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  • 1
    Electronic Resource
    Electronic Resource
    In Situ Measurement of Stress during Deposition of Boron Nitride Films (2000)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 347-349 (May 2000), p. 156-160 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/05/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.347-349.156.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Infrared Analysis of Boron Nitride Thin Films (1998)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 287-288 (Aug. 1998), p. 269-270 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/03/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.287-288.269.pdf
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  • 3
    Electronic Resource
    Electronic Resource
    Statistical evidence for remnants of the primordial code in the acceptor stem of prokaryotic transfer RNA (1992)
    Springer
    Journal of molecular evolution 34 (1992), S. 471-477 
    Details
    ISSN: 1432-1432
    Keywords: Transfer RNA ; Acceptor helix stem ; Primordial code ; Statistics
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Summary The specificity of interaction of amino acids with triplets in the acceptor helix stem of tRNA was investigated by means of a statistical analysis of 1400 tRNA sequences. The imprint of a prototypic genetic code at position 3–5 of the acceptor helix was detected, but only for those major amino acids, glycine, alanine, aspartic acid, and valine, that are formed by spark discharges of simple gases in the laboratory. Although remnants of the code at position 3–5 are typical for tRNAs of archaebacteria, eubacteria, and chloroplasts, eukaryotes do not seem to contain this code, and mitochondria take up an intermediary position. A duplication mechanism for the transposition of the original 3–5 code toward its present position in the anticodon stern of tRNA is proposed. From this viewpoint, the mode of evolution of mRNA and functional ribosomes becomes more understandable.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00160461
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  • 4
    Electronic Resource
    Electronic Resource
    Tribological properties of chromium implanted silicon nitride ceramics correlated with microstructure (1997)
    Springer
    Applied physics 65 (1997), S. 281-286 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 81.40; 61.80; 62
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: 3 N4 ceramic after chromium implantation were investigated for the dependence on implantation energy between 200 keV and 3 MeV at a fixed fluence of 1017 ions/cm2. The wear of the modified material is reduced for a load of 2 N independent of ion energy accompanied by a slight increase of the friction coefficient. At higher loads only high-energy implantations result in improved wear behaviour. Structural investigations show the absence of any new phases formed by ion implantation. All energies result in an amorphous layer. For lower energies this amorphous layer reaches up to the surface whereas at higher energies it is covered by still-crystalline but damaged material. The observed wear behaviour can be explained with the amorphization of the near surface region and the stress generated by the volume swelling of the amorphous layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050579
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  • 5
    Electronic Resource
    Electronic Resource
    Structure of Laser-Deposited Fe/Al Multilayers (1998)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 287-288 (Aug. 1998), p. 455-458 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/03/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.287-288.455.pdf
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  • 6
    Electronic Resource
    Electronic Resource
    Absolute density determination of CH radicals in a methane plasma (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 971-973 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Laser-induced fluorescence was applied at the B–X transition of the CH radical to measure absolute densities of the CH radicals in an electron cyclotron resonance methane plasma. The absolute experimental uncertainty is only about 30% due to a new calibration procedure. The CH density correlates well with optical emission from the CH A–X and B–X transitions over a wide pressure range. Experimental results are in satisfactory agreement with predictions from a model based on rate equations for the electron-induced dissociation and ionization of the parent methane gas. This model also includes the interaction of the plasma species with the surrounding walls and the particle transport due to pumping.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110949
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  • 7
    Electronic Resource
    Electronic Resource
    Running waveguide discharge for inner coating of metal tubes (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3401-3403 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A plasma-enhanced chemical vapor deposition process by means of the so-called running discharge has been developed. Amorphous hydrogenated carbon (C:H) films were deposited over a length of 2.5 m on the inner wall of an assembled waveguide system. The average deposition rate from a running discharge in methane was 0.27 A(ring)/s. An increase of the average deposition rate to 2.6 A(ring)/s was achieved using acetylene as process gas, while the H/C ratio in the C:H films remains nearly constant at one. The breakdown of a discharge in the metallic waveguide has been studied in argon plasmas depending on magnetic field, microwave power, and gas pressure. A sharp transition between a magnetically enhanced localized discharge and a running discharge was observed at increasing pressure in the range of some Pascal at a microwave power of 100 W. The running velocity (∼104 m/s) of the plasma package increases with increasing microwave power and increasing gas pressure. This plasma behavior has been further investigated by means of the power balance and plasma modeling in methane.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111291
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  • 8
    Electronic Resource
    Electronic Resource
    Influence of the ion energy on the growth and structure of thin hydrocarbon films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1354-1361 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Noncrystalline hydrocarbon films were deposited from methane plasmas in an electron-cyclotron-resonance plasma reactor. The films were characterized by infrared spectroscopy and high-energy ion-beam analysis. Film properties were investigated as a function of the energy of ions impinging on the surface of the growing film. The ion energy was varied by applying a dc bias to the sample in the range from 30 to 200 eV. The ion energy was measured with a retarding field analyzer under identical experimental conditions. An abrupt change was found in the sp3/sp2 ratio in the energy interval from 80 to 120 eV. Other film properties such as the refractive index, density, and hydrogen-to-carbon ratio exhibit a more or less monotonic dependence on the ion energy. The results are compared with published data on hydrocarbon films. An analytical model was developed to describe the energy dependence of the hydrogen fraction in the films. It is based on the assumption that displacement of hydrogen atoms is the dominating mechanism that controls the hydrogen fraction in hydrocarbon films. The results are also discussed on the basis of the fully constrained network model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354892
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  • 9
    Electronic Resource
    Electronic Resource
    A combined plasma-surface model for the deposition of C:H films from a methane plasma (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7718-7727 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The deposition of C:H layers by an electron-cyclotron-resonance plasma from methane was investigated. C:H was deposited at a methane pressure of 1.6 Pa and a substrate temperature between room temperature and 700 K. The film composition, morphology, and structure were investigated by high-energy ion beam analysis and scanning electron microscopy. A combined plasma-surface model for thin-film deposition is proposed, which includes the electron-induced dissociation of methane in the plasma and a growth model. The dominant reactions for film growth are the adsorption of the radical CH3, the direct incorporation of the ions, and the etching reactions with atomic hydrogen from the plasma. A consistent description for the deposition of hydrocarbon layers emerges. It compares favorably with measurements on the temperature dependence of the film growth and the influence of variable gas flow through the reactor on the growth rate and the film morphology.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356603
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  • 10
    Electronic Resource
    Electronic Resource
    Low-temperature dynamic depth profile measurements of implanted deuterium in nickel: Precipitation of nickel deuteride (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3169-3177 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of the retention of deuterium in polycrystalline nickel were obtained at 193 and 223 K through elastic-recoil detection using a 2.6-MeV 4He beam. The depth profiles so obtained show striking differences with their counterparts measured at higher temperatures. Although the profiles are homogeneous at implanted fluences lower than 3×1018 D+ cm−2, they present a large peak centered slightly deeper than the implantation range at higher fluences. Additional features develop as one further implants. The large peak is associated with the buildup of nickel deuteride. A one-dimensional computer model is developed which partly reproduces the features of the measured depth profiles.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346391
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