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  • 1
    Electronic Resource
    Electronic Resource
    Evaluation of small-angle scattering data of charged particles using the generalized indirect Fourier transformation technique (2000)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 113 (2000), S. 9733-9740 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Small-angle x-ray and neutron scattering are widely used techniques to study the structure of colloidal particles in the size range up to 100 nm. The indirect Fourier transformation technique is well established to obtain model free real space information, but the interpretation of the results is limited to cases where particle interaction can be neglected. The extended generalized indirect Fourier transform (GIFT) allows one to separate inter- and intraparticle effects, but needs models for the particle interaction. We present the application of three different models for the calculation of interaction effects of charged particles, represented by the structure factor. With this extension, useful real space information can be obtained by the GIFT method for solutions with volume fractions up to about 0.3 without any assumption for the shape of the particles. Only the interaction effects need a model assumption, and the parameters determined from this model can give some additional information. Simulations show that it is impossible to determine charge and ionic strength simultaneously. There exists another ambiguity between the parameter sets for charge, radius, and volume fraction, but we show how this problem can be overcome in most cases. The practical applicability of the method is demonstrated by means of the micellar system CTAB in different concentrations from 1% up to 20% and with varying amounts of added salt to screen the charges and change the particle shape. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1321770
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  • 2
    Electronic Resource
    Electronic Resource
    Controlled n-type doping of a molecular organic semiconductor: Naphthalenetetracarboxylic dianhydride (NTCDA) doped with bis(ethylenedithio)-tetrathiafulvalene (BEDT-TTF) (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4340-4343 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a study of controlled n-type doping in molecular organic semiconductors: Naphthalenetetracarboxylic dianhydride is doped by cosublimation with the donor molecule bis(ethylenedithio)-tetrathiafulvalene. Electrical parameters are deduced from temperaturedependent measurements of the conductivity and the thermopower for various dopant concentrations. The results are compared to the predictions of a standard model commonly used for crystalline semiconductors. The Fermi level shifts towards the transport level, the conductivity is increased, and the mobility decreases with the doping ratio. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373413
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  • 3
    Electronic Resource
    Electronic Resource
    Release isentropes of overdriven plastic-bonded explosive PBX-9501 (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6287-6293 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Continuous release isentropes for the plastic-bonded explosive PBX-9501 are obtained from velocity interferometer system for any reflector measurements at a high-explosive/LiF interface. Forward calculations from a tabular representation of the isentropes to the measured u(t) data at the interface are iterated to yield isentropes that give agreement with the data. Curves for the isentropes and for the isentropic gamma, γS=−(∂lnP/∂lnV)S are presented. Because isentropes from different overdriven states differ, a crude estimate of the Grüneisen parameter is obtained. An overall representation of the data is achieved with this Grüneisen parameter and a single isentrope through the Chapman–Jouguet state. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1323513
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  • 4
    Electronic Resource
    Electronic Resource
    A simple measurement of the absolute internal quantum efficiency of thin organic films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 7802-7804 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article, we present a simple method for the determination of the absolute internal quantum efficiency of thin organic dye layers. The basic idea is the comparison of the luminescence of the film with the reflection of a white diffusive reflectance standard measured at one angle with a simple spectrofluorometer. The method is compared to the procedure of de Mello [J. C. de Mello, H. F. Wittmann and R. H. Friend, Adv. Mater. 9, 230 (1997)], which uses an integrating sphere. As examples, the quantum yields of films of the two perylene derivatives N,N′-dimethylperylene-3,4:9,10-dicarboximide and 3,4,9,10-perylenetetracarboxylic dianhydride, are determined. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373458
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  • 5
    Electronic Resource
    Electronic Resource
    Very-low-operating-voltage organic light-emitting diodes using a p-doped amorphous hole injection layer (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 410-412 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate the use of a p-doped amorphous starburst amine, 4, 4′, 4″-tris(N, N-diphenyl- amino)triphenylamine (TDATA), doped with a very strong acceptor, tetrafluoro- tetracyano-quinodimethane by controlled coevaporation as an excellent hole injection material for organic light-emitting diodes (OLEDs). Multilayered OLEDs consisting of double hole transport layers of p-doped TDATA and triphenyl-diamine, and an emitting layer of pure 8-tris-hydroxyquinoline aluminum exhibit a very low operating voltage (3.4 V) for obtaining 100 cd/m2 even for a comparatively large (110 nm) total hole transport layer thickness. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1343849
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  • 6
    Electronic Resource
    Electronic Resource
    Micromechanical properties of silicon-carbide thin films deposited using single-source chemical-vapor deposition (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 347-349 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 1,3-Disilabutane is used as a single-source precursor to deposit conformal silicon-carbide films on silicon atomic-force-microscopy cantilevers. By measuring the resonance frequency of the cantilever as a function of silicon-carbide film thickness and developing an appropriate model, the value of the film's elastic modulus is determined. This value is in good agreement with those reported for silicon-carbide films deposited using conventional dual-source chemical-vapor deposition. Additionally, we comment on the feasibility of integrating this process into the fabrication technology for microelectromechanical systems. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1383277
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  • 7
    Electronic Resource
    Electronic Resource
    Robust microfabricated field-effect sensor for monitoring molecular adsorption in liquids (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3875-3877 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that a microfabricated field-effect sensor located at the terminus of a freestanding cantilever can detect surface potential changes resulting from the adsorption of charged molecules in an aqueous environment. The charge sensitive region, defined by lightly doped silicon, is embedded within the heavily doped silicon cantilever. Since both the electrical trace and sensitive region are passivated with thermally diffused silicon dioxide, the entire cantilever can be immersed in buffer solutions and cleaned with strong acids without degrading its electrical response. As an example, we demonstrate that the device can reproducibly detect adsorption of positively charged poly-L-lysine (PLL) on silicon dioxide. We also demonstrate that PLL adsorption and pH can be measured in discrete solutions by scanning the cantilever through parallel, distinct streams within a microfluidic channel array. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1423776
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