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  • 1
    Electronic Resource
    Electronic Resource
    Density-of-states effective mass and scattering parameter measurements by transport phenomena in thin films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 462-466 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A novel machine has been developed to measure transport coefficients in the temperature range of 50–350 K of thin films deposited on electrically insulating substrates. The measured coefficients—resistivity, Hall, Seebeck, and Nernst—are applied to solutions of the Boltzmann transport equation to give information about the film's density-of-states effective mass, the Fermi energy level, and an energy-dependent scattering parameter. The machine is designed to eliminate or compensate for simultaneously occurring transport phenomena that would interfere with the desired measured quantity, while allowing for all four coefficients to be measured on the same sample. An average density-of-states effective mass value of 0.29±0.04me was measured on the transparent conductive oxide, cadmium stannate (CTO), over a carrier concentration range of 2–7×1020 cm−3. This effective mass value matched previous results obtained by optical and thermoelectric modeling. The measured scattering parameter indicates that neutral impurities or a mixture of scattering mechanisms may inhibit the transport of carriers in CTO. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150224
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  • 2
    Electronic Resource
    Electronic Resource
    Magnetic properties (Communication arising) Parasitic ferromagnetism in a hexaboride? (2002)
    [s.l.] : Nature Publishing Group
    Nature 420 (2002), S. 144-144 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Young et al. reply The results of Matsubayashi et al. on nominally stoichiometric, CaB6 sintered powders arrive at a conclusion concerning our study on ferromagnetism in this and related materials that differs in several ways from the conclusions of ongoing ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/420144a
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  • 3
    Electronic Resource
    Electronic Resource
    An auroral flare at Jupiter (2001)
    [s.l.] : Macmillian Magazines Ltd.
    Nature 410 (2001), S. 787-789 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Jupiter's aurora is the most powerful in the Solar System. It is powered largely by energy extracted from planetary rotation, although there seems also to be a contribution from the solar wind. This contrasts with Earth's aurora, which is generated through the interaction of the solar wind with ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/35071018
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  • 4
    Electronic Resource
    Electronic Resource
    Strong variation of average ion energy in oscillation frequency of sheath potential (2000)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 7 (2000), S. 766-769 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In a modern plasma etching device, the plasma sheath potential is usually superposed by an externally driven oscillating voltage to enhance and control the bombarding ion energy. A collisionless particle simulation is used to study the variation of average kinetic energy 〈K〉(νrf) of bombarding ions as a function of a wide range of sheath oscillation frequency νrf (0.1νpi≤νrf≤10νpi, where νpi is the ion plasma frequency). It is found that a resonance phenomenon between the ion transit motion and the sheath oscillation can yield a strongly peaked enhancement of 〈K〉(νrf) near νrf(similar, equals)0.5νpi. Ion species with different mass show the peaks at different νrf. The relative importance of different ion molecules in an ion-enhanced etching process will be sensitive to νrf. This phenomenon may allow a reduction of the undesirable capacitive coupling by optimizing νrf to yield an enhanced 〈K〉 of desired ion species at low applied voltages. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.873870
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  • 5
    Electronic Resource
    Electronic Resource
    Thermoelectric properties of Ag3AuTe2 (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5221-5224 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electronic structure calculations predict Ag3AuTe2 to be a small-band-gap semiconductor. Polycrystalline samples of the pure and doped materials have been synthesized, and the physical properties are reported. Thermoelectric power measurements indicate that pure Ag3AuTe2 is a p-type material with a very large room-temperature Seebeck coefficient of 530 μV/K. The thermal conductivity is very low, and at room temperature, is lower than that of the best thermoelectrics. The transport properties were found to be very sensitive to chemical doping and nonstoichiometry. Although samples made with excess Ag resulted in improved thermoelectric performance at higher temperatures (〉500 K), the large resistivity of these materials makes them noncompetitive with state-of-the-art thermoelectrics. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1316057
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  • 6
    Electronic Resource
    Electronic Resource
