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  • American Institute of Physics (AIP)  (7)
  • Wiley-Blackwell
  • 1995-1999  (7)
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Year
  • 1
    Electronic Resource
    Electronic Resource
    Depth profile of trapped charges in oxide layer of 6H-SiC metal–oxide–semiconductor structures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 282-287 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oxide layers etched at an angle were fabricated on a 6H-SiC substrate by varying etching time in diluted hydrofluoric acid, and 6H-SiC metal–oxide–semiconductor structures with various oxide thicknesses were formed. High-frequency capacitance–voltage measurements were carried out for determining the change in gate voltages corresponding to the midgap condition as a function of the thickness of the oxide layer, and the depth profile of trapped charge density in the oxide was estimated from the result. It is found that negative charges build up near the 6H-SiC/SiO2 interface, and that positive charges accumulate in the region at 40 nm from the interface. No significant difference is observed in the depth profiles of the trapped charge density between the oxide layers on the carbon and silicon faces. The origin of these trapped charges is discussed in conjunction with the carbon-related compounds in the oxide layers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362817
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  • 2
    Electronic Resource
    Electronic Resource
    Characterization of carrier concentration and stress in GaAs metal-semiconductor field-effect transistor by cathodoluminescence spectroscopy (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 1693-1696 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the cathodoluminescence spectra around the gate electrode in the cross section of a GaAs metal-semiconductor field-effect transistor with a detector and proposed a new technique to estimate the carrier concentration and stress in electronic devices, using cathodoluminescence spectroscopy. From a comparison between maps of the peak intensity and peak-energy shift, it is found that there is heavy carrier doping in the drain and source regions and that the carrier concentration is about 6×1017 atoms/cm3. The carrier concentration estimated from the peak-energy shift agrees well with that obtained from the capacitance–voltage method. Furthermore, it is found that there is hardly any carrier doping and that stresses are relaxed at a distance of about 2 μm from the gate electrode. Cathodoluminescence spectroscopy is a useful technique for estimating the two-dimensional distribution of the carrier concentration and stress in electronic devices within a short amount of time. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368238
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  • 3
    Electronic Resource
    Electronic Resource
    Characterization of anisotropic stress around Si trenches by polarized Raman spectroscopy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 941-944 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polarized Raman spectra around trenches formed on (100) silicon wafers have been measured and it has been found that the peak frequency shift varies with the polarization configuration, suggesting that anisotropic stresses occur around the trenches. The different stress components have been calculated by the use of the polarization Raman technique and it was found that the stress distribution of each component approximately agrees with that of each component simulated by a finite element method. Polarized Raman spectroscopy is a powerful technique for the estimation of an anisotropic stress of an electronic silicon device in situ. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360287
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  • 4
    Electronic Resource
    Electronic Resource
    Spectroscopic measurement of impurity ion behavior in the GAMMA10 tandem mirror : Proceedings of the 12th topical conference on high temperature plasma diagnostics (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 332-335 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Behavior of impurity ions has been investigated using visible spectroscopy in the GAMMA10 tandem mirror. A 40 channel visible spectrometer system has been developed for measurements of the ion temperature and ion flow velocity. The spectrometer consists of a 100 cm monochromator, a 40 channel optical fiber array and an image intensifier tube coupled with a charge coupled device TV camera. The spectra from low ionization states of oxygen and carbon are measured in ion cyclotron range of frequency heated plasmas. High ion temperatures (3–10 keV) of O4+ are observed in the anchor region, where the minimum B mirror field is produced by baseball coils. The O4+ ion is heated by the fourth harmonic frequency of O4+, which is most likely due to the cyclotron higher harmonic damping. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149346
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  • 5
    Electronic Resource
    Electronic Resource
    Charge-exchange neutral particle measurements on electron cyclotron resonance heating experiments in hot-ion-mode plasmas of the GAMMA 10 tandem mirror : Proceedings of the 12th topical conference on high temperature plasma diagnostics (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 849-852 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Charge-exchange (C–X) neutral particle measurements have been carried out in hot-ion-mode plasmas of the GAMMA 10 tandem mirror. In the present experiment, a microwave power of 40 kW in 28 GHz is injected toward a second harmonic ECR layer located in the vicinity of the ICR layer at the central region and the radial profiles of ion temperatures determined from the energy spectrum of the C–X neutrals by using a neutral particle energy analyzer (NPA) are investigated from the viewpoint of ion energy balance. At the onset of the ECRH pulse, a remarkable increase of C–X neutral flux with high energy (few keV to few tens keV) is observed with NPA and the resultant ion temperature on the plasma axis is found to increase from 2.5 to 5.0 keV at the electron line density of 3×1013 cm−2. Based on the measured plasma parameters, radial profiles of ion-energy losses due to classical processes are evaluated and ECRH in the central region is confirmed to reduce the energy loss due to electron drag significantly in the core-plasma region. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149287
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  • 6
    Electronic Resource
    Electronic Resource
    Band-gap renormalization and band filling in Si-doped GaN films studied by photoluminescence spectroscopy (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4400-4402 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied band-gap renormalization and band filling in Si-doped GaN films with free-electron concentrations up to 1.7×1019 cm−3, using temperature-dependent photoluminescence (PL) spectroscopy. The low-temperature (2 K) PL spectra showed a line-shape characteristic for momentum nonconserving band-to-band recombination. The energy downshift of the low-energy edge of the PL line with increasing electron concentration n, which is attributed to band-gap renormalization (BGR) effects, could be fitted by a n1/3 power law with a BGR coefficient of −4.7×10−8 eV cm. The peak energy of the room-temperature band-to-band photoluminescence spectrum was found to decrease as the carrier concentration increases up to about 7×1018 cm−3, followed by a high-energy shift upon further increasing carrier concentration, due to the interplay between the BGR effects and band filling. The room-temperature PL linewidth showed a monotonic increase with carrier concentration, which could be described by a n2/3 power-law dependence. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371377
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  • 7
    Electronic Resource
    Electronic Resource
    Raman scattering from nanometer-sized diamond (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 694-696 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured Raman spectra of diamond with nanometer size, called cluster diamond. The Raman bands assigned to sp2 and sp3 clusters have been observed at around 1600 and 1322 cm−1, respectively. This result suggests that the cluster diamond slightly contains the sp2 cluster. The Raman band assigned to sp3 cluster is found to shift by −10 cm−1, compared with that of bulk crystal and to be asymmetric with some tailing toward lower Raman frequency. The observed Raman spectrum agrees well with that calculated by a phonon confinement model. The crystallite size of the cluster diamond estimated from the phonon confinement model agrees approximately with that estimated from x-ray measurement. Raman spectroscopy gives some information about the crystallite size of diamond particles with nanometer size. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115206
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