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  • 1
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    Small-molecule inhibitors of HIV-1 entry block receptor-induced conformational changes in the viral envelope glycoproteins (2004)
    National Academy of Sciences
    Details
    Publication Date: 2004-03-29
    Print ISSN: 0027-8424
    Electronic ISSN: 1091-6490
    Topics: Biology , Medicine , Natural Sciences in General
    Published by National Academy of Sciences
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  • 2
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    Fractional quantum hall effect in organic molecular semiconductors (2000)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 2000-07-06
    Description: High-quality crystals of the organic molecular semiconductors tetracene and pentacene were used to prepare metal-insulator-semiconductor (MIS) structures exhibiting hole and electron mobilities exceeding 10(4) square centimeters per volt per second. The carrier concentration in the channel region of these ambipolar field-effect devices was controlled by the applied gate voltage. Well-defined Shubnikov-de Haas oscillations and quantized Hall plateaus were observed for two-dimensional carrier densities in the range of 10(11) per square centimeter. Fractional quantum Hall states were observed in tetracene crystals at temperatures as high as approximately 2 kelvin.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Schon, J H -- Kloc, C -- Batlogg, B -- New York, N.Y. -- Science. 2000 Jun 30;288(5475):2339-40.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, NJ 07974, USA.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/10875912" target="_blank"〉PubMed〈/a〉
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
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  • 3
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    An organic solid state injection laser (2000)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 2000-08-01
    Description: We report on electrically driven amplified spontaneous emission and lasing in tetracene single crystals using field-effect electrodes for efficient electron and hole injection. For laser action, feedback is provided by reflections at the cleaved edges of the crystal resulting in a Fabry-Perot resonator. Increasing the injected current density above a certain threshold value results in the decreasing of the spectral width of the emission from 120 millielectron volts to less than 1 millielectron volt because of gain narrowing and eventually laser action. High electron and hole mobilities as well as balanced charge carrier injection lead to improved exciton generation in these gate-controlled devices. Moreover, the effect of charge-induced absorption is substantially reduced in high-quality single crystals compared with amorphous organic materials.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Schon, J H -- Kloc, C -- Dodabalapur, A -- Batlogg, B -- New York, N.Y. -- Science. 2000 Jul 28;289(5479):599-601.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, NJ 07974-0636, USA.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/10915617" target="_blank"〉PubMed〈/a〉
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
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  • 4
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    Field-effect modulation of the conductance of single molecules (2001)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 2001-11-10
    Description: Field-effect transistors based on two-component self-assembled monolayers of conjugated and insulating molecules were prepared; the conductance through them can be varied by more than three orders of magnitude by changing the applied gate bias. With very small ratios of conjugated to insulating molecules in the two-component monolayer, devices with only a few "electrically active" molecules can be achieved. At low temperatures, the peak channel conductance is quantized in units of 2e2/h (where e is the electron charge and h is Planck's constant). This behavior is indicative of transistor action in single molecules. On the basis of such single-molecule transistors, inverter circuits with gain are demonstrated.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Schon, J H -- Meng, H -- Bao, Z -- New York, N.Y. -- Science. 2001 Dec 7;294(5549):2138-40. Epub 2001 Nov 8.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, NJ 07974-0636, USA. hendrik@lucent.com〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/11701891" target="_blank"〉PubMed〈/a〉
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
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  • 5
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    Ambipolar pentacene field-effect transistors and inverters (2000)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 2000-02-11
    Description: Organic field-effect transistors based on pentacene single crystals, prepared with an amorphous aluminum oxide gate insulator, are capable of ambipolar operation and can be used for the preparation of complementary inverter circuits. The field-effect mobilities of carriers in these transistors increase from 2.7 and 1.7 square centimeters per volt per second at room temperature up to 1200 and 320 square centimeters per volt per second at low temperatures for hole and electron transport, respectively, following a power-law dependence. The possible simplification of the fabrication process of complementary logic circuits with these transistors, together with the high carrier mobilities, may be seen as another step toward applications of plastic electronics.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Schon, J H -- Berg, S -- Kloc, C -- Batlogg, B -- New York, N.Y. -- Science. 2000 Feb 11;287(5455):1022-3.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Bell Laboratories, Lucent Technologies, Mountain Avenue, Murray Hill, NJ 07974, USA.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/10669410" target="_blank"〉PubMed〈/a〉
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
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  • 6
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    A light-emitting field-effect transistor (2000)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 2000-11-04
