Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
78 (2001), S. 2688-2690
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Transmission electron microscopy is used to investigate GaN layers grown on Si(111) substrates by plasma-assisted molecular-beam epitaxy. These layers were grown on top of different AlN buffer layers. Multiple-beam dark-field techniques applied to both cross-sectional and planar-view samples show the presence of inversion domains. These domains grow directly from the interface with the Si(111) substrate. Such observations are related, as in the case of growth on sapphire, to the symmetry difference between wurtzite and diamond. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1368373
Permalink
|
Location |
Call Number |
Expected |
Availability |