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  • 1
    Electronic Resource
    Electronic Resource
    Copenhagen : International Union of Crystallography (IUCr)
    Acta crystallographica 51 (1995), S. 199-206 
    ISSN: 1399-0047
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: An alkaline serine protease, M-protease, from Bacillus sp. KSM-K16 has been crystallized. Two morphologically different crystal forms were obtained. Crystal data of form 1: space group P212121, a = 47.3, b = 62.5, c = 75.6 Å, V = 2.23 × 105 Å3, Z = 4 and Vm = 2.09 Å3 Da−1. Crystal data of form 2: space group P212121, a = 75.82 (2), b = 57.79 (2), c = 54.19 (1) Å, V = 2.29 (2) × 105 Å3, Z = 4 and Vm = 2.15 Å3 Da−1. The crystal structure of M-protease in form 2 has been solved by molecular replacement using the atomic model of subtilisin Carlsberg (SBC) which is 60% homologous with M-protease, and refined to the crystallographic R-factor of 0.189 for 7004 reflections with Fo/σ(F) 〉 3 between 7 and 2.4 Å resolution. The final model of M-protease contains 1882 protein atoms, two calcium ions and 44 water molecules. The three-dimensional structure of M-protease is essentially similar to other subtilisins of known structure. The 269 Cα positions of M-protease have an r.m.s. difference of 1.06 Å with the corresponding positions of SBC. The crystal data of form 2 are close to those of SBC, though the structure determination of form 2 made it clear that it is not isomorphous to the crystal structure of SBC. The deletions of amino acids occur at the residues 36′ and 160′–163′ compared with SBC (numerals with primes show the numbering for SBC). The deletion of the four residues (160′–163′) may significantly affect the lack of isomorphism between M-protease and SBC.
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2716-2719 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pattern dependence of the growth rate and Ge content in selective epitaxial Si1−xGex growth using reduced-pressure chemical vapor deposition has been examined for the SiH2Cl2-GeH4-H2 system. Contrary to selective epitaxial Si growth where pattern dependence diminishes at low growth temperatures, the growth rate of selectively grown Si1−xGex layers depends on the ratio of the exposed Si area to the oxide-covered area on a wafer, at temperatures as low as 600 °C. The Ge content in the layers also depends on the ratio, and the dependence is greater at higher temperatures. Adding HCl to the gas phase decreases the pattern dependence of both growth rate and Ge content. Although, in terms of the growth rate, an optimum HCl flow rate for pattern-insensitive growth exists, the Ge content in the layers is always higher for the wafer with a smaller exposed area. © 1995 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 658-661 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have developed a new gas purifier for ArF excimer lasers that can remove all the impurities from degraded ArF excimer laser gas. We found that cooled activated charcoal at temperatures below −50 °C effectively removes CF4, which is the preponderant impurity generated in ArF excimer laser gas mixtures. We also demonstrated that the new gas purifier can regenerate the ArF excimer laser gas up to its initial purity level after about 1×109 shots of operation. © 1996 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1135-1142 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reorientation behavior of nematic liquid crystal molecules induced by an electric pulsed field was investigated by means of time-resolved optical waveguide spectroscopy (TROWS) which was developed to observe transient changes in dielectric constants and to measure the thickness of a thin dielectric medium. Time evolution of the waveguide mode patterns was successfully obtained by using TROWS, which records the reflectivity as both functions of the incident angle of laser light and the time from switching-on or -off of the external electric field. The transient dielectric tensor profile in the 4′-pentyl-4-cyanobiphenyl (5CB) layer both after switching-on and -off of the electric field could be precisely determined in a three-dimensional coordinate system by using Deuling's theory which treats the orientational deformation induced by an external electric field. Theoretical analysis of TROWS data clearly indicated that half of the 5CB molecules rotate clockwise in the plane defined by the rubbing direction and the substrate normal, and the other half rotates counter-clockwise in the same plane. The counter rotation compensates the effect of birefringence observed in the direction parallel and perpendicular to the rubbing direction and the reorientation kinetics could be well described by the Ericksen–Leslie equation. Relaxation behavior from homeotropic to planar orientation could be treated as an orientation diffusion process by applying a Gaussian distribution function to the maximum tilting angle at the middle of the cell. We report the usefulness of TROWS which provided more detailed information about the dynamics of the 5CB molecules. © 1997 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1098-1100 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dependences of the Ge/Si ratio in epitaxial Si1−xGex layers grown using a SiH2Cl2–GeH4–H2 mixture by reduced-pressure chemical vapor deposition on the flow rate ratio of GeH4/SiH2Cl2 and on the total flow rate have been examined in the temperature range from 480 to 600 °C. As previously reported, the Ge/Si ratio does not increase linearly with the flow rate ratio; instead, the rate of increase decreases at high flow rate ratios. Additionally, it increases with increasing total flow rate when the ratio of GeH4/SiH2Cl2 is fixed. It is found that these flow rate dependences are well accounted for by assuming that the reaction order for SiH2Cl2 adsorption is twice as large as that for GeH4 adsorption. © 1996 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2199-2201 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a novel optical spectroscopy, time-resolved optical waveguide spectroscopy. This technique was developed in order to investigate the transient behavior of the dielectric constants of thin dielectric medium, e.g., changes of the refractive indices induced by an external trigger such as light, electric field, etc. Optical guided waves propagate in a thin dielectric medium whose optical properties, in particular film thickness and anisotropic dielectric tensor diagonals in molecular and laboratory coordinates, can be evaluated with high accuracy. We employed this technique to a nematic liquid crystal (5CB) as a thin dielectric medium, and molecular reorientation on the switching process was observed through the recording of transient waveguide patterns. © 1996 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 785 (1996), S. 0 
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Oxford [u.a.] : International Union of Crystallography (IUCr)
    Acta crystallographica 53 (1997), S. 353-355 
    ISSN: 1600-5759
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    Journal of sol gel science and technology 13 (1998), S. 587-591 
    ISSN: 1573-4846
    Keywords: functionalized silane ; ligand ; cerium ; inorganic-organic hybrid material
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract Ce3+-doped, inorganic-organic hybrid monoliths were prepared from Si(OCH3)4, CH3 Si(OCH3)3, CeCl3 and various functionalized silanes (FSs) such as amino- (APTM), glycidyloxy- (GPTM), trifluoro- (TFTM) and chloro-(CPTM) silanes at 60°C by the sol-gel process. The functional groups of silane coupling agents coordinated with Ce3+ ions in the inorganic-organic materials. Ce3+-doped materials were transparent under the preparation conditions of FS/Ce3+ ratio of 100 and 1.0 × 10−4 mol/cm3 of Ce3+ concentration. Optical properties such as absorption spectra, emission spectra and fluorescence quantum yield for the Ce3+-doped hybrid materials were strongly affected by the Ce3+ ion environment. Emission spectra were observed for the Ce3+-doped materials below 400 nm. The emission intensities of the materials prepared from TFTM, CPTM and without FS were approximately 100 times as much as those of materials prepared from APTM and GPTM. The fluorescence quantum yield was highest (11%) for the material prepared from TFTM hybrid materials.
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  • 10
    Electronic Resource
    Electronic Resource
    Oxford [u.a.] : International Union of Crystallography (IUCr)
    Acta crystallographica 51 (1995), S. 942-944 
    ISSN: 1600-5759
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
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