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  • Articles  (96)
  • 2010-2014  (6)
  • 1995-1999  (46)
  • 1985-1989  (44)
  • Physics  (95)
  • Geosciences  (6)
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  • Articles  (96)
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  • 1
    Electronic Resource
    Electronic Resource
    Tribological properties of chromium implanted silicon nitride ceramics correlated with microstructure (1997)
    Springer
    Applied physics 65 (1997), S. 281-286 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 81.40; 61.80; 62
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: 3 N4 ceramic after chromium implantation were investigated for the dependence on implantation energy between 200 keV and 3 MeV at a fixed fluence of 1017 ions/cm2. The wear of the modified material is reduced for a load of 2 N independent of ion energy accompanied by a slight increase of the friction coefficient. At higher loads only high-energy implantations result in improved wear behaviour. Structural investigations show the absence of any new phases formed by ion implantation. All energies result in an amorphous layer. For lower energies this amorphous layer reaches up to the surface whereas at higher energies it is covered by still-crystalline but damaged material. The observed wear behaviour can be explained with the amorphization of the near surface region and the stress generated by the volume swelling of the amorphous layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050579
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  • 2
    Electronic Resource
    Electronic Resource
    Ion-induced depletion of hydrogen from a soft carbonized layer (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3833-3837 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Soft carbonized layers prepared in a glow discharge, with a hydrogen concentration of H:C∼4/3, are exposed to helium ion bombardment at energies between 0.3 and 2.6 MeV. A strong ion-induced depletion of up to 3×103 H atoms per incident 4He+ ion is observed by means of high-energy ion beam analysis. The hydrogen release is shown to be a local process, with the electronic energy deposition as the main responsible mechanism. The results are successfully compared to a model which takes into account local bond breaking and retrapping and the local formation of hydrogen molecules.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343399
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  • 3
    Electronic Resource
    Electronic Resource
    Dynamic depth profile measurements of implanted deuterium in nickel (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1893-1897 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Depth profiles of 10-keV deuterium implanted in nickel were obtained during implantation through elastic recoil detection between 233 and 313 K. The profiles were allowed to reach saturation at each measured temperature. At the lowest temperature, measurements with various implantation fluxes were performed. Aside from surface peaks, the depth profiles show a uniform density of deuterium in the implanted layer and the shape of these profiles is independent of the sample temperature or implantation fluence or flux. The temperature and fluence dependence could be successfully reproduced with a trapping-detrapping model considering three different trap binding energies. Two of the model parameters are in good agreement with previous calculations performed to reproduce reemission measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342900
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  • 4
    Electronic Resource
    Electronic Resource
    On the growth of segregated C layers on top of Fe films on pyrolytic graphite samples during high-fluence D+ irradiation at elevated temperature (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3400-3406 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: On Fe films evaporated on pyrolytic graphite, thick C layers segregate during high-temperature (above about 800 K) light ion irradiation if the penetrating ions are energetic enough to reach the Fe-graphite interface. The thickness of the C segregated layer and the C depth distribution in the Fe film have been determined with 2-MeV 4He+ Rutherford backscattering. A steady-state carbon overlayer is reached at high fluences (above about 1019 particles/cm2), the thickness of which depends on the energy of the irradiating beam for a given thickness of the Fe evaporated film. The anisotropic structure of the pyrolytic graphite substrate influences the thickness of the steady-state C overlayer, thicker C layers being measured for edge-oriented C substrates. Using the Monte Carlo code trim, the production of defects in the graphite substrate has been calculated for different thicknesses of the C overlayer. The total amount of defects produced in the graphite substrate has been identified as the parameter regulating the growth and the steady-state value of the C overlayer. With the depth distributions of defect production generated by trim as source functions, the diffusion of C interstitials in graphite under the influence of recombination with vacancies has been modeled. The segregating C fluxes are identified with the fluxes of interstitials arriving at the Fe/graphite substrate interface for a suitable choice of the parameters in the diffusion equation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342656
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  • 5
    Electronic Resource
    Electronic Resource
