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  • American Institute of Physics (AIP)  (8)
  • American Society of Hematology
  • 1995-1999  (8)
  • 1
    Electronic Resource
    Electronic Resource
    Properties of Czochralski-grown RAIO3 (R: Dy, Ho, and Er) single crystals for magnetic refrigeration (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 432-434 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetization of RAlO3 (R: Dy, Ho, and Er) single crystals along the c axis have been measured by the superconducting quantum interference device magnetometer. The single crystals are nominally pure and large sized, grown by the Czochralski method. Paramagnetic properties depend on the rare-earth elements. According to the magnetic entropy change, ErAlO3 single crystals are promising materials for the magnetic refrigerants using the Carnot cycle in the temperature range below 20 K. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359349
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  • 2
    Electronic Resource
    Electronic Resource
    High time resolution ion temperature and rotation velocity measurements by charge exchange spectroscopy using three interference filters : Proceedings of the 12th topical conference on high temperature plasma diagnostics (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 372-374 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The ion temperature and toroidal rotation velocity with high time resolution (τ∼1 ms) using charge exchange spectroscopy in JT-60U tokamak plasma have been measured. The method uses three interference filters that have slightly different peak wavelengths. These filters are selected according to the ion temperature and rotation velocity expected at the measured position. The system with a time resolution of 1 ms was applied to the analysis of fast plasma phenomena. As an example, the time evolution of the C VI ion temperature and toroidal rotation velocity across the L–H transition has been measured. The toroidal rotation at a normalized minor radius (r/a=0.3) increases gradually after the L–H transition, while that at the edge changes from a speed of 5 km/s before the transition to −40 km/s after the transition within a time of 5–10 ms. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149444
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  • 3
    Electronic Resource
    Electronic Resource
    Versatile millimeter-wave interferometer with two frequencies in the divertor region of JT-60U (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 3181-3185 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A millimeter-wave interferometer having a capability of concomitant electron temperature measurement, based on the electron cyclotron absorption (ECA) technique, has been developed for divertor diagnostics in JT-60U. Three lines of sight, which pass through the X point horizontally, the inboard divertor and the outboard divertor, are chosen. Two transmitter/receiver units with frequencies of 217 and 183 GHz are employed in order to eliminate the spurious vibration effect using a two color scheme. The two independent units are also arranged to enable two sight line measurements without the vibration compensation. Furthermore, these units allow us to apply the simultaneous ECA diagnostic. Due to the complexity of the transmission line inside the tokamak, the insertion loss is as large as 65 dB. However, the interferometer system can be operated with the signal-to-noise (S/N) ratio of about 20 dB due to the low equivalent input noise of −90 dB m. The measurements performed for several types of the JT-60U discharges indicate the feasibility of the system and the rapid reduction of the electron density near the X point at the high confinement mode transition is first demonstrated. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149081
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  • 4
    Electronic Resource
    Electronic Resource
    Steady-state improved confinement studies in the JT-60U tokamak (1995)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 2 (1995), S. 2249-2255 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: As a result of dynamic control of the heat deposition and current profile, notably a large fusion product 4×1020 m−3 s keV (equivalent QDT=0.25) was sustained for 1.5 s in the high-confinement mode (H-mode) discharge accompanied with the edge localized modes (ELM), while the highest performance achieved transiently was 1.2×1021 m−3 s keV (equivalent QDT=0.46). A doubly formed transport barrier at the q=3 surface and near the edge is essential for the improvement in confinement. It has also been found that the active shear formation in the toroidal flow velocity, as well as the magnetic shear, can increase the critical edge pressure at the onset of ELMs, which constrain the maximum fusion performance. Further extension to the high-βN (=〈βt〉apBT/Ip) regime yielded the values of βN=2.9, βp=2.6 and the H-factor (=τE/τEITER-89P) of 2.5 for 0.7 s under the full current-drive condition. In these high-βN discharges, the bootstrap component was 74% of the total plasma current before the beam injection, while the neutral beam current drive (NBCD) fraction was 37%. It is stressed that effective current drive in the central region, which can sustain the peaked current profile against the bootstrap component, is indispensable for the efficient steady-state operation. Major results from the confinement physics studies, such as the characteristics of the primary barrier and the turbulence transport across the secondary barrier, are also addressed in this paper. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.871486
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  • 5
    Electronic Resource
    Electronic Resource
    Study on ferroelectric domains in BaTiO3 crystalline films and bulk crystals by atomic force and scanning electron microscopies (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 999-1002 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed cylindrical 180° domains and 90° multi-domains in crystalline films by an atomic force microscope and in bulk crystals by a scanning electron microscope. The size distribution of the 180° domain end is determined graphically by a computer analysis. A discussion is given on why a thickness dependence of the end size coincides with the theoretical relation proportional to the square root of the thickness over a wide range from 4 nm to 1.4 mm and why the 90° domain is found only in a film of a particular thickness. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368167
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  • 6
    Electronic Resource
    Electronic Resource
    Atomic force and scanning electron microscopic observations of surface and domain structures of BaTiO3 films and bulk crystals (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1486-1488 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tapping-mode atomic force and in situ scanning electron microscopic observations of surface and ferroelectric domain structures are performed, respectively, for BaTiO3 crystalline films grown on {100}SrTiO3 substrates by molecular beam epitaxy and for bulk crystals prepared by the top-seeded solution growth technique. Reconstructionlike structures of very long periods are found for the first time in both thin (20 nm) and thick (1000 nm) films. A dependence of the end size of pole-type 180° domains observed in films and bulk crystals on their thickness agrees with the relation expected theoretically. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119944
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  • 7
    Electronic Resource
    Electronic Resource
    Growth and characterization of K3Li2(TaxNb1−x)5O15 crystals for blue second-harmonic-generation applications (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 744-746 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Potassium lithium tantalate niobate, K3Li2(TaxNb1−x)5O15, or KLTN single crystals were grown by spontaneous crystallization method, and it has been demonstrated that the KLTN crystal has high potential as a nonlinear crystal for blue second-harmonic-generation (SHG) applications. Ta substitution for Nb site in K3Li2Nb5O15 crystal improves the transparency in the blue light region and decolorizes the material. Compared with K3Li2Nb5O15, the K3Li2Ta5O15 crystal exhibits a 60 nm blueshift of the absorption edge from 376 to 316 nm, and decreases its absorption coefficient from 2.3 to 0.3 cm−1 at 400 nm. The phase-matched frequency doubling of the Ti:sapphire infrared laser for blue SHG at room temperature has been demonstrated with the KLTN bulk crystal. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116728
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  • 8
    Electronic Resource
    Electronic Resource
    Scanning tunneling microscopy study of GaAs(001) surface prepared by deoxygenated and de-ionized water treatment (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2837-2839 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter presents the scanning tunneling microscopy (STM) images of GaAs(001) surfaces prepared by deoxygenated and de-ionized water (DODIW) treatment. The STM images reveal that the missing-dimer rows and unit cells of the 2×4 structure and atomic-layer steps of Ga–As clearly appear after heating the samples above 500 °C in an ultrahigh vacuum. These experimental results suggest the DODIW treatment can attain atomically flat GaAs(001) surface. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113446
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