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  • 1
    Electronic Resource
    Electronic Resource
    Applications of Shape Memory Alloys in Japan (2000)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 327-328 (Jan. 2000), p. 17-22 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/04/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.327-328.17.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Two-dimensional numerical equilibria of field-reversed configuration in the strong mirror field (2000)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 7 (2000), S. 4062-4069 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two-dimensional numerical equilibria of field-reversed configuration (FRC) plasmas in the strong mirror field applied externally are studied by means of the Grad–Shafranov equation. Appropriate choice of the pressure function is necessary to obtain a thin and elongated equilibrium, as observed in the FRC Injection Experiment (FIX) [H. Himura et al., Phys. Plasmas 2, 191 (1995)]. To solve the Grad–Shafranov equation, the finite difference method is used, applying the boundary-fitted curvilinear coordinates and the attracted grids near the separatrix. The outstanding feature of the equilibria is the presence of a narrow and sharp spike in the toroidal current profile near the separatrix. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1289513
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  • 3
    Electronic Resource
    Electronic Resource
    Experimental evidence of improved confinement in a high-beta field-reversed configuration plasma by neutral beam injection (2000)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 7 (2000), S. 2294-2297 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The first experimental result of high power (14 kV, 23 A) neutral beam (NB) injection into a high-beta field-reversed configuration (FRC) is demonstrated. The result makes it clear that the NB injection improves the plasma performance, increasing the configuration lifetime more than 200% in comparison with the ordinary FRC under similar conditions. A novel NB injection system is presented for application to FRC plasmas. A set of three concave electrodes for beam extraction is used to focus the beam enabling to pass through a narrow port. The target of beam injection is a large bore FRC plasma contained in a mirror field with a mirror ratio of 2–9. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.874121
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  • 4
    Electronic Resource
    Electronic Resource
    Kerr microscopy observations of magnetization process in microfabricated ferromagnetic wires (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5618-5620 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetization process in microfabricated NiFe wires was observed using a Kerr microscope. Magnetic wires were made from a 20-nm-thick NiFe film by using lift-off techniques. Their width W and length L were designed as W=0.5, 1.0 and 2.0 μm and L=50 μm, respectively. One end of the wire was connected to a square shaped head with a side of 2W, which is designed to act as a domain wall source. In each wire, necks with different width of 0.2W, 0.6W, and 0.8W were introduced as artificial pinning sites of a domain wall. By using an oil-immersion lens (NA=1.3) and a Hg lamp, magnetization reversals in very narrow wires, as narrow as 0.5 μm, were clearly observed. It is confirmed that domain wall penetration, pinning, depinning, and also the direction of wall motion are controllable using square shaped head and necks with optimized width. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372469
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  • 5
    Electronic Resource
    Electronic Resource
    Domain structure and magnetotransport in epitaxial colossal magnetoresistance thin films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6746-6748 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Our studies of compressively strained La0.7Sr0.3MnO7 (LSMO) thin films reveal the importance of domain structure and strain effects in the magnetization reversal and magnetotransport. Normal and grazing incidence x-ray diffraction indicate that the compressive strain on these LSMO thin films on (100) LaAlO3 is not completely relaxed up to thicknesses on the order of 1000 Å. The effect of the compressive strain is evident in the shape of the magnetization loops and the magnetotransport measurements at various temperatures. Although the domain wall contribution to the magnetoresistance is significantly larger than that predicted from a simple double exchange picture, the contribution is a small fraction of the measured magnetoresistance. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372828
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  • 6
    Electronic Resource
    Electronic Resource
