Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
87 (2000), S. 7999-8004
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A radio frequency probe has been used to monitor changes in charge-carrier recombination centers at a SiO2/Si interface by following the steady-state photogenerated carrier concentration in the silicon. A silicon surface covered with ∼200 Å of thermal oxide was exposed to gaseous molecular hydrogen at temperatures between 135 and 300 °C. The reaction was found to occur with a nonexponential rate law that could be described by a cluster of rate constants governed by a Gaussian distribution of activation energies. At high temperatures, the dominant reaction was found to be that of "Pb" centers with a rate law that is consistent with that previously obtained by electron paramagnetic resonance. At low temperatures the reaction is dominated by the passivation of a carrier recombination center with a much lower activation energy. This new species makes up about 25% of the total recombination center concentration at the Si/SiO2 interface. Almost 20% of the recombination centers could not be passivated by H2. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.373486
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