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  • 1995-1999  (77)
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  • 1
    facet.materialart.
    Unknown
    Making nonmagnetic semiconductors ferromagnetic (1998)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 1998-08-14
    Description: REVIEW Semiconductor devices generally take advantage of the charge of electrons, whereas magnetic materials are used for recording information involving electron spin. To make use of both charge and spin of electrons in semiconductors, a high concentration of magnetic elements can be introduced in nonmagnetic III-V semiconductors currently in use for devices. Low solubility of magnetic elements was overcome by low-temperature nonequilibrium molecular beam epitaxial growth, and ferromagnetic (Ga,Mn)As was realized. Magnetotransport measurements revealed that the magnetic transition temperature can be as high as 110 kelvin. The origin of the ferromagnetic interaction is discussed. Multilayer heterostructures including resonant tunneling diodes (RTDs) have also successfully been fabricated. The magnetic coupling between two ferromagnetic (Ga,Mn)As films separated by a nonmagnetic layer indicated the critical role of the holes in the magnetic coupling. The magnetic coupling in all semiconductor ferromagnetic/nonmagnetic layered structures, together with the possibility of spin filtering in RTDs, shows the potential of the present material system for exploring new physics and for developing new functionality toward future electronics.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Ohno -- New York, N.Y. -- Science. 1998 Aug 14;281(5379):951-5.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉The author is with the Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Sendai 980-8577, Japan. E-mail: ohno@riec.tohoku.ac. jp.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/9703503" target="_blank"〉PubMed〈/a〉
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
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  • 2
    facet.materialart.
    Unknown
    Interaction of tyrosine-based sorting signals with clathrin-associated proteins (1995)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 1995-09-29
    Description: Tyrosine-based signals within the cytoplasmic domain of integral membrane proteins mediate clathrin-dependent protein sorting in the endocytic and secretory pathways. A yeast two-hybrid system was used to identify proteins that bind to tyrosine-based signals. The medium chains (mu 1 and mu 2) of two clathrin-associated protein complexes (AP-1 and AP-2, respectively) specifically interacted with tyrosine-based signals of several integral membrane proteins. The interaction was confirmed by in vitro binding assays. Thus, it is likely that the medium chains serve as signal-binding components of the clathrin-dependent sorting machinery.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Ohno, H -- Stewart, J -- Fournier, M C -- Bosshart, H -- Rhee, I -- Miyatake, S -- Saito, T -- Gallusser, A -- Kirchhausen, T -- Bonifacino, J S -- New York, N.Y. -- Science. 1995 Sep 29;269(5232):1872-5.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Cell Biology and Metabolism Branch, National Institute of Child Health and Human Development, National Institutes of Health, Bethesda, MD 20892, USA.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/7569928" target="_blank"〉PubMed〈/a〉
    Keywords: Adaptor Proteins, Vesicular Transport ; Amino Acid Sequence ; Cell Membrane/metabolism ; Clathrin/*metabolism ; Cloning, Molecular ; Glutathione Transferase/metabolism ; Golgi Apparatus/metabolism ; Lysosomes/metabolism ; Membrane Proteins/chemistry/*metabolism ; Molecular Sequence Data ; Nerve Tissue Proteins/chemistry/*metabolism ; Phosphoproteins/chemistry/*metabolism ; Protein Sorting Signals/chemistry/*metabolism ; Recombinant Fusion Proteins/metabolism ; Saccharomyces cerevisiae/genetics/metabolism ; Transformation, Genetic ; Tyrosine/*metabolism
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
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  • 3
    Electronic Resource
    Electronic Resource
    Mn-Based III-V Diluted Magnetic (Semimagnetic) Semiconductors (1995)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 182-184 (Feb. 1995), p. 443-450 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/01/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.182-184.443.pdf
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  • 4
    Electronic Resource
    Electronic Resource
    Atomic-Scale Studies of Point Defects in Compound Semiconductors by Scannig Tunneling Microscopy (1995)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 196-201 (Nov. 1995), p. 1949-1954 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/01/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.196-201.1949.pdf
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  • 5
    Electronic Resource
    Electronic Resource
    Electrical spin injection in a ferromagnetic semiconductor heterostructure (1999)
    [s.l.] : Macmillian Magazines Ltd.