    Description: We report here on the structure and operating characteristics of an ambipolar light-emitting field-effect transistor based on single crystals of the organic semiconductor alpha-sexithiophene. Electrons and holes are injected from the source and drain electrodes, respectively. Their concentrations are controlled by the applied gate and drain-source voltages. Excitons are generated, leading to radiative recombination. Moreover, above a remarkably low threshold current, coherent light is emitted through amplified spontaneous emission. Hence, this three-terminal device is the basis of a very promising architecture for electrically driven laser action in organic semiconductors.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Schon, J H -- Dodabalapur, A -- Kloc, C -- Batlogg, B -- New York, N.Y. -- Science. 2000 Nov 3;290(5493):963-6.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Lucent Technologies, Bell Laboratories, Murray Hill, NJ 07974, USA. hendrik@lucent.com〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/11062124" target="_blank"〉PubMed〈/a〉
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
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  • 7
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    A superconducting field-effect switch (2000)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 2000-04-28
    Description: We report here on a novel realization of a field-effect device that allows switching between insulating and superconducting states, which is the widest possible variation of electrical properties of a material. We chose C(60) as the active material because of its low surface state density and observed superconductivity in alkali metal-doped C(60). We induced three electrons per C(60) molecule in the topmost molecular layer of a crystal with the field-effect device, creating a superconducting switch operating up to 11 kelvin. An insulator was thereby transformed into a superconductor. This technique offers new opportunities for the study of superconductivity as a function of carrier concentration.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Schon, J H -- Kloc, C -- Haddon, R C -- Batlogg, B -- New York, N.Y. -- Science. 2000 Apr 28;288(5466):656-8.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, NJ 07974, USA. Departments of Chemistry and Physics and Advanced Carbon Materials Center, University of Kentucky, Lexington, KY 40506, USA.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/10784445" target="_blank"〉PubMed〈/a〉
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
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  • 8
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    Josephson junctions with tunable weak links (2001)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 2001-04-17
    Description: The electrical properties of organic molecular crystals, such as polyacenes or C60, can be tuned from insulating to superconducting by application of an electric field. By structuring the gate electrode of such a field-effect switch, the charge carrier density, and therefore also the superfluid density, can be modulated. Hence, weak links that behave like Josephson junctions can be fabricated between two superconducting regions. The coupling between the superconducting regions can be tuned and controlled over a wide range by the applied gate bias. Such devices might be used in superconducting circuits, and they are a useful scientific tool to study superconducting material parameters, such as the superconducting gap, as a function of carrier concentration or transition temperature.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Schon, J H -- Kloc, C -- Hwang, H Y -- Batlogg, B -- New York, N.Y. -- Science. 2001 Apr 13;292(5515):252-4.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, NJ 07974-0636, USA. hendrik@lucent.com〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/11303093" target="_blank"〉PubMed〈/a〉
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
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  • 9
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    High-temperature superconductivity in lattice-expanded C60 (2001)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 2001-09-05
    Description: C60 single crystals have been intercalated with CHCl3 and CHBr3 in order to expand the lattice. High densities of electrons and holes have been induced by gate doping in a field-effect transistor geometry. At low temperatures, the material turns superconducting with a maximum transition temperature of 117 K in hole-doped C60/CHBr3. The increasing spacing between the C60 molecules follows the general trend of alkali metal-doped C60 and suggests routes to even higher transition temperatures.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Schon, J H -- Kloc, C -- Batlogg, B -- New York, N.Y. -- Science. 2001 Sep 28;293(5539):2432-4. Epub 2001 Aug 30.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, NJ 07974, USA. hendrik@lucent.com〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/11533443" target="_blank"〉PubMed〈/a〉
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
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  • 10
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    Field-induced superconductivity in a spin-ladder cuprate (2001)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 2001-09-29
    Description: We report on the modulation of the transport properties of thin films, grown by molecular beam epitaxy, of the spin-ladder compound [CaCu2O3]4, using the field effect in a gated structure. At high hole-doping levels, superconductivity is induced in the nominally insulating ladder material without the use of high-pressure or chemical substitution. The observation of superconductivity is in agreement with the theoretical prediction that holes doped into spin ladders could pair and possibly superconduct.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Schon, J H -- Dorget, M -- Beuran, F C -- Xu, X Z -- Arushanov, E -- Lagues, M -- Deville Cavellin, C -- New York, N.Y. -- Science. 2001 Sep 28;293(5539):2430-2.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, NJ 07974-0636, USA. j.hendrix@ratskrone.de〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/11577230" target="_blank"〉PubMed〈/a〉
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
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