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  • 1
    Electronic Resource
    Electronic Resource
    Evaluation of Silicon Sheet Film Growth and Wafer Processing via Structural, Chemical and Electrical Diagnostics (2003)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 95-96 (Sept. 2003), p. 211-216 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/26/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.95-96.211.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    The oxidation of gallium nitride epilayers in dry oxygen (2000)
    Springer
    Applied physics 71 (2000), S. 191-194 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 81.60; 61.10
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. The oxidation of GaN epilayers in dry oxygen has been investigated. The GaN epilayers, about 1 μm thick, were grown on (0001) sapphire substrates by rapid thermal process/low pressure metalorganic chemical vapor deposition. Bulk θ-2θ X-ray diffraction (XRD) data showed that the slight oxidation of GaN began to occur at 800 °C for 6 h. The oxide was identified as the monoclinic β-Ga2O3. The GaN epilayers were completely oxidized at 1050 °C for 4 h or at 1100 °C for 1 h. For all samples, the strongest oxide’s peak is (11-3), and (30-6) followed. There is a rapid oxidation process in the initial stage of oxidation, and a relatively slow process followed when the temperature was over 1000 °C. The oxidation of two stages was limited by the rate of an interfacial reaction mechanism and by the diffusion mechanism, respectively. When the temperature reaches 1100 °C, the oxidation rate is very fast, which is considered as the results of the GaN decomposition at high temperature under atmosphere. The oxide layers were also observed by a scanning electron microscope, which shows a rough oxide surface and an expansion of the volume of 40%. The photoluminescence (PL) seriously influenced by the oxidation is also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050052
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  • 3
    Electronic Resource
    Electronic Resource
    Computation of large systems with an economic basis set: Ab initio calculations of silicon oxide clusters (2001)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 114 (2001), S. 5531-5536 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Silicon oxide plays an important role in many technological areas. Extensive ab initio calculations for related systems are thus desired but are limited due to the requirement of a huge computation resource. We show here that an economic basis set can be used to determine reliable atomic and electronic structures of the silicon oxide system. Binding energies in a single-point energy calculation using a standard higher-level basis set on the geometric structures optimized with the economic basis set found reasonable agreement with reported ones of high-level calculations. The approach has enabled the computation of silicon oxide clusters as large as 16 atoms being performed with considerably high accuracy using a medium level of computation resources. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1351883
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  • 4
    Electronic Resource
    Electronic Resource
    The electronic structures and properties of Alq3 and NPB molecules in organic light emitting devices: Decompositions of density of states (2000)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 112 (2000), S. 8614-8620 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A decomposition treatment of density of states in combination with PM3 molecular orbital calculations was used to reveal the fingerprints of electronic structures of two prototypical electroluminescent molecules, tris(8-hydroxy-quinoline)aluminum (Alq3) and N,N′-bis(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB). High convenience and accuracy of such a treatment were found for these large organic molecules in the determinations of (1) the distribution of important molecular orbitals such as the highest occupied orbital and the lowest unoccupied orbital; (2) the contribution to valence and conduction bands as well as gap states from constituent atoms, and thus the attribution of ultraviolet photoemission spectrum; (3) the sites and properties of reaction and excitation of a molecule; and (4) the localization property of electronic states. In particular, this study indicates that Alq3 is most possibly attacked by other atoms at the oxygen atoms while the reaction site for NPB is at the nitrogen atom. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.481462
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  • 5
    Electronic Resource
    Electronic Resource
    Magneto-optical characteristics of SiN/GdFe films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3744-3747 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magneto-optical and optical properties of GdFe single layer films, which are covered with a thin Si3N4 layer, were studied in the visible wavelength region. A Kerr rotation peak and a reflectivity drop were observed near 4.1 eV in GdFe alloyed films and attributed to the Gd element. Compared with the single thick GdFe film, the Kerr effect of SiN/GdFe bilayers was enhanced, due to the optical interference between Si3N4 and GdFe. The Kerr rotation of GdFe films showed a nonlinear function of the compositions in the whole measured wavelength range. Magneto-optical measurements directly evidence the spin–flip in the GdFe films as the Gd content increased from 20.7 to 24.2 at. %, which showed advantages over conventional magnetometry. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1336562
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  • 6
    Electronic Resource
    Electronic Resource