    Nature 402 (1999), S. 790-792 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Conventional electronics is based on the manipulation of electronic charge. An intriguing alternative is the field of ‘spintronics’, wherein the classical manipulation of electronic spin in semiconductor devices gives rise to the possibility of reading and writing non-volatile ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/45509
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  • 6
    Electronic Resource
    Electronic Resource
    Interlayer exchange in (Ga,Mn)As/(Al,Ga)As/(Ga,Mn)As semiconducting ferromagnet/nonmagnet/ferromagnet trilayer structures (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2122-2124 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetic properties of all-semiconductor (Ga,Mn)As/(Al,Ga)As/(Ga,Mn)As trilayer structures are studied. The interactions between the two ferromagnetic (Ga,Mn)As layers are investigated by magnetotransport measurements in a number of samples with different GaAs thickness or with different Al content in the intermediary nonmagnetic (Al,Ga)As layer. The results indicate that carriers present in the nonmagnetic layer mediate the coupling between the two ferromagnetic layers. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122398
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  • 7
    Electronic Resource
    Electronic Resource
    Spin-dependent tunneling and properties of ferromagnetic (Ga,Mn)As (invited) (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 4277-4282 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature molecular beam epitaxy allows one to dope GaAs with Mn over its solubility limit, making it possible to realize a III–V-based diluted magnetic semiconductor (Ga,Mn)As. Magnetization measurements revealed that (Ga,Mn)As is ferromagnetic at low temperatures. The ferromagnetic transition temperature Tc can be as high as 110 K for 5% Mn. Magnetotransport properties of (Ga,Mn)As were found closely related to its magnetic properties. The temperature and magnetic-field B dependence of resistivity ρ can be understood in terms of spin-dependent scattering. The p–d exchange determined from the B dependence of ρ is shown to be consistent with the exchange expected from Tc based on the Ruderman–Kittel–Kasuya–Yosida interaction. The anomalous Hall effect dominates the Hall resistance up to room temperature, allowing one to determine the magnetic properties from the magnetotransport measurements alone. Since (Ga,Mn)As can be grown pseudomorphically on GaAs, one can introduce ferromagnetism in GaAs-based heterostructures such as resonant tunneling diodes and observe spin-dependent phenomena in current–voltage characteristics. Magneto-optical properties of (Ga,Mn)As films are also presented. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370343
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  • 8
    Electronic Resource
    Electronic Resource
    Intersubband electroluminescence in InAs/GaSb/AlSb type-II cascade structures (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1409-1411 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Intersubband electroluminescence in InAs quantum wells embedded in InAs/GaSb/AlSb type-II cascade structures is reported. The observed emission energy is in good agreement with calculation based on the multiband k⋅p theory. Dominant polarization of the emitted light is perpendicular to the quantum well layers. Difference in the spectrum shape between intersubband and interband cascade transitions is also presented. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123566
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  • 9
    Electronic Resource
    Electronic Resource
    Spontaneous splitting of ferromagnetic (Ga, Mn)As valence band observed by resonant tunneling spectroscopy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 363-365 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Current–voltage characteristics of AlAs/GaAs/AlAs double barrier resonant tunneling diodes with ferromagnetic p-type (Ga, Mn)As on one side and p-type GaAs on the other have been studied. A series of resonant peaks have been observed in both polarities, i.e., injecting holes from p-type GaAs and from (Ga, Mn)As. When holes are injected from the (Ga, Mn)As side, spontaneous resonant peak splitting has been observed below the ferromagnetic transition temperature of (Ga, Mn)As without magnetic field. The temperature dependence of the splitting is explained by the the spontaneous spin splitting in the valence band of ferromagnetic (Ga, Mn)As. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121835
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  • 10
    Electronic Resource
    Electronic Resource
    Direct observation of precipitates and self-organized nanostructures in molecular-beam epitaxy grown heavily doped GaAs:Si (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3123-3125 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a cross-sectional scanning tunneling microscopy investigation of heavily Si doped [001]-oriented GaAs grown by molecular-beam epitaxy. At a very high doping level (6×1019 cm−3), Si-doping induced precipitates are directly observed in XSTM images of the as-grown epitaxial layers. Most of the precipitates are found to have a characteristic oval shape with the long axis (∼80 A(ring)) along the growth direction. In contrast to the low diffusivity of randomly distributed Si dopants in the moderate doping regime, these precipitates are found to be highly mobile and spontaneously form "nanowires'' during crystal growth. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114854
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