    Thickness dependent binary behavior of elongated single-domain cobalt nanostructures (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 404-409 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the switching behavior of single-domain cobalt nanostructures using a combination of magnetometry and magnetic force microscopy. The elongated nanostructures are 80×140 nm wide, and range in thickness from 14 to 30 nm. Structures thinner than 20 nm form a single-domain binary system featuring two preferred orientations of the magnetization. An additional double-domain configuration becomes increasingly favorable as the thickness approaches 30 nm. The onset of this double-domain state agrees with previously reported numerical calculations. We also present a quantitative study of interparticle coupling in tightly packed arrays. The local dipolar field increases the squareness of the hysteresis loop as the interparticle separation decreases below 400 nm. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371875
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  • 7
    Electronic Resource
    Electronic Resource
    Formation of the GaN conversion layer in GaP (111)B wafers using ammonia gas (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1562-1564 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface layer of GaP(111)B wafers is converted into α-GaN phase (wurtzite) by annealing at 900 °C for 6 h under NH3 gas flow. The converted layer extends to ∼10 μm from the surface. X-ray diffraction analysis shows that the conversion layer is a highly c-axis oriented GaN, supported by the appearance of an E2 phonon mode originated from the c face of α-GaN observed by a Raman scattering method. The photoluminescence spectra at 20 K consist of the zero-phonon-line transition at 3.34 eV followed by two phonon replicas observed 100 and 180 meV lower in energy. The possible origin of the emission is discussed. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1456953
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  • 8
    Electronic Resource
    Electronic Resource
    Integrated platform for silicon photonic crystal devices at near-infrared wavelengths (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1514-1516 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate an integrated fiber-photonic crystal system with a uniform band gap of around 1550 nm with insertion loss as low as 3.5 dB. One-dimensional photonic crystals fabricated on this platform exhibit a higher-order photonic band gap with over 30 dB suppression of transmission from 1400 to 1700 nm that is consistent with simulation. These results may lead to true integration of photonic crystals into optical fiber communication systems as optical switches and routers. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1457525
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  • 9
    Electronic Resource
    Electronic Resource
    Quantum-well effect in magnetic tunnel junctions with ultrathin single-crystal Fe(100) electrodes (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 4381-4383 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We studied the tunnel spectra of magnetic tunnel junctions with a single-crystal ultrathin Fe(100) electrode. The tunnel spectra show oscillations of the differential conductivity and the differential tunnel magnetoresistance. The positions of the maxima of the oscillations move systematically with the change in the Fe(100) electrode's thickness, indicating that the oscillations originate from the quantum-well states in the ultrathin Fe(100) electrode. This effect provides us with an opportunity to create voltage-controlled spin functional devices. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1424068
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  • 10
    Electronic Resource
    Electronic Resource
    Changes in the turnover of Rubisco and levels of mRNAs of rbcL and rbcS in rice leaves from emergence to senescence (2001)
    Oxford, UK : Blackwell Science Ltd
    Plant, cell & environment 24 (2001), S. 0 
    Details
    ISSN: 1365-3040
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: Changes in the amount of ribulose 1,5-bisphosphate carboxylase/oxygenase (Rubisco; EC 4·1·1·39) synthesized and degraded and the levels of rbcL and rbcS mRNAs were examined in the eighth leaf blades of rice from emergence to senescence. Synthesis of Rubisco was very active during leaf expansion, became quite low at the time of full expansion and then declined further during senescence. The changes in the levels of rbcL and rbcS mRNAs co-ordinated approximately with those in the amount of Rubisco synthesized. Thus, it is suggested that the amount of Rubisco synthesized is determined primarily by the levels of rbcL and rbcS mRNAs during the life span of the leaves. Degradation of Rubisco started just before the time of full expansion and became far more active than its synthesis during senescence. Since the synthesis of Rubisco during senescence scarcely contributed to its amount, it can be concluded that the degradation of Rubisco is the major determinant for the amount of Rubisco in senescent leaves. The decline in the level of rbcL mRNA occurred much earlier in the developmental stage and proceeded at a much faster rate than that of rbcL DNA, indicating that the level of rbcL DNA is not a major determinant for the level of rbcL mRNA in senescent leaves of rice.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.0016-8025.2001.00789.x
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