ISSN:
1432-0630
Keywords:
PACS: 85.40.Vb; 85.30.Tv; 85.40.Hp; 85.30.De
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract. Oxynitrides prepared by double nitridation in nitric oxide (NO) and nitrous oxide (N2O) are compared to the one with a single NO nitridation. Based on various hot-carrier stresses, harder oxide/Si interface, less charge trapping and generation of electron/hole traps in oxide, and larger charge-to-breakdown are observed for the doubly-nitrided gate dielectrics than the singly-nitrided one. By analyzing the nitrogen profiles in these oxynitrides, it is revealed that the involved mechanisms lie in the smaller distance of peak nitrogen concentration from the oxide/Si interface and the higher nitrogen content near the oxide/Si interface in the doubly-nitrided oxynitrides.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/s003390050020
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