Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
79 (2001), S. 1864-1866
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The triple-barrier coupled quantum dots have been fabricated in individual single-wall carbon nanotubes by depositing a narrow SiO2 layer in between metallic source–drain contacts. The current–voltage characteristics at 4.2 K with different gate voltages before the SiO2 deposition have indicated the formation of a single quantum dot. After the SiO2 deposition, the irregular Coulomb diamonds and the negative differential conductance have been observed, which suggests the formation of coupled quantum dots. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1403295
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