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  • 1
    ISSN: 1600-5775
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: For the European X-ray multi-mirror (XMM) satellite mission and the German X-ray satellite ABRIXAS, fully depleted pn-CCDs have been fabricated, enabling high-speed low-noise position-resolving X-ray spectroscopy. The detector was designed and fabricated with a homogeneously sensitive area of 36 cm2. At 150 K it has a noise of 4 e− r.m.s., with a readout time of the total focal plane array of 4 ms. The maximum count rate for single-photon counting was 105 counts s−1 under flat-field conditions. In the integration mode more than 109 counts s−1 can be detected at 6 keV. Its position resolution is of the order of 100 µm. The quantum efficiency is higher than 90% from carbon K X-rays (277 eV) up to 10 keV. New cylindrical silicon drift detectors have been designed, fabricated and tested. They comprise an integrated on-chip amplifier system with continuous reset, on-chip voltage divider, electron accumulation layer stabilizer, large area, homogeneous radiation entrance window and a drain for surface-generated leakage current. At count rates as high as 2 × 106 counts cm−2 s−1, they still show excellent spectroscopic behaviour at room-temperature operation in single-photon detection mode. The energy resolution at room temperature is 220 eV at 6 keV X-ray energy and 140 eV at 253 K, being achieved with Peltier coolers. These systems were operated at synchrotron light sources (ESRF, HASYLAB and NLS) as X-ray fluorescence spectrometers in scanning electron microscopes and as ultra low noise photodiodes. The operation of a multi-channel silicon drift detector system is already foreseen at synchrotron light sources for X-ray holography experiments. All systems are fabricated in planar technology having the detector and amplifiers monolithically integrated on high-resistivity silicon.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1572-9508
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract This paper describes the performance of the Fully Depleted pn-junction CCD (pn-CCD) system, developed for ESA's XMM-satellite mission for soft x-ray imaging and spectroscopy in the single photon counting mode in the 100 eV to 10 keV photon range. The 58 mm x 60 mm large pn-CCD array, designed and fabricated at the Semiconductor Lab (Halbleiterlabor) of the Max-Planck-Institut, uses pn-junctions for registers and as backside structure. This concept naturally enables full depletion of the detector volume independent of the silicon wafer's resistivity and thickness, and as such make it an efficient detector for the x-ray region and the infrared. For high detection efficiency in the soft x-ray region and UV, an ultrathin pn-CCD backside deadlayer has been realized. Each pn-CCD-channel is equipped with its own on-chip JFET amplifier which, in combination with the CAMEX-amplifier and multiplexing chip, facilitates parallel readout and fast data rate: the cooled pn-CCD system can be read out at a data rate up to 3 MHz with an electronic noise floor of ENC 〈 5 e-.
    Type of Medium: Electronic Resource
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  • 3
    Publication Date: 1998-05-01
    Description: For the European X-ray multi-mirror (XMM) satellite mission and the German X-ray satellite ABRIXAS, fully depleted pn-CCDs have been fabricated, enabling high-speed low-noise position-resolving X-ray spectroscopy. The detector was designed and fabricated with a homogeneously sensitive area of 36 cm2. At 150 K it has a noise of 4 e− r.m.s., with a readout time of the total focal plane array of 4 ms. The maximum count rate for single-photon counting was 105 counts s−1 under flat-field conditions. In the integration mode more than 109 counts s−1 can be detected at 6 keV. Its position resolution is of the order of 100 µm. The quantum efficiency is higher than 90% from carbon K X-rays (277 eV) up to 10 keV. New cylindrical silicon drift detectors have been designed, fabricated and tested. They comprise an integrated on-chip amplifier system with continuous reset, on-chip voltage divider, electron accumulation layer stabilizer, large area, homogeneous radiation entrance window and a drain for surface-generated leakage current. At count rates as high as 2 × 106 counts cm−2 s−1, they still show excellent spectroscopic behaviour at room-temperature operation in single-photon detection mode. The energy resolution at room temperature is 220 eV at 6 keV X-ray energy and 140 eV at 253 K, being achieved with Peltier coolers. These systems were operated at synchrotron light sources (ESRF, HASYLAB and NLS) as X-ray fluorescence spectrometers in scanning electron microscopes and as ultra low noise photodiodes. The operation of a multi-channel silicon drift detector system is already foreseen at synchrotron light sources for X-ray holography experiments. All systems are fabricated in planar technology having the detector and amplifiers monolithically integrated on high-resistivity silicon.
    Print ISSN: 0909-0495
    Electronic ISSN: 1600-5775
    Topics: Geosciences , Physics
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