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  • 2000-2004  (210)
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  • 1
    Publication Date: 2001-09-22
    Description: Comprehensive genomic analysis of the important human pathogen Staphylococcus aureus was achieved by a strategy involving antisense technology in a regulatable gene expression system. In addition to known essential genes, many genes of unknown or poorly defined biological function were identified. This methodology allowed gene function to be characterized in a comprehensive, defined set of conditionally growth-defective/lethal isogenic strains. Quantitative titration of the conditional growth effect was performed either in bacterial culture or in an animal model of infection. This genomic strategy offers an approach to the identification of staphylococcal gene products that could serve as targets for antibiotic discovery.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Ji, Y -- Zhang, B -- Van, S F -- Horn -- Warren, P -- Woodnutt, G -- Burnham, M K -- Rosenberg, M -- New York, N.Y. -- Science. 2001 Sep 21;293(5538):2266-9.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Department of Microbiology, Genetics Research, GlaxoSmithKline Pharmaceuticals Research and Development, Collegeville, PA 19426, USA. yinduo_ji-1@gsk.com〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/11567142" target="_blank"〉PubMed〈/a〉
    Keywords: Animals ; Cloning, Molecular ; Female ; *Gene Expression Regulation, Bacterial ; *Genes, Bacterial ; *Genes, Essential ; Genetic Vectors ; Mice ; Open Reading Frames ; Phenotype ; Pyelonephritis/microbiology ; *RNA, Antisense ; Staphylococcal Infections/microbiology ; Staphylococcus aureus/*genetics/growth & development/pathogenicity ; Transformation, Bacterial ; Virulence/genetics
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
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  • 2
    Publication Date: 2002-09-01
    Print ISSN: 0943-0105
    Electronic ISSN: 1432-0495
    Topics: Geosciences
    Published by Springer
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  • 3
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    PANGAEA
    In:  Supplement to: Zhang, B Z; Zhang, P X; Lowenstein, Tim K; Spencer, R J (1995): Time range of the great ice age of the last glacial stage and its related geological event of playa in the Qinghai-Xizang (Tibet) Plateau. (doi:cnki:ISSN:10017410.0.1995-03-000 not valid), Quaternary Sciences, 3, 192-201
    Publication Date: 2023-05-02
    Description: Fluid inclusions of protogenous halite, which were collected from two boreholes in the Charhan Salt Lake in the north part of the Qinghai-Xizang Plateau, werea nalyzed for their hydrogen and oxygen isotopes and for their Na, Mg etc. ions.On these grounds, the evolution of lake environment in this region during the last 50 000 years are discussed in this paper. The emphasis is to discuss the time range of extremely arid and cold climate at the last Glacial stage and the geological event of playa associated with such a climate.The guanidine hydrochloride method was used for measurement of hydrogen and oxygen stable isotopes. The measurement of Na, Mg etc. ions were achieved by determination of crystallization temperature of hydrohalite under microscope and then by calculation of chemical compositions of inclusion fluid using a thermodynamic model.The results obtained show that protogenous halite in the Charhan Lake area was formed in three different environment conditions: (1) In fluid inclusions of halite formed in the early period (50 000-30 000 a B. P. ), dD averages -14.9 per mil, d(18)O averages 8.37 per mil, and Mg(2+)ranges from 0.42 to 1.59 mol/L. Their plotting points fall on the right top part of the evaporation line of the present Charhan Lake area, indicating that the Lake water at that time had a higher concentration of brine, and the climate was hot and dry. (2) In fluid inclusions of halite formed in the middle period (30 000-15 000 a B. P.), SD average -66.0 per mil, d(18)O averages 1.00 pr mil, and Mg(2+) 1 mol/L. Their plotting points fall on the left low part of the evaporation line, indicating that the lake water at that time had a concentration of brine lower than that in the early period, and the environment was cold and dry. (3) In fluid inclusions of halite formed in the late period (15 000-present), dD averages 30.8 per mil, d(18)O averages 5.85 per mil, and Mg(2+) M 1 mol/L. Their plotting fall on the evaporation line, indicating that the climate environment at that time was warm and dry, almost the same as the present.The temperature variation of the last 50 000 years in the Charhan Lake area was calculated using the conversion equation proposed by Lorious et al. The time range of the Great ice age of the Last Glacial Stage is about 21 000-15 000 a B.P., which basically coincides with the time of a worldwide low sea level. The temperature in that period was below 0°C and 6-7°C lower than now. Because of lower temperatures, water supply to the lake area decreased rapidly and the concentration of lake water increased sharply. Therefore the Mg(2+) concentration in inclusion fluid reaches or closes to 2mol/L and the Mg/Na ratio varies within a very wide range. These show that the Charhan Lake at that time entered its playa stage. The Charhan Salt Lake is a typical one in the north part of the Qinghai-Xizang Plateau. It can be supposed that the extremely arid and cold climate of the Great Ice Age made most lakes in the north part of the Qinghai-Xizang Plateau enter their playa stage. This event is of importance for formation of salt resources.
