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  • American Institute of Physics (AIP)  (2)
  • Blackwell Publishing Ltd
  • 1995-1999  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Advancing metal–oxide–semiconductor theory: Steady-state nonequilibrium conditions (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 7647-7661 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article investigates steady-state nonequilibrium conditions in metal–oxide–semiconductor (MOS) capacitors. Steady-state nonequilibrium conditions are of significant interest due to the advent of wide-gap semiconductors in the arena of MOS (or metal–insulator–semiconductor) devices and due to the scaling of oxide thickness in Si technology. Two major classes of steady-state nonequilibrium conditions were studied both experimentally and theoretically: (i) steady-state deep depletion and (ii) steady-state low level optical generation. It is found that the identification and subsequent understanding of steady-state nonequilibrium conditions is of significant importance for correct interpretation of electrical measurements such as capacitance–voltage and conductance–voltage measurements. Basic implications of steady-state nonequilibrium conditions were derived for both MOS capacitors with low interfaces state density Dit and for oxide semiconductor interfaces with a pinned Fermi level. Further, a photoluminescence power spectroscopy technique is investigated as a complementary tool for direct-gap semiconductors to study Dit and to monitor the interface quality during device fabrication. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365343
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  • 2
    Electronic Resource
    Electronic Resource
    Near-field optical spectroscopy of single quantum wires (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 988-990 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low temperature near-field scanning optical microscopy is used for spectroscopic studies of single, nanometer dimension, cleaved edge overgrown quantum wires. A direct experimental comparison between a two dimensional system and a single genuinely one dimensional quantum wire system, inaccessible to conventional far field optical spectroscopy, is enabled by the enhanced spatial resolution. We show that the photoluminescence of a single quantum wire is easily distinguished from that of the surrounding quantum well. Emission from localized centers is shown to dominate the photoluminescence from both wires and wells at low temperatures. A factor of 3 absorption enhancement for these wires compared to the wells is concluded from the photoluminescence excitation data. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116121
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