ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report a simple technique for fabricating a layer of isolated Si quantum dots on SiO2 glass substrates. This technique uses conventional low-pressure chemical-vapor deposition for an extremely short deposition time in the early stage of poly-Si film growth. The layer after a deposition time of 60 s has isolated Si nanocrystals 5–20 nm in diameter and 2–10 nm in height. The measurements of optical absorption coefficient α show that the absorption edge for Si nanocrystals shifts to higher energies compared to that of bulk Si, indicating a widening of the energy gap caused by quantum size effects. The linear relationship (αhν)1/2 against hν suggests that the Si nanocrystal, whose diameter is as small as 10 nm, basically maintains the properties of an indirect band-gap semiconductor. Special attention must be paid to the Brownian migration of Si nanocrystals for fabricating Si quantum dots. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.363359
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