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  • 1
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    Seismologische Übersichtskarte des Freistaates Sachsen (1996)
    Freiberg : Sächsisches Landesamt für Umwelt und Geologie / Bereich Boden und Geologie
    Details Availability
    Call number: K 97.0337
    Pages: 57x48 cm
    Edition: 1. Aufl.
    Branch Library: GFZ Library
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  • 2
    Electronic Resource
    Electronic Resource
    Investigations of pure rotational transitions of H2 self-perturbed and perturbed by He. I. Measurement, modeling, and quantum calculations (1998)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 109 (1998), S. 951-961 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: High resolution stimulated gain Raman spectroscopy is used to investigate the collisional parameters of pure rotational S0(j=0–4) lines of H2 in pure H2 and H2–He mixture. Measurements are performed between 300 and 1000 K in a density regime where the lines are essentially collisionally broadened (typically 10 amagat). For the first time, these highly accurate measurements of the frequencies of pure rotational lines allow one to correct previously measured values that did not take into account the collisional frequency shift. For both collisional systems, the shifting coefficients exhibit a linear behavior with the square root of temperature, similar to the behavior already observed in the Q branch. The broadening coefficients of the S0 branch increase nonlinearly with temperature contrary to the Q branch. For the H2–He system, both these new S0(j) data and previously measured Q(j) data are analyzed using a modeling of the broadening coefficients in terms of elastic and inelastic contributions. These different contributions are analyzed as a function of temperature and of the rotational quantum number j. Preliminary quantum calculations are used to assess the validity of the model. Further calculations will be presented in paper II. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.476638
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  • 3
    Electronic Resource
    Electronic Resource
    Band discontinuity fluctuations and local chemistry at the GaSe–Si interface (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1859-1861 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoemission spectromicroscopy data on Si–GaSe with 0.2 μm lateral resolution revealed laterally inhomogeneous interface Se–Si chemical reactions. The local Si 2p fits agrees with interface Si selenide parameters; the Se 3d peaks indicate a Si–selenide component; the Ga 3d peaks exhibit a metallic component whose intensity increases with Si coverage. This local interface reaction is related to lateral changes in the band lineup. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122306
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  • 4
    Electronic Resource
    Electronic Resource
    Ultrafast optical switching of second-harmonic generation at the C60 single-crystal surface (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3781-3783 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The switching of second-harmonic generation (SHG) at a C60 single-crystal surface has been observed in a pump-and-probe experiment. The SHG signal from a picosecond 1.17 eV laser pulse is suppressed by one order of magnitude upon illuminating the crystal surface with a 3.49 eV pump pulse. The nonlinear optical response is faster than 45 ps and persists for longer than 20 ns. SHG suppression to 1/e occurs at pump densities as low as 2.8 μJ/cm2. We suggest that nonlocalized excited electronic states determine the change in the nonlinear optical behavior. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361213
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  • 5
    Electronic Resource
    Electronic Resource
    Inhomogeneous and thickness-dependent chemical reactivity at GaSe–Si interfaces (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 7694-7696 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Scanning photoelectron spectromicroscopy experiments on the edge of patterned Si overlayers on GaSe revealed the presence of an inhomogeneous reaction with a metallic-like Ga phase separation. The Si–Se chemically shifted components show lateral variations and a thickness-related SiSe2/SiSex (x=0.5, 1, and 1.5) ratio on a micrometer scale. The dependence of the peak intensities on the overlayer thickness suggests an initial layer-by-layer coverage until (approximate)2 Å, followed by a clustering growth mode. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370573
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  • 6
    Electronic Resource
    Electronic Resource
