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  • American Institute of Physics (AIP)  (5)
  • 1995-1999  (5)
  • 1
    Electronic Resource
    Electronic Resource
    Heat capacity of ternary compounds RNiGe(R=Gd, Dy, Er, and Y) (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7410-7412 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The heat capacity of the ternary compounds RNiGe(R=Er, Dy, Gd, and Y) was studied in the temperature range between 2 and 40 K. From the heat capacity curves, Néel temperatures are found to be 3.3, 7.4, and 10.7 K for ErNiGe, DyNiGe, and GdNiGe, respectively. The heat capacity of YNiGe was well fitted with an average Debye temperature of 272 K in the temperature range between 2 and 40 K. The changes of magnetic entropy indicate a strong influence of the crystal field on the Er+3 and Dy+3 ion in ErNiGe and DyNiGe compounds. These results suggest the possibility of using these compounds as magnetic regenerator materials near the temperature of 4.2 K. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360395
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  • 2
    Electronic Resource
    Electronic Resource
    Detection of shear wave in ultrasonic range by using a laser Doppler vibrometer (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 2572-2573 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A laser Doppler vibrometer is used to measure shear waves propagating through solids in the ultrasonic frequency range. The laser Doppler vibrometer detects translational motion of small spherical lenses mounted on a solid surface. Stacking of wave-form signals increases the signal-to-noise ratio. Wave motion on a solid surface can be obtained from the surface vibrations measured at different incident angles of a laser beam. The observed longitudinal and shear wave amplitudes from a thickness-dilation-mode transducer agreed fairly well with the calculated amplitudes modeled by a piston force source. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148961
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  • 3
    Electronic Resource
    Electronic Resource
    Structure and magnetic properties of Sm3(Fe, V)29NX (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 4675-4677 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystal structure and magnetic properties of Sm3(Fe, V)29NX compounds were investigated. It was found that the novel nitride, Sm3(Fe, V)29N2, is more stable than Sm3(Fe, V)29N4 in the atmosphere with low nitrogen pressure. The x-ray and electron diffraction studies show that the nitrides retain the same crystal structure as Sm3(Fe, V)29. The lattice parameters of Sm3(Fe, V)29N2 are a=1.084 nm, b=0.870 nm, c=0.985 nm, and β=97.06°. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370444
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  • 4
    Electronic Resource
    Electronic Resource
    Enhanced hydrogenation and acceptor passivation in Si by pressurized water boiling (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 64-66 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It has been shown that a pressurized water boiling (PWB) at 2 atmospheric pressures and 120 °C in an autoclave vessel accelerates significantly hydrogenation and neutralization of B acceptors in Si. Compared with boiling at atmospheric pressure, PWB reduces more the free-hole IR absorption and increases more the sheet resistivity in B implanted p+ layer on n-type substrate. An IR absorption of B–H stretching vibration (∼1907 cm−1) has been detected at 16 K for a p+ layer which was PWB processed for only 6 h. Concentration increase of H-related species in water and faster diffusion of H in Si at higher temperature may be the cause. In contrast with other hydrogenation techniques, water boiling hardly passivates donors in Si even for 10 h PWB. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115494
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  • 5
    Electronic Resource
    Electronic Resource
    Direct-injection high-Tc dc-SQUID with an upper YBa2Cu3O7−x ground plane (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2690-2692 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated direct-injection high-Tc superconducting quantum interference devices (SQUIDs) with integrated YBa2Cu3O7−x (YBCO) ground planes in the upper part of structure. The YBCO/PrBa2Cu3O7−x(PBCO)/YBCO edge junctions with 10-nm-thick PBCO barriers showed RSJ-like current-voltage (I–V) characteristics before and after the ground plane formation. We measured the voltage modulations of these SQUIDs with two different hole sizes to evaluate the line inductance. At a temperature of 30 K, the estimated line inductance under the ground plane was about 1.0 pH/(square, open), while the estimated line inductance without the ground plane was 2.8 pH/(square, open). © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118995
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