Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
74 (1999), S. 2770-2772
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The change in the reflection behavior of VO2 films for the 1.06 μm wavelength at the semiconductor–metal phase transition was investigated. The nonlinearity caused by photoinduced transition was used for phase conjugation of a pulsed Nd:YAG laser. At 60 Hz Q-switching rate and average intensities of the pump and probe waves at 1 and 0.3 W/cm2, respectively, the reflection coefficient of the conjugated wave was ∼1%, the threshold energy density was 8 mJ/cm2, the rise time of the signal was 30 ns. The response rate of the phase conjugation via the VO2 films is discussed. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.124009
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