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  • 1
    Electronic Resource
    Electronic Resource
    Adhesion between Te-based alloy films and fluorocarbon sublayers during the ablative hole opening process (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 865-872 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Adhesion between thin Te-based alloy films and fluorocarbon polymer sublayers, prepared by sputtering or plasma polymerization, was investigated by observing the 1 μm-sized ablative hole opening process with a focused laser beam. Interpretations of the mechanisms for the change in energy required for the hole opening and pit geometry were based on the framework of studies of the ablative hole opening process for optical recording. Observations suggest that the molten material flow during the hole opening includes a ductile fracture and a viscous flow of the molten sublayer material as well as of active layer material. Adhesion acts as an energy barrier against the above mentioned flow of molten material during the hole opening process. Since the fluorocarbon films used in the present work had highly cross-linked structures, the adhesion was mainly dominated by the dynamic force of adhesion. Therefore, the hole opening process was mainly affected by the dynamic force of adhesion rather than the static force, which is dominated by the surface energy of the sublayer. There was a good correlation between the dynamic force of adhesion estimated by the peel-off strength and the concentrations of the -CF- and -C-CF- structures estimated from C1s spectra obtained by x-ray photoelectron spectroscopy. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359011
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  • 2
    Electronic Resource
    Electronic Resource
    Soft magnetic properties of nanocrystalline FeRuGaSi-Hf alloy films and head characteristics for the embedded thin film tape head : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5907-5909 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Hf-added FeRuGaSi alloy film has an amorphous structure in the as-deposited state and becomes nanocrystalline after annealing. Due to this structure change from crystalline to amorphous by the addition of Hf, soft magnetic degradation of the film deposited on the slant grooved substrate, which is necessary for the sophisticated embedded thin film (ETF) head structure, is greatly suppressed and the undesirable film stress is relieved. The FeRuGaSi-Hf alloy film has higher resistivity and permeability at high frequencies than those of sendust film, and the read/write characteristics of this alloy film show better performance than sendust film. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362168
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  • 3
    Electronic Resource
    Electronic Resource
    Effects of deviatoric stress and radial strain on the shock-induced diffusionless transformation in boron nitride (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 527-529 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The phase transformation of graphitelike BN (h-BN) to wurtzite-type high-pressure BN (w-BN) was investigated through shock-recovery techniques under quasihydrodynamic and nonhydrodynamic shock compressions and under various strain conditions. The experimental results support a diffusionless mechanism, by which the hydrodynamic c-axis compression of h-BN is preferred. This mechanism is topologically considered based on the relationship of crystal structures between h-BN and w-BN. The presence of deviatoric stress and strain depresses the yield of w-BN and the development of w-BN (100) relative to (002). © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364132
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  • 4
    Electronic Resource
    Electronic Resource
    Changes in soft magnetic properties of Fe multilayered films due to lattice mismatches between Fe and intermediate layers (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4338-4344 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fe multilayered films with various intermediate layers are formed. Their magnetic properties and film structures are examined to understand the mechanism originating soft magnetic properties. The soft magnetic properties change with the lattice mismatches between Fe and intermediate layers, showing low coercive force and high relative permeability at lattice mismatches from 0.4 to 1.2%. It is thought that the lattice mismatches above 0.4% decrease Fe crystallite size and improve soft magnetic properties. Although Fe crystallite size is small at the lattice mismatches above 1.2%, the soft magnetic properties are poor. This is because the large lattice mismatch increases internal stress and magnetic anisotropy energy. This report indicates that the good soft magnetic properties are obtained when both Fe crystallite size and internal stress are small.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343981
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  • 5
    Electronic Resource
    Electronic Resource
    Band lineup for a GaInP/GaAs heterojunction measured by a high-gain Npn heterojunction bipolar transistor grown by metalorganic chemical vapor deposition (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4898-4902 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A GaInP(N)/GaAs( p) heterojunction bipolar transistor was fabricated by metalorganic chemical vapor deposition (MOCVD) for the first time. The common-emitter current gain exceeded 200 at a current density around 10 A/cm2 and the offset voltage was as small as 50 mV. Thermionic emission theory indicates that the conduction-band discontinuity (ΔEc) at GaInP/GaAs heterointerface is as small as 30 meV at room temperature and this value was more than 160 meV smaller than 0.19–0.22 eV obtained by the C-V profile method. The band-gap energy for MOCVD-grown GaInP was 60 meV smaller than the intrinsic band-gap energy (1.91 eV), but this value is too small to explain the difference between the present ΔEc value and the previously reported ΔEc value.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343205
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  • 6
    Electronic Resource
    Electronic Resource