    Dielectric relaxation and steady-state leakage in low-temperature sputtered (Ba, Sr)TiO3 thin films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2309-2313 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dielectric relaxation and steady-state leakage currents were studied over a range of bias voltages for Pt-electroded capacitors in which the 50-nm-thick (Ba, Sr)TiO3 dielectric layer was sputter deposited at 480 °C. A pronounced polarity dependence in the current–voltage characteristic of the capacitors was observed. Dielectric relaxation in the films showed a Curie–von Schweidler time dependence (J=J0t−n) for intervals of 3–200 s duration after application of a voltage step. The relaxation current density was found to depend linearly on electric field for fields up to 700 kV/cm and nonlinearly at higher fields. In addition to the Curie–von Schweidler relaxation currents, a time-dependent leakage current was detected under high voltage bias conditions. An empirical model developed to describe leakage currents in these films is presented. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1325378
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  • 7
    Electronic Resource
    Electronic Resource
    Ultrahigh-pressure metamorphism in the forbidden zone: the Xugou garnet peridotite, Sulu terrane, eastern China (2003)
    Oxford, UK : Blackwell Science Inc
    Journal of metamorphic geology 21 (2003), S. 0 
    Details
    ISSN: 1525-1314
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences
    Notes: The Xugou garnet peridotite body of the southern Sulu ultrahigh-pressure (UHP) terrane is enclosed in felsic gneiss, bounded by faults, and consists of harzburgite and lenses of garnet clinopyroxenite and eclogite. The peridotite is composed of variable amounts of olivine (Fo91), enstatite (En92−93), garnet (Alm20−23Prp53−58Knr6−9Grs12−18), diopside and rare chromite. The ultramafic protolith has a depleted residual mantle composition, indicated by a high-Mg number, very low CaO, Al2O3 and total REE contents compared to primary mantle and other Sulu peridotites. Most garnet (Prp44−58) clinopyroxenites are foliated. Except for rare kyanite-bearing eclogitic bands, most eclogites contain a simple assemblage of garnet (Alm29−34Prp32−50Grs15−39) + omphacite (Jd24−36) + minor rutile. Clinopyroxenite and eclogite exhibit LREE-depleted and LREE-enriched patterns, respectively, but both have flat HREE patterns. Normalized La, Sm and Yb contents indicate that both eclogite and garnet clinopyroxenite formed by high-pressure crystal accumulation (+ variable trapped melt) from melts resulting from two-stage partial melting of a mantle source.Recrystallized textures and P–T estimates of 780–870 °C, 5–7 GPa and a metamorphic age of 231 ± 11 Ma indicate that both mafic and ultramafic protoliths experienced Triassic UHP metamorphism in the P–T forbidden zone with an extremely low thermal gradient (〈 5 °C km−1), and multistage retrograde recrystallization during exhumation. Develop of prehnite veins in clinopyroxenite, eclogite, felsic blocks and country rock gneiss, and replacements of eclogitic minerals by prehnite, albite, white mica, and K-feldspar indicate low-temperature metasomatism.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1525-1314.2003.00462.x
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  • 8
    Electronic Resource
    Electronic Resource
    Structure and representations on the quantum supergroup OSPq(2|2n) (2000)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 41 (2000), S. 6639-6656 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: The structure and representations of the quantum supergroup OSPq(2|2n) are studied systematically. The algebra of functions on the quantum supergroup, which specifies the quantum supergroup itself, is taken to be the superalgebra generated by the matrix elements of the vector representation of the quantized universal superalgebra Uq(osp(2|2n)). It is shown that the algebra of functions is dense in the full dual Uq(osp(2|2n))* of Uq(osp(2|2n)) and possesses a Hopf superalgebra structure. The left integral and right integral on the quantum supergroup are discussed. Induced representations are developed using the noncommutative geometry of quantum homogeneous supervector bundles, and a geometric realization of irreducible representations is obtained. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1286881
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  • 9
    Electronic Resource
    Electronic Resource
    Quantum enveloping superalgebras and link invariants (2002)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 43 (2002), S. 2029-2048 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: Corresponding to each finite dimensional simple basic classical Lie superalgebra, a new quantum enveloping superalgebra is introduced, which has the structure of a braided quasi-Hopf superalgebra. In the case of osp(1|2n), this quantum enveloping superalgebra is shown to be isomorphic to the standard Drinfeld–Jimbo quantum superalgebra Uq(osp(1|2n)) as braided quasi Hopf superalgebras. The new quantum enveloping superalgebras are applied to construct link invariants, from which Vassiliev invariants can be readily extracted. This, in particular, provides a useful construction for the Vassiliev invariants associated with Uq(osp(1|2n)). © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1436564
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  • 10
    Electronic Resource
    Electronic Resource
    Giant magneto-optical Kerr effect enhancement in layered CoMn/Si structures (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6788-6790 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For sputtered Co57Mn43/Si film samples with different ferromagnetic thickness, the spectra of the complex magneto-optical polar Kerr rotation and optical constants were ex-situ measured. For 5 nm-thick Co57Mn43 film, the Kerr rotation around 4.3 eV was enhanced by a factor of about 10 times with lower loss of the signal intensity as compared to the thick film. Numerical calculations show that the enhancement effect is attributed to an interplay between optical properties of Co57Mn43 and substrate Si that has a strong interband transition (E2) near 4.3 eV. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372842
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