    Modeling of hydrogen implantation into graphite (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4860-4866 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new theoretical framework has been developed which is applicable to the implantation and ion-induced release of hydrogen isotopes in graphite. It provides a physical basis and a refinement of the predictions of the simple model of local saturation and mixing. The model treats the trapping at defects and a local release of trapped atoms by nuclear knock-on. Ion deposition and damage functions are taken from trim simulations. The detrapped atoms may become retrapped or recombine to molecules, which then are transported to the surface by fast molecular diffusion, and subsequently released. By the choice of suitable rate constants in the model calculations, different experimental findings for the implantation and high-fluence self-reemission of deuterons in graphite may be explained consistently. Examples cover the saturation as a function of temperature and energy, depth profiles, gas reemission, thermal desorption, and effects of predamage.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341234
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  • 6
    Electronic Resource
    Electronic Resource
    Permeation of implanted deuterium through Ni near room temperature (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 2733-2738 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The permeation of 2–22-keV deuterons implanted into 25-μm-thick cold-rolled Ni foils was studied near room temperature. The results are generally characterized by a time lag τ and a steady-state permeation rate J. The variation of τ with beam intensity and temperature indicates an average relative concentration of ∼4×10−4 of saturable bulk traps of binding energy 0.26±0.01 eV, plus a larger concentration of weaker traps. At the highest energy, J is well described by theory.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335415
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  • 7
    Electronic Resource
    Electronic Resource
    The interplay of sputtering and oxidation during plasma diffusion treatment (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1851-1853 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metals that form dense native surface oxide layers challenge plasma diffusion treatment techniques. Experimental results obtained during nitriding of stainless steel from real-time depth-resolved compositional analysis by elastic recoil detection give insight into the transport kinetics. In agreement with semiquantitative considerations on the oxide removal and the oxide growth, the interplay of sputtering and oxidation emerges as a key parameter. On this background, suggestions for practical applications and optimization of the modification processes are given for different plasma diffusion treatment techniques. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124849
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  • 8
    Electronic Resource
    Electronic Resource
    Light emission from CH and H sputtered from hydrogen-implanted graphite (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 2225-2226 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Characteristic spectra of light emission from CH molecules and hydrogen atoms sputtered from hydrogen-implanted graphite are observed. The relative intensities from both species vary with the implanted fluence. The CH yield remains constant while the Hα yield increases. This is consistent with two binding states of implanted hydrogen in graphite.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99539
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  • 9
    Electronic Resource
    Electronic Resource
    Roughness improvement and hardness enhancement in nanoscale Al/AlN multilayered thin films (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1951-1953 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Al/AlN multilayered thin films with periodic thickness λ less than 24 nm were developed by ion beam assisted deposition. A considerably small surface roughness comparable to that of the silicon substrate and much smaller than those of both monolithic Al and AlN films was obtained. Over the investigated range of λ, all the multilayers are harder than the homogeneous AlN film, and a significant hardness enhancement by a factor of ∼2 over that of the AlN film was observed in the multilayer with λ of 6 nm. Moreover, the hardness enhancement is not at the expense of the multilayer toughness, with the multilayer Al/AlN films showing improved plasticity as compared with the AlN film. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119752
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  • 10
    Electronic Resource
    Electronic Resource
    Phase identification of boron nitride thin films by polarized infrared reflection spectroscopy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 46-48 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Six different types of boron nitride films were investigated by polarized infrared reflection spectroscopy. Films with a highly cubic, mixed cubic and noncubic, and exclusively noncubic phase composition were synthesized using ion beam assisted deposition. Additionally, postdeposition argon ion irradiated cubic and noncubic boron nitride films as well as a nitrogen implanted boron sample were analyzed. Using this technique, besides the cubic phase, two different noncubic modifications, layered anisotropic and amorphous, could be distinguished. A preferential orientation of the normal axis of the sp2-bonded basal planes parallel to the substrate surface was observed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118113
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