    Keywords: AGE; Age, comment; Age, maximum/old; Age, minimum/young; Interpretation from literature (PKDB); Latitude of event; Longitude of event; Paleoclimate Database of the Quaternary; PKDB; PKDB286426; Precipitation, relative difference; Temperature, air; Temperature, relative difference
    Type: Dataset
    Format: text/tab-separated-values, 10 data points
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 4916-4918 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Study by time-resolved photoluminescence shows that two classes of quantum structures coexist in a ZnSe/CdSe/ZnSe heterostructure in which the CdSe coverage is less than the critical thickness. Excitons from class-A structures dominate the emission spectrum and exhibit temperature-independent decay times, demonstrating quantum-dot-like properties. On the other hand, excitonic transitions from class-B structures are characterized by decay times that depend linearly on temperature, indicating two-dimensional features. There is a sharp transition from class-A to class-B excitons as the emission energy goes from higher to lower energies across the emission band. © 2000 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 528-530 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the characteristics of InGaN multiple-quantum-well (MQW) green light-emitting diodes (LEDs) on Si (111) substrates. The MQW LEDs were grown on Si by metalorganic chemical vapor deposition using Al0.27Ga0.73N/AlN intermediate layers. The LED on Si showed an operating voltage of 7 V, a series resistance of 100 Ω, an optical output power of 20 μW, and a peak emission wavelength of 505 nm with a full width at half maximum of 33 nm at 20 mA drive current. The optical output power was half as compared to that of green LED on sapphire. The LED also exhibited a stable operation over 500 h under automatic current control (20 mA) condition at 27 °C. © 2002 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 407-409 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnO nanowires were mass produced using a physical vapor deposition approach. The ZnO nanowire monocrystallites have an average diameter around 60 nm and length up to a few micrometers. The unidirectional growth of the ZnO nanowires was controlled by the conventional vapor-liquid-solid mechanism. Intensive UV light emission peaked around 3.27 eV was observed at room temperature, which was assigned to emission from free exciton under low excitation intensity. The observed room temperature UV emission was ascribed to the decrease in structure defects as compared to bulk ZnO materials, and in particularly to the size effect in the ZnO wires. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2496-2498 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The (SiO2:Er/Si/SiO2:Er) nanometer sandwich structure, in which the thickness of the Si layer between the two SiO2:Er barriers was varied from 1.0 to 4.0 nm with an interval of 0.2 nm, was deposited on both n+-Si and p-Si substrates using the magnetron sputtering technique. Electroluminescence (EL) from the Au/(SiO2:Er/Si/SiO2:Er) nanometer sandwich /n+-Si diodes under reverse biases has been observed. The EL spectrum of each diode can be fitted by three Gaussian bands with peak energies of 0.757 eV (1.64 μm), 0.806 eV (1.54 μm), and 0.860 eV (1.44 μm), and full widths at half maximum of 0.052 eV, 0.045 eV, and 0.055 eV, respectively. The marked effect of the nanometer Si layer with suitable thickness on enhancing the EL from the Er3+ in the SiO2 layers has been demonstrated. Among the diodes with Si layers having various thicknesses, the intensities of the 1.64-, 1.54-, and 1.44-μm bands of the diode with a 1.6-nm Si layer attain maxima which are 22, 8, and 7 times larger than those of the control diode without any Si layer, respectively. © 2002 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1416-1418 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanometer SiO2/nanometer Si/nanometer SiO2 double-barrier (DB) structures, with Si layers having eleven different thicknesses from 2 to 4 nm, were deposited on n+–Si substrates using the magnetron sputtering technique. Strong electroluminescence (EL) from semitransparent Au film/DB/n+–Si structure was observed under reverse bias in a range of about 5–7 V. It is found that every EL spectrum of the structure can be decomposed into two Gaussian bands with peaks at around 1.85 and 2.25 eV, and their intensities and current swing synchronously with increasing nanometer Si layer thickness; the periodic length of swing is consistent with half of the de Broglie wavelength of the carriers. A comparison was carried out between EL from the Au/DB/n+–Si structure under reverse bias and that from the Au/DB/p–Si structure under forward bias reported previously. © 2000 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3953-3955 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structural and optical properties of ZnO films grown on R–Al2O3 substrates by atmospheric pressure chemical-vapor deposition were investigated using x-ray diffraction and photoluminescence. The (112¯0) plane of the ZnO film tilted 0.3° with respect to the (11¯02) plane of the substrate and rotated about 7° around the normal of the sample surface. Symmetric (112¯0) and asymmetric (202¯2) x-ray reflection on ZnO films with different thicknesses were carried out. Comparison with photoluminescence measurements allowed us to conclude that the optical properties of the ZnO films are predominately determined by the in-plane, rather than out-of-plane, structural features. © 2001 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2567-2569 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaN films were grown on sapphire and SiC substrates. The crystal qualities of GaN films were investigated by photoluminescence, atomic force microscopy, and electron-beam-induced current measurements, etc. It was found that the crystal quality of GaN on SiC is better than the one on sapphire. Ni/Au Schottky contacts were formed on the both samples. The electronic characteristics were obtained by current–voltage and capacitance–voltage measurements. Schottky diodes on sapphire substrate show breakdown voltage of −80 V. While for SiC substrate, the strong breakdown was not observed even at −100 V. The reverse leakage current of diodes based on SiC is over three orders of magnitude lower than that of sapphire substrate when the reverse voltage is above 50 V, which is due to the presence of low dislocation density and high thermal conductivity. © 2001 American Institute of Physics.
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