    Schottky barrier and interface formation of metal–GaTe(001) interfaces (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 1990-1993 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We studied the deposition of Au, In, Ag, and Al overlayers onto clean-cleaved GaTe(001) surfaces at room temperature by x-ray photoelectron spectroscopy. Gold and In overlayers did not produce evidence of chemical reactions, and neither with cation nor anion outdiffusion. Gold overlayers exhibited no evidence of island formation and a layer-by-layer overlayer coverage. The deposition of In revealed the presence of clustering for a metal thickness higher than 6 Å. On the other hand, the deposition of Al lead to an exchange reaction with a metalliclike Ga phase separation. Core level analysis of the Ag–GaTe interface revealed no noticeable change of the shape of the peaks. The dependence of the peak intensities on overlayer thickness showed an initial layer-by-layer coverage until 1.8 Å, followed by a clustering growth mode. From about 3.7 Å Ag thickness, significant Te outdiffusion was observed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368332
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  • 7
    Electronic Resource
    Electronic Resource
    Chemical inhomogeneity and reactions of BiSrCaCuO surfaces detected by synchrotron imaging spectromicroscopy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2924-2926 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A microscopic chemical analysis of BiSrCaCuO (BSCCO) 2212 single crystals was performed with an unprecedented combination of high (submicron) lateral resolution and high energy resolution (100 meV or better). These performances, achieved with imaging synchrotron spectromicroscopy, enabled us to detect in a very small fraction of the investigated specimens, morphological and chemical inhomogeneities. Specifically, we found deviations from stoichiometry in the surface Sr content which have a subtle effect on the chemical environment of at least one other element, Ca. The different chemical environment was found to influence surface chemical reactions. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117325
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  • 8
    Electronic Resource
    Electronic Resource
    Re6Se7Br4 (1997)
    Oxford [u.a.] : International Union of Crystallography (IUCr)
    Acta crystallographica 53 (1997), S. 1178-1180 
    Details
    ISSN: 1600-5759
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0108270197004666
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  • 9
    Electronic Resource
    Electronic Resource
    Optical study of an untwinned single crystal: ab-plane anisotropy (1999)
    Springer
    The European physical journal 8 (1999), S. 47-56 
    Details
    ISSN: 1434-6036
    Keywords: PACS. 74.25.Gz Optical properties - 74.72.Hs Bi-based cuprates - 78.30.-j Infrared and Raman spectra
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract: We report on the ab-plane polarized reflectance of an untwinned single crystal over the frequency range from 80 to (10 meV-4 eV) at temperatures between 10 and 300 K. We find a clear anisotropy in the ab-plane optical conductivity above and below , which is very similar to that formerly published data of (M.A. Quijada et al., Z. Phys. B 94, 255 (1994)). We employ both the one-component and two-component analyses to the optical data, which suggest that the normal-state infrared anisotropy of originates not only from the mass anisotropy, but also from the scattering rate anisotropy. Our results provide evidence that the electronic structures within the plane are anisotropic. In the superconducting state, there is a definite ab-plane anisotropy to the far-infrared absorption. This anisotropy could be due either to anisotropy of the superconducting gap or to anisotropy of the mid-infrared component to the conductivity. We also observe the superconducting condensate is anisotropic: The value of the superconducting penetration depth in the a-direction is slightly smaller than that along the b-axis.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s100510050667
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  • 10
    Electronic Resource
    Electronic Resource
    Localization effects in transition-metal doped Bi2Sr2CaCu2O8+y high-temperature superconductors (1995)
    Springer
    Journal of superconductivity 8 (1995), S. 635-636 
    Details
    ISSN: 1572-9605
    Keywords: Metal-insulator transition ; Electronic structure ; High-temperature superconductors
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Doping Bi2Sr2Ca1Cu2O8+y with Co causes a superconductor-insulator transition. We study correlations between changes in the electrical resistivity ρab(T) and the electronic bandstructure using identical single crystalline samples. For undoped samples the resistivity is linear in temperature and has a vanishing residual resistivity. In angle resolved photoemission these samples show dispersing band-like states. Co-doping decreases Tc and causes and increase in the residual resistivity. Above a threshold Co-concentration the resistivity is metallic (dρab/dT〉0) at room temperature, turns insulating below a characteristic temperature Tmin and becomes superconducting at even lower temperature. These changes in the resistivity correlate with the disappearance of the dispersing band-like states in angle resolved photoemission. We show that Anderson localization caused by the impurity potential of the doped Co-atoms provides a consistent explanation of all experimental features. The coexistance of insulating (dρab/dT 〈0) normal state behavior and superconductivity indicates that the superconducting ground state is formed out of spatially almost localized carriers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00727453
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