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  • 1
    Electronic Resource
    Electronic Resource
    Clustering Process of Point Defects in GaP Studied by Transmission Electron Microscopy (1995)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 196-201 (Nov. 1995), p. 1279-1284 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/01/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.196-201.1279.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Electrical spin injection in a ferromagnetic semiconductor heterostructure (1999)
    [s.l.] : Macmillian Magazines Ltd.
    Nature 402 (1999), S. 790-792 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Conventional electronics is based on the manipulation of electronic charge. An intriguing alternative is the field of ‘spintronics’, wherein the classical manipulation of electronic spin in semiconductor devices gives rise to the possibility of reading and writing non-volatile ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/45509
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  • 3
    Electronic Resource
    Electronic Resource
    Hot-atom mechanism in photodesorption of molecular oxygen from a stepped platinum (113) surface (1998)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 108 (1998), S. 10231-10238 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The photodesorption of oxygen admolecules was studied on a stepped Pt(113)=(s)2(111)×(001) surface with 193 nm irradiation at 110 K. Multidirectional desorptions were found to collimate at ±12–20° and ±45–49° off the surface normal and also along the surface normal in a plane along the trough. The first component is always dominant, and the weak second component only appears at higher oxygen coverages. The normally directed desorption is not significant. The translational energy of desorbing O2 peaks around 15–20° and 50°, confirming the inclined desorptions. It is proposed that these inclined components are due to the desorption induced by the impact of oxygen admolecules with hot oxygen atoms from the photodissociation of adsorbed molecular oxygen, emitted along the trough. A simple cosine distribution was found to fit the thermal desorption from oxygen admolecules and also the recombinative desorption of oxygen adatoms. The 193 nm irradiation also produces additional, less tightly bound oxygen adatoms, which yield a desorption component collimated at 15° from the surface normal in the step-down direction. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.476483
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  • 4
    Electronic Resource
    Electronic Resource
    Enhancement of intersubband transition energies in GaAs quantum wells by Si delta doping of high concentration (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 719-721 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Intersubband light absorption measurements have been performed on a series of GaAs/AlAs quantum wells with heavy delta doping of Si atoms in the range 9.0×1011–6.5×1012 cm−2. The increase of intersubband transition energy by as much as 38 meV has been observed, and attributed to the deepening of the V-shaped potential by the Si layer and to the depolarization effects. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120856
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  • 5
    Electronic Resource
    Electronic Resource
    Interlayer exchange in (Ga,Mn)As/(Al,Ga)As/(Ga,Mn)As semiconducting ferromagnet/nonmagnet/ferromagnet trilayer structures (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2122-2124 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetic properties of all-semiconductor (Ga,Mn)As/(Al,Ga)As/(Ga,Mn)As trilayer structures are studied. The interactions between the two ferromagnetic (Ga,Mn)As layers are investigated by magnetotransport measurements in a number of samples with different GaAs thickness or with different Al content in the intermediary nonmagnetic (Al,Ga)As layer. The results indicate that carriers present in the nonmagnetic layer mediate the coupling between the two ferromagnetic layers. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122398
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  • 6
    Electronic Resource
    Electronic Resource
    A new apparatus for in situ photoluminescence spectroscopy in a transmission electron microscope (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 4866-4869 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have developed an in situ TEM/PL apparatus, which enables us to excite PL emissions from a microscopic area of a specimen inside a TEM. The microscopical area of 20 μm can be examined by TEM, PL, and CL methods under the same experimental conditions. The apparatus may be applied to a transmission electron microscope of side-entry type with a minor modification. The apparatus is extremely useful for microscopic characterization of structural and electronic properties in an inhomogeneous material. Utilizing the apparatus, we have examined the spatial distribution of extended defects and point-defect complexes in CVD diamond. The apparatus will be utilized to study the structural and optical properties of materials under electron irradiation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146166
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  • 7
    Electronic Resource
    Electronic Resource
    Silicon nanowhiskers grown on a hydrogen-terminated silicon {111} surface (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3700-3702 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using a hydrogen-terminated Si {111} surface as a substrate, we have grown Si nanowhiskers along the 〈112〉 direction by the vapor–liquid–solid mechanism. The minimum silicon core diameter was 3 nm and the maximum length was about 2 μm. The minimum silicon core diameter is close to the critical value for visible light emission due to the quantum confinement effect. In contrast to an oxidized Si surface, the hydrogen-terminated surface facilitates the formation of small molten Au–Si catalysts at a lower temperature (500 °C) which is slightly above the eutectic temperature. The formation of catalysts and the subsequent growth at the low temperature yield thin Si nanowhiskers on a Si substrate. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122868
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  • 8
    Electronic Resource
    Electronic Resource
    Spontaneous splitting of ferromagnetic (Ga, Mn)As valence band observed by resonant tunneling spectroscopy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 363-365 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Current–voltage characteristics of AlAs/GaAs/AlAs double barrier resonant tunneling diodes with ferromagnetic p-type (Ga, Mn)As on one side and p-type GaAs on the other have been studied. A series of resonant peaks have been observed in both polarities, i.e., injecting holes from p-type GaAs and from (Ga, Mn)As. When holes are injected from the (Ga, Mn)As side, spontaneous resonant peak splitting has been observed below the ferromagnetic transition temperature of (Ga, Mn)As without magnetic field. The temperature dependence of the splitting is explained by the the spontaneous spin splitting in the valence band of ferromagnetic (Ga, Mn)As. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121835
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  • 9
    Electronic Resource
    Electronic Resource
    Transport properties of two-dimensional electron gas in AlGaAs/GaAs selectively doped heterojunctions with embedded InAs quantum dots (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3444-3446 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transport properties of two-dimensional electron gas (2DEG) are studied in selectively doped GaAs/n-AlGaAs heterojunctions, in which nanometer-scale InAs dots are embedded in the vicinity of the GaAs channel. When the distance Wd between the InAs dot layer and the channel is reduced from 80 to 15 nm, the mobility μ of electrons at 77 K decreases drastically from 1.1×105 to 1.1 ×103 cm2/V s, while the carrier concentration increases from 1.1×1011 to 5.3×1011 cm−2. Such a reduction of mobility is found only when the average thickness of InAs layer is above the onset level (∼1.5 monolayer) for the dot formation. Origins of these changes in μ and Ns are discussed in connection with dot-induced modulations of the electronic potential V(r) in the channel. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115274
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  • 10
    Electronic Resource
    Electronic Resource
    InAs self-organized quantum dashes grown on GaAs (211)B (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2738-2740 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown InAs self-organized quantum dots and quantum dashes on GaAs (211)B substrates by molecular beam epitaxy. The growth temperature dependence of InAs nanostructures were studied by in situ reflection high-energy electron diffraction (RHEED) and ex situ atomic force microscopy. In the studied temperature range from 400 to 510 °C, the RHEED pattern changed from streaky to spotty after deposition of 6 ML of InAs, showing the formation of nanostructures. The quantum dots grown at lower growth temperatures (from 400 to 490 °C) showed bimodal dot size distribution. At higher growth temperatures, a drastic change from quantum dots to quantum dashes was observed. The quantum dashes have an asymmetric hutlike shape and align themselves along the [011¯] direction. The quantum dash width increases dramatically, whereas the average length and density increases slightly on further deposition of InAs. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119007
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