from the Mars Pathfinder camera (1997)
    American Association for the Advancement of Science (AAAS)
    Details
    Publikationsdatum: 1997
    Beschreibung: Images of the martian surface returned by the Imager for Mars Pathfinder (IMP) show a complex surface of ridges and troughs covered by rocks that have been transported and modified by fluvial, aeolian, and impact processes. Analysis of the spectral signatures in the scene (at 440- to 1000-nanometer wavelength) reveal three types of rock and four classes of soil. Upward-looking IMP images of the predawn sky show thin, bluish clouds that probably represent water ice forming on local atmospheric haze (opacity approximately 0.5). Haze particles are about 1 micrometer in radius and the water vapor column abundance is about 10 precipitable micrometers.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Smith, P H -- Bell, J F 3rd -- Bridges, N T -- Britt, D T -- Gaddis, L -- Greeley, R -- Keller, H U -- Herkenhoff, K E -- Jaumann, R -- Johnson, J R -- Kirk, R L -- Lemmon, M -- Maki, J N -- Malin, M C -- Murchie, S L -- Oberst, J -- Parker, T J -- Reid, R J -- Sablotny, R -- Soderblom, L A -- Stoker, C -- Sullivan, R -- Thomas, N -- Tomasko, M G -- Wegryn, E -- New York, N.Y. -- Science. 1997 Dec 5;278(5344):1758-65.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Lunar and Planetary Laboratory, University of Arizona, Tucson, AZ 85721, USA. psmith@lpl.arizona.edu〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/9388170" target="_blank"〉PubMed〈/a〉
    Schlagwort(e): Atmosphere ; *Extraterrestrial Environment ; Ice ; *Mars ; Minerals ; *Water ; Wind
    Print ISSN: 0036-8075
    Digitale ISSN: 1095-9203
    Thema: Biologie , Chemie und Pharmazie , Informatik , Medizin , Allgemeine Naturwissenschaft , Physik
    Publiziert von American Association for the Advancement of Science (AAAS)
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  • 2
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    A p53-dependent mouse spindle checkpoint (1995)
    American Association for the Advancement of Science (AAAS)
    Details
    Publikationsdatum: 1995-03-03
    Beschreibung: Cell cycle checkpoints enhance genetic fidelity by causing arrest at specific stages of the cell cycle when previous events have not been completed. The tumor suppressor p53 has been implicated in a G1 checkpoint. To investigate whether p53 also participates in a mitotic checkpoint, cultured fibroblasts from p53-deficient mouse embryos were exposed to spindle inhibitors. The fibroblasts underwent multiple rounds of DNA synthesis without completing chromosome segregation, thus forming tetraploid and octaploid cells. Deficiency of p53 was also associated with the development of tetraploidy in vivo. These results suggest that murine p53 is a component of a spindle checkpoint that ensures the maintenance of diploidy.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Cross, S M -- Sanchez, C A -- Morgan, C A -- Schimke, M K -- Ramel, S -- Idzerda, R L -- Raskind, W H -- Reid, B J -- R01CA55814/CA/NCI NIH HHS/ -- New York, N.Y. -- Science. 1995 Mar 3;267(5202):1353-6.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Department of Medicine, University of Washington, Seattle 98195.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/7871434" target="_blank"〉PubMed〈/a〉
    Schlagwort(e): Animals ; Cell Cycle ; Cells, Cultured ; DNA/biosynthesis ; Demecolcine/pharmacology ; Diploidy ; Female ; Genes, p53 ; Male ; Mice ; *Mitosis ; Nocodazole/pharmacology ; Ploidies ; Spindle Apparatus/*physiology ; Tumor Suppressor Protein p53/*physiology
    Print ISSN: 0036-8075
    Digitale ISSN: 1095-9203
    Thema: Biologie , Chemie und Pharmazie , Informatik , Medizin , Allgemeine Naturwissenschaft , Physik
    Publiziert von American Association for the Advancement of Science (AAAS)
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  • 3
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    Characterization of Soils at the Coralie Archaeological Site Grand Turk, British West Indies (1998)
    Soil Science Society of America
    Details
    Publikationsdatum: 1998-01-01
    Digitale ISSN: 2163-2812
    Thema: Land- und Forstwirtschaft, Gartenbau, Fischereiwirtschaft, Hauswirtschaft
    Publiziert von Soil Science Society of America
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  • 4
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    Atlas of Ocean Sections CD-ROM (1999)
    In:  EPIC3WOCE Newsletter, 36, Institute of Oceanographic Sciences, WOCE Int. Project Office, Southampton, UK, 39 p.
