ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract A model of completely depleted layer was used to derive analytical expressions for equilibrium distributions of shallow-level impurity, electric field, and potential in the near-surface region of a semiconductor. The results of calculation were used to estimate the variation in the parameters of a finite-size structure. It was found that, in the approximation used, it was possible to reduce the concentration of electrically active defects by several times for semiconductor layers ∼1 µm thick.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1188004
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