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  • American Institute of Physics (AIP)  (9)
  • 1995-1999  (9)
  • 1
    Electronic Resource
    Electronic Resource
    The role of zinc pre-exposure in low-defect ZnSe growth on As-stabilized GaAs (001) (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 939-941 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Zinc coverage and the structures of Zn-exposed As-stabilized GaAs(001)-(2×4) and -c(4×4) surfaces have been studied using x-ray photoelectron spectroscopy and scanning tunneling microscopy in order to clarify the role of the Zn pre-exposure process in ZnSe growth on GaAs(001). Since Zn atoms stick on the GaAs-(2×4) surface even though their interaction is very weak, Zn may act as a balancer to form a neutral ZnSe/GaAs interface. Zn can also remove excess As atoms and make a "pure" (2×4) structure that is the only possible starting surface for low-defect ZnSe heteroexpitaxy on a GaAs(001) surface. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122045
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  • 2
    Electronic Resource
    Electronic Resource
    Improvement of far-field pattern in nitride laser diodes (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2960-2962 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have clearly demonstrated a single spot in a far-field pattern of nitride-based laser diodes with a thick n-AlGaN layer/low-temperature-deposited buffer layer/sapphire. This AlGaN-based structure has realized a crack-free 1-μm-thick n-type Al0.06Ga0.94N cladding layer, leading to suppression of optical leakage from the waveguide region to the underlying layer and improvement of optical confinement. The threshold current of the laser diode is about 230 mA, which is comparable to or better than that of our laser diodes with the conventional GaN-based structure. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125201
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  • 3
    Electronic Resource
    Electronic Resource
    Atomic nitrogen doping in p-ZnSe molecular beam epitaxial growth with almost 100% activation ratio (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1077-1079 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An almost 100% activation ratio {(NA-ND)/[N]} for a nitrogen-doped ZnSe molecular beam epitaxy (MBE) layer with the highest net acceptor concentration (NA-ND) of 1.2×1018 cm−3 was obtained using a high-power rf plasma source. Even at this high NA-ND value, a 4.2 K photoluminescence spectrum shows bound exciton emission and deep donor–acceptor pair emission with well-resolved phonon replicas. The high activation in nitrogen doping could be ascribed to the generation of the predominant atomic nitrogen and to the suppressed extraction of nitrogen ions and excited neutral nitrogen molecules due to the structure of the orifice placed between the MBE growth chamber and the plasma discharge tube of the high-power plasma source. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119733
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  • 4
    Electronic Resource
    Electronic Resource
    Anomalous surface segregation of Sb in Si during epitaxial growth (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 67-69 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A delta-function-shaped Sb doping spike in Si is prepared by deposition of Sb on Si(001) followed by low-temperature molecular beam epitaxy of Si. The depth profile of the Sb atoms is measured using high-resolution Rutherford backscattering spectroscopy, yielding a depth resolution of 0.3 nm. The observed profile shows two peaks corresponding to the δ-doped layer (of width 0.5 nm) and Sb atoms on the surface. The latter are due to surface segregation of Sb atoms during the growth of the Si cap layer. The surface segregation rate is derived from the observed results at temperatures 70–280 °C. It is larger than the value extrapolated from high-temperature ((approximately-greater-than)400 °C) data by several orders of magnitude and shows a very weak temperature dependence as compared to the high-temperature data. These features indicate a new surface segregation mechanism at low temperature. A mechanism for this anomalous segregation is discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118121
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  • 5
    Electronic Resource
    Electronic Resource
    Effects of interfacial chemistry on the formation of interfacial layers and faulted defects in ZnSe/GaAs (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2413-2415 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Existence of Zn-As and Ga-Se interfacial layers were suggested by transmission electron microscopy in Zn treated and Se treated or reacted ZnSe/GaAs interfaces, respectively. High densities of As precipitates and Shockley partials were introduced in films with Zn treatment on a c(4×4) As-rich GaAs surface. In addition, high densities of vacancies and Shockley partials were obtained in samples with a Se-reacted ZnSe/GaAs interface. Formation of the Shockley partials may originate from the stacking errors induced by disordering of Zn- or Ga-interstitials on the GaAs surface. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116151
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  • 6
    Electronic Resource
    Electronic Resource
    ZnSe epitaxy on a GaAs(110) surface (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1192-1194 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnSe molecular beam epitaxial growth on GaAs(110) substrates has been studied using reflection high-energy electron diffraction (RHEED), atomic force microscopy, and transmission electron microscopy. An atomically flat and low defect homoepitaxial buffer GaAs(110) was grown with high V/III ratio (≥150) and at low growth temperature (∼430 °C). At the beginning of ZnSe growth on a GaAs(110) buffer epitaxial layer, RHEED oscillation was observed and no facet was seen on a pseudomorphic ZnSe(110) surface. Low defect ZnSe films (defect density ≤105 cm−2) were also obtained without the Zn preexposure process necessary for low defect ZnSe(001) growth. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119622
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  • 7
    Electronic Resource
    Electronic Resource
    Dependence of generation and structures of stacking faults on growing surface stoichiometries in ZnSe/GaAs (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1408-1410 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin ZnSe films were grown by molecular beam epitaxy on Zn exposed (2×4) As-stabilized surfaces of GaAs epilayers under varied beam flux ratios. A very low density of faulted defects in the range of ∼ 104/cm2 was generated in samples grown under a condition with a mixture of both (2×1) and weak c(2×2) surface reconstructions at the initial stages of growth. However, an asymmetric distribution on the densities of extrinsic cation- and anion-terminated Shockley-type stacking faults were generated, respectively, in samples grown under Zn- and Se-rich surface stoichiometries. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117597
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  • 8
    Electronic Resource
    Electronic Resource
    The effect of nitrogen ions emitted from a plasma source on molecular beam epitaxial growth of p-ZnSe:N (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 485-487 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Excited neutral nitrogen species emitted from a rf plasma source were characterized by the laser-induced fluorescence (LIF) spectroscopy, while nitrogen ions were detected by the ion counting method. The LIF intensity for nitrogen molecules increases monotonously up to the rf power of 100 W and saturates over 100 W. On the contrary, ion count of nitrogen ions shows a gradual increase up to 100 W, then rapidly increases above 100 W. The correlation between the number of excited nitrogen species and the net acceptor concentration (NA−ND) of nitrogen doped ZnSe epitaxial layers for various rf powers has been studied. We confirm that the excited neutral nitrogen molecules are effective for acceptor doping, while nitrogen ions enhance carrier compensation presumably due to degradation of crystal quality. We show that the activation ratio {(NA−ND)/[N]} of p-ZnSe:N is greatly improved by removing ions from the nitrogen plasma. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119586
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  • 9
    Electronic Resource
    Electronic Resource
    Efficient doping of nitrogen with high activation ratio into ZnSe using a high-power plasma source (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 81-83 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a high-power (5 kW) rf plasma source for nitrogen doping in ZnSe molecular beam epitaxy. Optical emission spectroscopy shows dominant atomiclike emissions around 800 nm due to excited neutral nitrogen atoms in the high power region and their intensities rapidly increase with increasing the rf power from 1 to 3 kW. The high net acceptor concentration (NA–ND) of 1.2×1018 cm−3 was achieved at the growth temperature of 220 °C and the activation ratio [(NA–ND)/N] as high as 60%, which is the highest value so far obtained for NA–ND∼1018 cm−3. Consequently, the PL spectrum showed well-resolved deep donor-acceptor pair emissions even with high NA–ND. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119314
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