    Details
    Publikationsdatum: 2019-07-16
    Repository-Name: EPIC Alfred Wegener Institut
    Materialart: Article , notRev
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  • 5
    Digitale Medien
    Digitale Medien
    Amorphous (Mo, Ta, or W)–Si–N diffusion barriers for Al metallizations (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1109-1115 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: M–Si–N and M–Si (M=Mo, Ta, or W) thin films, reactively sputtered from M5Si3 and WSi2 targets, are examined as diffusion barriers for aluminum metallizations of silicon. Methods of analysis include electrical tests of shallow-junction diodes, 4He++ backscattering spectrometry, x-ray diffraction, transmission electron microscopy, scanning electron microscopy, and secondary-ion-mass spectrometry. At the proper compositions, the M–Si–N films prevent Al overlayers from electrically degrading shallow-junction diodes after 10 min anneals above the melting point of aluminum. Secondary-ion-mass spectrometry indicates virtually no diffusivity of Al into the M–Si–N films during a 700 °C/10 h treatment. The stability can be partially attributed to a self-sealing 3-nm-thick AlN layer that grows at the M–Si–N/Al interface, as seen by transmission electron microscopy. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.360909
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  • 6
    Digitale Medien
    Digitale Medien
    Reactively sputtered Ti-Si-N films I. Physical properties (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 656-663 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Films of Ti-Si-N were synthesized by reactively sputtering TiSi2, Ti5Si3, or Ti3Si targets in an Ar/N2 gas mixture. They were characterized in terms of their composition by MeV 4He backscattering spectrometry, their atomic density by thickness measurements combined with backscattering data, their microstructure by x-ray diffraction and high-resolution transmission electron microscopy, and their electrical resistivity by four-point-probe measurements. All films have a metal–to–silicon ratio close to that of their respective targets. The as-deposited films are either entirely amorphous or contain inclusions of TiN-like nanometer-sized grains when the overall atomic composition of the films approaches the TiN phase in the ternary Ti-Si-N diagram. A correlation between the resistivity of the as-deposited films and their position in the ternary phase diagram is evident, indicating that at the atomic scale, the spatial arrangement of atoms in the amorphous phase and their bonding character can approximate those of the equilibrium phases. A mixture of nanocrystalline TiN and amorphous Si-N is proposed for some titanium- and nitrogen-rich films. The atomic density of some films exceeds 1023 at./cm3. The resistivity of the films increases with the Si and the N content. A thermal treatment in vacuum at 700 °C for 1 h decreases the resistivity of the Ti-rich films deposited from the Ti5Si3 or the Ti3Si target, but increases that of the Si-rich films deposited from the TiSi2 target when the nitrogen content exceeds about 30 at. %. The effectiveness of these films as diffusion barriers between Si and Al or Cu is reported in Part II. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.364133
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  • 7
    Digitale Medien
    Digitale Medien
    Reactively sputtered Ti-Si-N films. II. Diffusion barriers for Al and Cu metallizations on Si (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 664-671 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Ti-Si-N films synthesized by reactively sputtering a TiSi2, a Ti5Si3, or a Ti3Si target in Ar/N2 gas mixture were tested as diffusion barriers between planar (100) Si substrates and shallow n+p Si diodes, and Al or Cu overlayers. The stability of the Ti-Si-N barriers generally improves with increasing nitrogen concentration in the films, with the drawback of an increase in the film's resistivity. Ti34Si23N43 sputtered from the Ti5Si3 target is the most effective diffusion barrier among all the Ti-Si-N films studied. It works as an excellent barrier between Si and Cu. A film about 100 nm thick, with a resistivity of around 700 μΩ cm, maintains the stability of Si n+p shallow junction diodes with a 400 nm Cu overlayer up to 850 °C for 30 min vacuum annealing. When it is used between Al and Si, the highest temperature of stability achievable with a 100-nm-thick film is 550 °C. A thermal treatment at 600 °C causes a severe intermixing of the layers. The microstructure, atomic density, and electrical resistivity of these films are described in an accompanying Part I. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.364206
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  • 8
    Digitale Medien
    Digitale Medien
    Aquatic-Terrestrial Partitioning of Deep Groundwater Discharge Using Measured Helium Fluxes (1995)
    s.l. : American Chemical Society
    Environmental science & technology 29 (1995), S. 1713-1721 
    Details
    ISSN: 1520-5851
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie , Energietechnik
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1021/es00007a001
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  • 9
    Digitale Medien
    Digitale Medien
    Performance of tantalum-silicon-nitride diffusion barriers between copper and silicon dioxide (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2152-2154 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Amorphous, 10-nm-thick tantalum-silicon-nitride (TaSiN) layers were found to be effective diffusion barriers between copper and thermal silicon dioxide. The films were electrically evaluated using TaSiN/Cu/TaSiN-oxide-silicon capacitors and bias thermal stress (BTS) treatments; the capacitors were stressed at 300 °C with electric fields in excess of 1 MV/cm for up to 80 h. High frequency capacitance versus voltage characteristics were recorded at room temperature before and after BTS treatment. Based upon comparisons between these (C–V) curves, barrier failure was concluded to have not occurred. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.114750
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  • 10
    Digitale Medien
    Digitale Medien
    Chlorimuron ethyl sorption and desorption kinetics in soils and herbicide-desiccated cover crop residues (1995)
    s.l. : American Chemical Society
    Journal of agricultural and food chemistry 43 (1995), S. 2752-2757 
    Details
    ISSN: 1520-5118
    Quelle: ACS Legacy Archives
    Thema: Land- und Forstwirtschaft, Gartenbau, Fischereiwirtschaft, Hauswirtschaft , Werkstoffwissenschaften, Fertigungsverfahren, Fertigung
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1021/jf00058a038
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