    Thermoelectric properties of pure and doped FeMSb (M=V,Nb) (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 317-321 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermoelectric properties of the pure and doped half-Heusler compounds FeVSb and FeNbSb are reported. The electrical resistivities are between 0.2 and 20 mΩ cm at room temperature. Thermoelectric power measurements indicate that FeVSb is an n-type material with moderate Seebeck coefficients near −70 μV/K at 300 K. The thermal conductivity at room temperature is large, approximately 0.1 W/cm K, and increases with decreasing temperature. Chemical substitutions, which have a dramatic effect on the transport properties, were performed in an effort to enhance the thermoelectric performance. Band-structure calculations are presented for the pure materials. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371863
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  • 7
    Electronic Resource
    Electronic Resource
    Structural characterization of zinc stannate thin films (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1464-1471 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline thin films of Zn2SnO4 were deposited by rf magnetron sputtering onto glass substrates. Films were characterized by θ–2θ x-ray diffraction and by 119Sn conversion electron Mössbauer spectroscopy. The films were randomly oriented in a cubic spinel structure. Comparison of x-ray diffraction peak intensities with structure-factor-calculated peak intensities confirmed that the films were in an inverse spinel configuration. Mössbauer studies detected two distinct Sn4+ octahedral sites. These distinct sites may be induced by distortions in the lattice associated with equally distinct Zn2+ octahedral sites. A model is suggested to explain that the relatively low electron mobility of Zn2SnO4 may be associated with disorder on the cation octahedral sites. This may disrupt transport between edge-sharing d10s0 electronically configured cations. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1429793
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  • 8
    Electronic Resource
    Electronic Resource
    Time-resolved optical microscopy of a laser-based forward transfer process (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3169-3171 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Matrix-assisted pulsed laser evaporation direct write was investigated by ultrahigh speed optical microscopy. A composite barium–zirconium titanate/α-terpineol layer was irradiated by 355 nm laser pulses with a 150 ns pulse width, and it was observed that material removal does not begin until after the end of the pulse (t〉200 ns) and continues for 1 μs after the irradiation. The desorption plume consists of micron-size particles moving with a velocity of ∼0.2 km/s. The slow response is attributed to the combination of particle absorbers and highly viscous fluid. The ability to form continuous, pinhole-free coatings is due to slow coalescence of the particles. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1372200
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  • 9
    Electronic Resource
    Electronic Resource
    Anisotropic electrical spin injection in ferromagnetic semiconductor heterostructures (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1598-1600 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A fourteen-fold anisotropy in the spin transport efficiency parallel and perpendicular to the charge transport is observed in a vertically biased (Ga, Mn)As-based spin-polarized light emitting diode. The spin polarization is determined by measuring the polarization of electroluminescence from an (In, Ga)As quantum well placed a distance d (20–420 nm) below the p-type ferromagnetic (Ga, Mn)As contact. In addition, a monotonic increase (from 0.5% to 7%) in the polarization is measured as d decreases for collection parallel to the growth direction, while the in-plane polarization from the perpendicular direction (∼0.5%) remains unchanged. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1458535
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  • 10
    Electronic Resource
    Electronic Resource
    Ultraviolet light-induced impairment of goldfish embryo development and evidence for photorepair mechanisms (2004)
    Oxford, UK; Malden, USA : Blackwell Science Ltd
    Journal of fish biology 64 (2004), S. 0 
    Details
    ISSN: 1095-8649
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: Goldfish Carassius auratus embryos were subjected to artificial ultraviolet-B (UVB) radiation (280–320 nm) at various times during development to evaluate the effects on production of anatomically normal larvae. The UVB radiation used in these experiments included a higher proportion of shorter wavelengths compared to the natural spectrum. The development of embryos exposed to UVB for 2 or 4 h at 26 h post-fertilization was severely impaired whereas similar exposures at 50 or 74 h post-fertilization had no effect. A 2 h exposure to UVB commencing at 2 h post-fertilization did not adversely affect embryonic development whereas a 4 h exposure to a lower dose did. At 50 h post-fertilization, when embryos were normally resistant to UVB, denial of access to visible light and UVA before, during and after exposure to UVB caused impairment of development. Analysis of DNA fragment length after incubation with an endonuclease suggested that UVB damage at 50 h was caused by formation of pyrimidine dimers. This study demonstrated that the sensitivity of goldfish embryos to UVB varied during development and that resistance to UVB in later developmental stages included a photorepair mechanism.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.0022-1112.2004.00388.x
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