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  • 1
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    Unknown
    In:  Geophys. Res. Lett., Tulsa, 450 pp.; 2nd modified and expanded ed., Society of Exploration Geophysics, vol. 29, no. 17, pp. 846-855, pp. B02405, (ISSN: 1340-4202)
    Publication Date: 2002
    Description: Being situated in the immediate vicinity of the 1999 Chichi earthquake epicenter, 178 automatic-recording monitoring wells of the Choshui fan-delta provided a very valuable data set for testing whether the coseismic water-level changes in confined aquifers can be explained as a poroelastic response of well-aquifer systems to coseismic volumetric strain. This study demonstrates that the polarities of the observed coseismic water-level and river discharge changes are in good agreement with those of the static volumetric strain calculated by a dislocation model, using the well-constrained rupture model of the seismogenic Chelungpu fault. The puzzling "bull-eye" patterns formed by the equipotential lines of the coseismic water-level changes in the confined aquifers in the middle parts of the fan-delta represent pressure enhancement due to their being situated at the pinch-out ends of conglomeratic layers.
    Keywords: Earthquake ; China ; Seismology ; Fluids ; 7299 ; Seismology: ; General ; or ; miscellaneous ; 1899 ; Hydrology: ; General ; or ; miscellaneous ; 1829 ; Groundwater ; hydrology ; Chi-Chi
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  • 2
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    American Association for the Advancement of Science (AAAS)
    Publication Date: 2001-09-22
    Description: Double quantum dots provide an ideal model system for studying interactions between localized impurity spins. We report on the transport properties of a series-coupled double quantum dot as electrons are added one by one onto the dots. When the many-body molecular states are formed, we observe a splitting of the Kondo resonance peak in the differential conductance. This splitting reflects the energy difference between the bonding and antibonding states formed by the coherent superposition of the Kondo states of each dot. The occurrence of the Kondo resonance and its magnetic field dependence agree with a simple interpretation of the spin status of a double quantum dot.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Jeong, H -- Chang, A M -- Melloch, M R -- New York, N.Y. -- Science. 2001 Sep 21;293(5538):2221-3.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Department of Physics, Purdue University, West Lafayette, IN 47907, USA.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/11567130" target="_blank"〉PubMed〈/a〉
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
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  • 3
    Publication Date: 2004-02-07
    Description: A genetic interaction network containing approximately 1000 genes and approximately 4000 interactions was mapped by crossing mutations in 132 different query genes into a set of approximately 4700 viable gene yeast deletion mutants and scoring the double mutant progeny for fitness defects. Network connectivity was predictive of function because interactions often occurred among functionally related genes, and similar patterns of interactions tended to identify components of the same pathway. The genetic network exhibited dense local neighborhoods; therefore, the position of a gene on a partially mapped network is predictive of other genetic interactions. Because digenic interactions are common in yeast, similar networks may underlie the complex genetics associated with inherited phenotypes in other organisms.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Tong, Amy Hin Yan -- Lesage, Guillaume -- Bader, Gary D -- Ding, Huiming -- Xu, Hong -- Xin, Xiaofeng -- Young, James -- Berriz, Gabriel F -- Brost, Renee L -- Chang, Michael -- Chen, YiQun -- Cheng, Xin -- Chua, Gordon -- Friesen, Helena -- Goldberg, Debra S -- Haynes, Jennifer -- Humphries, Christine -- He, Grace -- Hussein, Shamiza -- Ke, Lizhu -- Krogan, Nevan -- Li, Zhijian -- Levinson, Joshua N -- Lu, Hong -- Menard, Patrice -- Munyana, Christella -- Parsons, Ainslie B -- Ryan, Owen -- Tonikian, Raffi -- Roberts, Tania -- Sdicu, Anne-Marie -- Shapiro, Jesse -- Sheikh, Bilal -- Suter, Bernhard -- Wong, Sharyl L -- Zhang, Lan V -- Zhu, Hongwei -- Burd, Christopher G -- Munro, Sean -- Sander, Chris -- Rine, Jasper -- Greenblatt, Jack -- Peter, Matthias -- Bretscher, Anthony -- Bell, Graham -- Roth, Frederick P -- Brown, Grant W -- Andrews, Brenda -- Bussey, Howard -- Boone, Charles -- GM39066/GM/NIGMS NIH HHS/ -- GM61221/GM/NIGMS NIH HHS/ -- New York, N.Y. -- Science. 2004 Feb 6;303(5659):808-13.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Banting and Best Department of Medical Research, University of Toronto, Toronto, ON, Canada M5G 1L6.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/14764870" target="_blank"〉PubMed〈/a〉
