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  • Springer  (93)
  • American Institute of Physics (AIP)  (10)
  • Blackwell Publishing Ltd  (3)
  • Institute of Physics (IOP)
  • MDPI Publishing
  • 1995-1999  (106)
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  • 1
    Electronic Resource
    Electronic Resource
    Turbulization of nonlinear Langmuir oscillations in a cold plasma (1997)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 4 (1997), S. 3200-3203 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that the electric field of Langmuir oscillations in a cold plasma contains a component, independent of time, setting ions in motion. Using Lagrange variables, one-dimensional dynamics of plasma in respect to the interaction between electron oscillations and ion movement is investigated. As a consequence of this interaction, the crossing of electron trajectories occurs even at small amplitudes at time tc, i.e., one-dimensional turbulence appears in the system. The expression for tc is derived. In time tc ion displacements as well as ion energy are found to depend only on the electron–ion mass relationship. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.872460
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  • 2
    Electronic Resource
    Electronic Resource
    Electrical properties of ZnSe/GaAs (100) heterostructures grown by photostimulated vapor-phase epitaxy (1997)
    Springer
    Semiconductors 31 (1997), S. 8-10 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Epitaxial layers of ZnSe were grown on GaAs (100) by photostimulated vapor-phase epitaxy, using a He-Cd laser (power P⋍1 mW/cm2, hν=2.807 eV) at a substrate temperature of T= (175–300) K. The temperature dependences of the mobility of the majority charge carriers were studied in layers doped during growth, using such sources as AlCl3, Zn, Al, and Ga. Based on an analysis of the thermally stimulated current and thermally stimulated depolarization curves, parameters were established for seven deep local levels that have a substantial effect on the electrical characteristics of the heterostructures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187037
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  • 3
    Electronic Resource
    Electronic Resource
    Intensity and phase of reflected radiation in a vanadium dioxide structure with surface plasmons (1997)
    Springer
    Technical physics letters 23 (1997), S. 509-510 
    Details
    ISSN: 1090-6533
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Results of theoretical calculations are presented for the angular dependences of the reflection coefficient and phase of reflected p-polarized radiation at wavelengths of 6328 Å and 11 500 Å in vanadium dioxide layered structures with surface plasmons. Results of calculations are presented for the two phases of the vanadium dioxide films — semiconducting and metallic.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1261729
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  • 4
    Electronic Resource
    Electronic Resource
    Resolution of optically addressed liquid-crystal spatial light modulators (1998)
    Springer
    Technical physics letters 24 (1998), S. 520-522 
    Details
    ISSN: 1090-6533
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Results are presented of calculations of the modulation transfer function of optically addressed, liquid-crystal, spatial light modulators based on layered photoconductor-liquid crystal structures, including surface-plasmon light modulators. Allowance is made for diffusive spreading of carriers in the photoconductor and the propagation length of surface plasmons in the layered structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1262177
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  • 5
    Electronic Resource
    Electronic Resource
    Voltage dependences of the amplitude and phase of reflected radiation in liquid-crystal structures with surface plasmons (1997)
    Springer
    Technical physics letters 23 (1997), S. 727-729 
    Details
    ISSN: 1090-6533
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The results of a theoretical calculation of the amplitude and phase of p-polarized monochromatic radiation reflected from layered liquid-crystal structures with surface plasmons as a function of the external voltage applied to the structure (in the Kretschmann geometry) are reported.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1261670
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  • 6
    Electronic Resource
    Electronic Resource
    Temperature dependence of the intensity and phase of reflected light in a liquid-crystal structure with surface plasmons (1997)
    Springer
    Technical physics letters 23 (1997), S. 661-662 
    Details
    ISSN: 1090-6533
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The results of a theoretical calculation of the temperature dependence of the amplitude coefficient and phase of reflected radiation with wavelength λ=6328 Å in a liquid-crystal structure with surface plasmons are reported for the first time. The computational results could be helpful for developing temperature sensors and optically coupled thermal imagers based on liquid-crystal structures with surface plasmons.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1261649
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  • 7
    Electronic Resource
    Electronic Resource
    Absorption spectrum and excitons in thin films of the solid electrolyte RbCu4Cl3I2 (1998)
    Springer
    Physics of the solid state 40 (1998), S. 934-937 
    Details
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract We have investigated the absorption spectrum of thin films of the superionic conductor RbCu4Cl3I2 synthesized on NaCl crystalline substrates. It is shown that the electron and exciton excitations in the energy interval 3–6 eV are associated with optical transitions in the CuHal sublattice, and the edge of the fundamental band is controlled by optical transitions in the Cu(II)Hal sublattice. It is found that the large band gap of this compound (E g =3.86 eV) in comparison with those of CuCl and CuI is a result of the small number of Cu ions in the second coordination sphere. The temperature dependence of the spectral position and half-width of the low-temperature exciton band reveals features associated with the phase transitions γ→β (T c1=170 K) and β→α (T c2=220 K) and with disordering of the cation sublattice attendant to the transition to the superionic state.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1130451
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  • 8
    Electronic Resource
    Electronic Resource
    Phase optical bistability in structures with surface plasmons (1998)
    Springer
    Technical physics letters 24 (1998), S. 650-651 
    Details
    ISSN: 1090-6533
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract A theoretical analysis is made of the phenomenon of phase optical bistability in structures with surface plasmons. It is shown that in an optical waveguide with a nonlinear layer, not only amplitude but also phase bistability may occur when p-polarized radiation is reflected from the nonlinear waveguide.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1262232
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  • 9
    Electronic Resource
    Electronic Resource
    Growth of ZnSe films on GaAs(100) substrate by x-ray-enhanced, vapor-phase epitaxy (1997)
    Springer
    Semiconductors 31 (1997), S. 26-28 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Epitaxial films of ZnSe deposited on a GaAs(100) substrate are grown by x-ray-enhanced, vaporphase epitaxy (XEVPE) using a URS-55a source (CuKα emission, λ=1.542 Å, P∼1–3 mW/cm2) from powdered raw material in a purified hydrogen flow. The differences in the photoluminescence and exciton reflection spectra are investigated for single-crystal ZnSe films on GaAs(100) at T=4.5 K, which are subjected to compressive strain and are grown by x-ray enhanced and conventional VPE. The results indicate an improvement of the crystallographic structure of the epitaxial layer prepared by XEVPE. This is further corroborated by data from x-ray diffraction analysis. The observed phenomena are attributed to x-ray activated adsorption and desorption processes and to a change in the surface mobility of adsorbed atoms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187046
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  • 10
    Electronic Resource
    Electronic Resource
    Photoluminescence of localized exitons in coherently strained ZnS-ZnSe/GaAs(001) quantum wells (1997)
    Springer
    Semiconductors 31 (1997), S. 1244-1246 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The low-temperature photoluminescence (PL) of ZnS-ZnSe heterostructures grown in the form of single quantum wells (QW) by the non-conventional technology of photo-assisted vapor phase epitaxy has been investigated. It is shown that the inhomogeneity of the quantum wells can be explained in terms of a model based on disordering of the heterointerfaces. It is found that the mobility edge which separates the localized states from the delocalized states is 6 meV below the heavy-exciton ground state in the quantum wells with a nominal width L z=11 Å.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187304
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