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  • 1
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    Semiconductors. Toward functional spintronics (2001)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 2001-02-28
    Description: 〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Ohno, H -- New York, N.Y. -- Science. 2001 Feb 2;291(5505):840-1.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University, Sendai, Japan.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/11225634" target="_blank"〉PubMed〈/a〉
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
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  • 2
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    Zener model description of ferromagnetism in zinc-blende magnetic semiconductors (2000)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 2000-02-11
    Description: Ferromagnetism in manganese compound semiconductors not only opens prospects for tailoring magnetic and spin-related phenomena in semiconductors with a precision specific to III-V compounds but also addresses a question about the origin of the magnetic interactions that lead to a Curie temperature (T(C)) as high as 110 K for a manganese concentration of just 5%. Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1-)(x)Mn(x)Te and is used to predict materials with T(C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Dietl -- Ohno -- Matsukura -- Cibert -- Ferrand -- New York, N.Y. -- Science. 2000 Feb 11;287(5455):1019-22.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Sendai 980-8577, Japan. Institute of Physics and College of Science, Polish Academy of Sciences, al. Lotnikow 32/46, PL-02668 Warsaw, Poland. Laboratoire de Spectr.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/10669409" target="_blank"〉PubMed〈/a〉
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
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  • 3
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    Electrical manipulation of magnetization reversal in a ferromagnetic semiconductor (2003)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 2003-07-12
    Description: We report electrical manipulation of magnetization processes in a ferromagnetic semiconductor, in which low-density carriers are responsible for the ferromagnetic interaction. The coercive force HC at which magnetization reversal occurs can be manipulated by modifying the carrier density through application of electric fields in a gated structure. Electrically assisted magnetization reversal, as well as electrical demagnetization, has been demonstrated through the effect. This electrical manipulation offers a functionality not previously accessible in magnetic materials and may become useful for reversing magnetization of nanoscale bits for ultrahigh-density information storage.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Chiba, D -- Yamanouchi, M -- Matsukura, F -- Ohno, H -- New York, N.Y. -- Science. 2003 Aug 15;301(5635):943-5. Epub 2003 Jul 10.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/12855816" target="_blank"〉PubMed〈/a〉
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
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  • 4
    Electronic Resource
    Electronic Resource
    Current-induced domain-wall switching in a ferromagnetic semiconductor structure (2004)
    [s.l.] : Macmillian Magazines Ltd.
    Nature 428 (2004), S. 539-542 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Magnetic information storage relies on external magnetic fields to encode logical bits through magnetization reversal. But because the magnetic fields needed to operate ultradense storage devices are too high to generate, magnetization reversal by electrical currents is attracting much interest ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/nature02441
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  • 5
    Electronic Resource
    Electronic Resource
    Electric-field control of ferromagnetism (2000)
    [s.l.] : Macmillian Magazines Ltd.
    Nature 408 (2000), S. 944-946 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] It is often assumed that it is not possible to alter the properties of magnetic materials once they have been prepared and put into use. For example, although magnetic materials are used in information technology to store trillions of bits (in the form of magnetization directions established by ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/35050040
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  • 6
    Electronic Resource
    Electronic Resource
    Spin-dependent scattering in semiconducting ferromagnetic (Ga,Mn)As trilayer structures (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6436-6438 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spin-dependent scattering in ferromagnet/nonmagnet/ferromagnet (Ga,Mn)As/(Al,Ga)As/(Ga,Mn)As trilayer structures was studied. An increase of sheet resistance was observed when the magnetizations of the two ferromagnetic (Ga,Mn)As layers were aligned anti-parallel, which was realized by the different coercivity of the two (Ga,Mn)As layers with different compositions. This is the first demonstration of spin-dependent scattering in magnetic multilayer structures made of semiconductor-materials alone. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372730
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  • 7
    Electronic Resource
    Electronic Resource
    Growth and properties of (Ga,Mn)As films with high Mn concentration (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7024-7026 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: (Ga, Mn)As films with high nominal Mn concentration (0〈x〈0.55) are grown by low temperature molecular beam epitaxy (LT-MBE), growth temperature Ts=180 °C. Reflection high energy electron diffraction patterns indicate epitaxial growth of (Ga, Mn)As for x〈0.1, whereas they show spotty patterns for x〉0.1, which turn to polycrystalline features when x〉0.3. X-ray diffraction shows the formation of MnAs together with the growth of (Ga, Mn)As. The lattice constant of the layers suggests that (Ga, Mn)As with high Mn composition as high as 17% can be grown by LT-MBE. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1357841
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  • 8
    Electronic Resource
    Electronic Resource
    Ultrafast deposition of microcrystalline Si by thermal plasma chemical vapor deposition (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 8311-8315 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This research is an attempt to apply thermal plasma chemical vapor deposition for the ultrafast deposition of Si films for solar cells. The improvement of stability, controllability, and cleanliness of the process enabled the deposition of μc-Si films at the ultrafast rate of over 1000 nm/s. Moreover, a minimum defect density of 7.2×1016 cm−3 was achieved. Monte-Carlo simulation and step coverage analysis suggested that the precursor is an approximately 1 nm cluster with a sticking probability of about 0.6. The success of this research may change the established concepts of Si deposition technology. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1370365
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  • 9
    Electronic Resource
    Electronic Resource
    Magnetotransport properties of (Ga, Mn)Sb (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6442-6444 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The preparation of dilute alloy of GaSb and Mn, (Ga, Mn)Sb, with a few percent of Mn by molecular beam epitaxy and its magnetotransport properties are reported. Magnetotransport measurements show a pronounced anomalous Hall effect and negative magnetoresistance below 50 K. The results suggest that Mn atoms are incorporated in the GaSb host, resulting in the formation of the ferromagnetic semiconductor, (Ga, Mn)Sb. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372732
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  • 10
    Electronic Resource
    Electronic Resource
    Room-temperature ferromagnetism in zincblende CrSb grown by molecular-beam epitaxy (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2776-2778 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of CrSb grown by solid-source molecular-beam epitaxy on GaAs, (Al, Ga)Sb, and GaSb are found to exhibit ferromagnetism. Reflection high-energy electron diffraction and high-resolution cross sectional transmission electron microscopy both indicate that the structure is zincblende. Temperature dependence of remanent magnetization shows that the ferromagnetic transition temperature is beyond 400 K. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1413732
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