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  • 1
    Electronic Resource
    Electronic Resource
    Temperature Dependent Performance of GaN Schottky Diode Rectifiers (2000)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 338-342 (May 2000), p. 1631-1634 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/05/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.338-342.1631.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Electrical effects of plasma enhanced chemical vapor deposition of SiNx on GaAs Schottky rectifiers (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4800-4804 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diode ideality factor, reverse breakdown voltage, and forward current characteristic were used to measure the effect on electric performance of GaAs rectifiers deposited with thin films of SiNx. Over a broad range of deposition conditions there were minimal changes (〈10%) in breakdown voltage and the cause was hydrogen passivation of Si dopants in the GaAs. Ion-induced damage did not appear to play a significant role in the results. The ideality factors and forward leakage currents were essentially unchanged by the SiNx deposition indicating that the plasma exposure did not create defects states around the periphery of the Schottky contact. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1410323
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  • 3
    Electronic Resource
    Electronic Resource
    Pt Schottky contacts to n-(Ga,Mn)N (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 658-660 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Schottky barrier height of Pt contacts on n-(Ga,Mn)N (n∼3.5×1017 cm−3) thin films was obtained from current–voltage measurements as a function of temperature. The resulting values ranged from 0.82±0.04 eV at 25 °C to 0.79±0.06 eV at 100 °C with saturation current densities of 4.28×10−8 A cm−2 (25 °C) to 8.42×10−5 A cm−2 (100 °C), respectively. The barrier height at room temperature obtained from an activation energy plot was 0.91±0.06 eV. The reverse current magnitude was larger than predicted by thermionic emission alone, just as in n-GaN grown in a similar fashion on Al2O3 substrates. The measured barrier height for Pt on n-(Ga,Mn)N is lower than for the value reported on n-GaN(1.08 eV). © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1496130
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  • 4
    Electronic Resource
    Electronic Resource
    Inversion behavior in Sc2O3/GaN gated diodes (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 373-375 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The capacitance–voltage (C–V) characteristics of Sc2O3/p-GaN gate-controlled diodes show unusual hook shapes due to the charging of surface states. From the drain–voltage dependence of the C–V curves, the total surface state density was estimated to be ∼8.2×1012 cm−2 for diodes undergoing an implant activation anneal at 950 °C. The accumulation capacitance showed a significant dependence on measurement frequency and is suggested to result from the presence of an interfacial dielectric between the Sc2O3 and GaN. The Si-implanted n+ regions in the gated diode structure are effective in providing a source of inversion charge. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1492852
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  • 5
    Electronic Resource
    Electronic Resource
    Al composition dependence of breakdown voltage in AlxGa1−xN Schottky rectifiers (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1767-1769 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Planar geometry, lateral Schottky rectifiers were fabricated on high resistivity AlxGa1−xN (x=0–0.25) epitaxial layers grown on sapphire substrates. The reverse breakdown voltages of unpassivated devices increased with Al composition, varying from 2.3 kV for GaN to 4.3 kV for Al0.25Ga0.75N. The reverse current–voltage (I–V) characteristics showed classical Shockley–Read–Hall recombination as the dominant mechanism, with I∝V0.5. The reverse current density in all diodes was in the range 5–10×10−6 A cm−2 at 2 kV. The use of p+ guard rings was effective in preventing premature edge breakdown and with optimum ring width increased VB from 2.3 to 3.1 kV in GaN diodes. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126161
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  • 6
    Electronic Resource
    Electronic Resource
    Vertical and lateral GaN rectifiers on free-standing GaN substrates (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1555-1557 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Edge-terminated Schottky rectifiers fabricated on quasibulk GaN substrates showed a strong dependence of reverse breakdown voltage VB on contact dimension and on rectifier geometry (lateral versus vertical). For small diameter (75 μm) Schottky contacts, VB measured in the vertical geometry was ∼700 V, with an on-state resistance (RON) of 3 mΩ cm2, producing a figure-of-merit VB2/RON of 162.8 MW cm−2. Measured in the lateral geometry, these same rectifiers had VB of ∼250 V, RON of 1.7 mΩ cm2 and figure-of-merit 36.5 MW cm−2. The forward turn-on voltage (VF) was ∼1.8 V (defined at a current density of 100 A cm−2), producing VB/VF ratios of 139–389. In very large diameter (∼5 mm) rectifiers, VB dropped to ∼6 V, but forward currents up to 500 mA were obtained in dc measurements. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1400771
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  • 7
    Electronic Resource
    Electronic Resource
    Lateral AlxGa1−xN power rectifiers with 9.7 kV reverse breakdown voltage (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 823-825 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: AlxGa1−xN (x=0–0.25) Schottky rectifiers were fabricated in a lateral geometry employing p+-implanted guard rings and rectifying contact overlap onto an SiO2 passivation layer. The reverse breakdown voltage (VB) increased with the spacing between Schottky and ohmic metal contacts, reaching 9700 V for Al0.25Ga0.75N and 6350 V for GaN, respectively, for 100 μm gap spacing. Assuming lateral depletion, these values correspond to breakdown field strengths of ≤9.67×105 V cm−1, which is roughly a factor of 20 lower than the theoretical maximum in bulk GaN. The figure of merit (VB)2/RON, where RON is the on-state resistance, was in the range 94–268 MW cm−2 for all the devices. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1346622
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  • 8
    Electronic Resource
    Electronic Resource
    Direct-current characteristics of pnp AlGaN/GaN heterojunction bipolar transistors (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2943-2945 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: AlGaN/GaN pnp heterojunction bipolar transistors were fabricated using a low-damage dry-etch process, and the dc characteristics measured up to 250 °C. In the common–base mode, the collector current was approximately equal to the emitter current under all conditions. Although not optimized for power operations, the devices were tested up to power densities of ∼50 kW cm−2. The dc current gain was in the range 20–25 at room temperature. The pnp configuration avoids the problem of high base sheet resistance encountered with npn-AlGaN/GaN devices. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126524
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  • 9
    Electronic Resource
    Electronic Resource
    Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1661-1663 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Unpassivated AlGaN/GaN high-electron-mobility transistors show significant gate lag effects due to the presence of surface states in the region between the gate and drain contact. Low-temperature (100 °C) layers of MgO or Sc2O3 deposited by plasma-assisted molecular-beam epitaxy are shown to effectively mitigate the collapse in drain current through passivation of the surface traps. These dielectrics may have advantages over the more conventional SiNX passivation in terms of long-term device stability. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1455692
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  • 10
    Electronic Resource
    Electronic Resource
    Influence of 60Co γ-rays on dc performance of AlGaN/GaN high electron mobility transistors (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 604-606 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: AlGaN/GaN high electron mobility transistors (HEMTs) with different gate length and widths were irradiated with 60Co γ-rays to doses up to 600 Mrad. Little measurable change in dc performance of the devices was observed for doses lower than 300 Mrad. At the maximum dose employed, the forward gate current was significantly decreased, with an accompanying increase in reverse breakdown voltage. This is consistent with a decrease in effective carrier density in the channel as a result of the introduction of deep electron trapping states. The threshold voltage shifted to more negative voltages as a result of the irradiation, while the magnitude of the drain–source current was relatively unaffected. This is consistent with a strong increase of trap density in the material. The magnitude of the decrease in transconductance of the AlGaN/GaN HEMTs is roughly comparable to the decrease in dc current gain observed in InGaP/GaAs heterojunction bipolar transistors irradiated under similar conditions. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1445809
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