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  • 1
    Electronic Resource
    Electronic Resource
    Direct monitoring of thermally activated leakage current in AlGaInP laser diodes (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2540-2542 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using specially prepared structures, we have observed emission from a layer of direct-gap "monitor" material placed between the p-contact layer and p-cladding layer of a conventional 670 nm GaInP laser diode at room temperature. This observation provides direct evidence for electron leakage through the p-cladding layer in these devices. Furthermore, although emission from the quantum well and waveguide core both pin above threshold, indicating that the Fermi levels clamp throughout the active region, the monitor emission continues to rise above threshold. This is characteristic of a drift component to the leakage current, which we have confirmed by a simulation of the carrier transport processes through the cladding layer with and without drift. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123891
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  • 2
    Electronic Resource
    Electronic Resource
    Electron transport in AlGaInP quantum well lasers (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1748-1750 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By placing a direct-gap monitor layer (or collector) in the p-cladding layer of red-emitting AlGaInP laser diode structures, we have studied the transport of electrons through this layer by observation of spontaneous emission. Pulsed optical excitation superimposed on cw electrical injection has been used to determine the delay time between optical injection of carriers into the well and radiative recombination from the monitor pit. Computer simulations using measured values of minority carrier lifetime for the well and monitor layer show that the transit time for electrons through the p-cladding layer correspond to an electron mobility of 160 cm2/V s. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124807
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