    Keywords: Amino Acid Sequence ; Computational Biology ; Cystic Fibrosis/genetics ; Gene Deletion ; Genes, Essential ; *Genes, Fungal ; Genetic Diseases, Inborn/genetics ; Genotype ; Humans ; Molecular Sequence Data ; Multifactorial Inheritance ; Mutation ; Phenotype ; Polymorphism, Genetic ; Retinitis Pigmentosa/genetics ; Saccharomyces cerevisiae/*genetics/*metabolism ; Saccharomyces cerevisiae Proteins/chemistry/genetics/*metabolism
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
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  • 4
    Publication Date: 2001-07-01
    Print ISSN: 0025-3162
    Electronic ISSN: 1432-1793
    Topics: Biology
    Published by Springer
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  • 5
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 114 (2001), S. 10196-10211 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Grain growth in a polystyrene–polyisoprene block copolymer melt is studied by time-resolved depolarized light scattering after a quiescent quench from the disordered to the ordered state. At shallow quench depths, classical nucleation and growth kinetics are observed. Grains comprising the equilibrated ordered phase nucleate and grow by consuming the surrounding disordered phase. In contrast, deep quenches result in the formation of disorganized grains with an average order parameter that is well below the equilibrium value. Small angle neutron scattering and rheological experiments were conducted to facilitate the interpretation of the light scattering data. We show that the nonequilibrium grain structure formed during deep quenches is due to extremely high nucleation density. Under these circumstances, the space required for the formation of equilibrated grains is unavailable. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 259-260 (Mar. 2004), p. 195-200 
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 471-472 (Dec. 2004), p. 353-357 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Scanning probe microscopy (SPM) has proved to be a powerful tool not only for imaging but also for nanofabrication. SPM-based nanofabrication comprises manipulation of atoms or molecules and SPM-based nanolithography. SPM-based nanolithography, referred to as scanning probe lithography (SPL) in this review, holds good promise for fabrication of nanometer-scale patterns as an emerging generic lithography technique that STM, AFM, and SNOM are directly or otherwise used to pattern nanometer-scale features under appropriate conditions. Patterning methods including mechanical SPL, electrical SPL, thermal SPL, and optical SPL, are described in terms of SPL mechanisms. The newly developed variations of the above-mentioned SPL methods such as dip pen nanolithography, nanoshaving and nanografting, replacement lithography, constructive nanolithography, nanojet lithography, and electrostatic lithography, are also illustrated respectively. Analyses of prospective application of these SPL methods are presented finally
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 471-472 (Dec. 2004), p. 63-66 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: STAVAX ESR(S-136)is a type of high stainless steel, used in precision mould widely . It has fine anticorrosion, polishing-alike, wearable,good process capacity and quench stability. To obtain the smooth surface of STAVAX ESR, the material removal mechanism in the paper is discussed. The experiment is processed on the ultra-precision plane polishing machine (Nanopoli-100). The experiment processes are as follows. Rough lapping and Ultra-precision lapping: the material of lapping pads is cast iron. #1000Al203 (10wt%) abrasive powders are used inrough lapping. Finally, surface roughness is 62nm. In ultra-precision lapping, abrasive powders are for #4000Al203(10wt%). Removal rate is 1nm with linear velocity 8.6m/min, pressure 3.65MPa. After 4000 rounds, surface roughness is 35nm.Ultra precision polishing: The super smooth surfaces of STAVAX ESR(S-136)with 5nm roughness have been obtained by adopting SiO2(〉 30wt%) slurry and soft tin polisher in the experiment
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 471-472 (Dec. 2004), p. 473-476 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Potassium Titanium Oxide Phosphate (KTP) is a new nonlinear frequency-conversion crystal. It has chemical stability, high nonlinear coefficient, high damage threshold, easily-polished surface, and a broad transparency range. It is be used in solid green laser with medium and low power widely. The requirement for surface roughness is less than 1nm.In this paper, the removal rate and surface roughness are discussed with different velocity, pressure and size of abrasive powder. In order to satisfy the requirement, new polishing techniques with ultra-precision plane polishing machine (Nanopoli-100), and fine AL2O3, SiO2 powders are proposed in this study. The final surface roughness of the KTP is less than 1nm.The machining process and characteristics are also indicated
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 259-260 (Mar. 2004), p. 466-470 
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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