Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
77 (2000), S. 990-992
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Electron populations induced by spontaneous and piezoelectric polarization in semiconductor heterostructures can be estimated simply by using elementary electrostatic theory. The method is illustrated for the AlGaN/GaN system in which the AlGaN barrier is either undoped, or doped n type, and the effect of a GaN overlayer is described. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1288817
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