    Surface-acoustic-wave properties of MgO-doped LiNbO3 single crystals measured by line-focus-beam acoustic microscopy (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 7863-7868 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Basic acoustic properties of five MgO-doped LiNbO3 rectangular parallelpiped specimens, having X-, Y-, and Z-cut planes, with different MgO dopant concentrations ranging from 0 to 13 mol % are investigated by line-focus-beam acoustic microscopy. The investigation is conducted to characterize the optical-use MgO:LiNbO3 crystals and wafers and to establish large-diameter crystal growth conditions. Leaky-surface-acoustic-wave (LSAW) velocities are measured on each crystalline plane of each specimen as a function of the wave propagation direction and are compared with the measured chemical composition ratios of Mg/Li/Nb, densities, and lattice constants. It is shown that, as the dopant concentrations increase in the experimental composition region, the LSAW velocities increase almost linearly for all the surfaces and all the propagation directions. The LSAW velocities are linearly proportional to the lattice constants, but inversely proportional to the densities. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370597
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  • 7
    Electronic Resource
    Electronic Resource
    Design and fabrication of thin-film heads based on a dry process (invited) (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 4157-4162 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High performance thin-film heads for disk drive systems have been developed based on a dry process. Heads were computer simulated and optimal design was carried out. Relationships among Ni-Fe composition, domain structure and wiggle of the read-write waveform were obtained. Based on these results, optimum Ni-Fe composition range was determined. A planarization procedure for an inbedding insulator of the conductor coil was developed. Also narrow track patterning and gap depth controlling procedures were developed. Using these procedures, a two-layered seventeen-turn thin-film head for a large capacity disk drive system (23 Mb/in.2) has been developed. The head exhibited excellent read-write characteristics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338514
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  • 8
    Electronic Resource
    Electronic Resource
    Magnetic and magneto-optic properties of Tb-FeCo-Al films (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 3903-3905 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of an addition of Al on the corrosion resistance of amorphous 100-nm-thick Tb-Fe coevaporated films has been studied. From measurements of the change of the optical transmittance, it is seen that the growth of pin holes is reduced considerably. However, the addition of Al also results in a decrease of the magnetic and magneto-optic properties of the Tb-Fe films such as the Curie temperature, the Kerr rotation, the perpendicular anisotropy, and the coercivity. These problems, however, are recovered easily by replacing part of the Fe by Co. This replacement also contributes to the improvement of the corrosion resistance. It has been shown that Tb-Fe-Co-Al films have a much better corrosion resistance than Tb-Fe or Tb-Fe-Co films, while having the same good magnetic and magneto-optic properties.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334910
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  • 9
    Electronic Resource
    Electronic Resource
    Properties of Fe-Al-Si-N thin films prepared by N2 reactive sputtering (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 3844-3846 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have attempted to prepare Fe-Al-Si-N films by rf magnetron sputtering in an atmosphere of Ar+N2, employing an Fe-Al-Si target, and investigated the influence of nitrogen on the properties of sendust alloys. Some properties, such as Vicker's hardness and electrical resistivity of the films, were improved in the presence of nitrogen. In addition, the Fe-Al-Si-N films interestingly show superior magnetic properties to those of sendust films. For example, effective permeability at 1 MHz of the film, prepared under the selected conditions, reached a maximum of approximately 4000, exceeding 2200 of our standard sendust film. The microstructure of Fe-Al-Si-N and Fe-Al-Si films has been observed using scanning electron microscopy. As a result, we have found a difference in microstructure between the nitrogen-containing films and the regular films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338616
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  • 10
    Electronic Resource
    Electronic Resource
    Ionic conductivity and mobility in network polymers from poly(propylene oxide) containing lithium perchlorate (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 123-128 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ionic conductivity σ and mobility μ in the amorphous network polymers from poly(propylene oxide) (PPO) containing lithium perchlorate (LiClO4) at the concentration of [LiClO4]/[PO unit]=0.042 and 0.076 were investigated by means of complex impedance and time-of-flight methods. The σ values of the PPO–LiClO4 complexes reached 10−5 S cm−1 at 70 °C. The temperature dependence of σ deviated from a single Arrhenius behavior above a critical temperature (−1 °C and 11 °C) which approximately corresponded to the glass transition temperature Tg. The μ values were relatively high and changed from 10−6 to 10−5 cm2 V−1 s−1 in the temperature range of 40–100 °C. The Nernst–Einstein equation correlated μ with the ionic diffusion coefficient D. The Williams–Landel–Ferry equation with C1(approximately-equal-to)5 and C2(approximately-equal-to)30–50 held with a temperature dependence of D in the order of 10−8–10−7 cm2 s−1. The change in the number of ionic carriers n with temperature obeyed the Arrhenius equation with the activation energy of 0.26 and 0.34 eV. The degree of dissociation for LiClO4 in the PPO networks was 1–6%, and the dissociation was facilitated in the low LiClO4 concentration complex. The temperature dependence of σ above Tg was interpreted quantitatively in terms of n and μ.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335386
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