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  • American Institute of Physics (AIP)  (3)
  • American Geophysical Union (AGU)
  • 2000-2004  (3)
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 13 (2001), S. 3247-3257 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of a vertical magnetic field on the integral heat transfer and the temporal dynamics of liquid metal Rayleigh–Bénard convection is studied in an experiment using a small Prandtl number (Pr(approximate)0.02) sodium potassium alloy Na22Kr78 as a test fluid. The test section is a rectangular box of large aspect ratio 20 : 10 : 1 that covers a parameter range of Rayleigh numbers, 103〈Ra〈105, and Chandrasekhar numbers, 0〈Q〈1.44×104. The integral heat transfer across the layer is evaluated from the measured temperatures at the upper and the lower boundary and the applied heat flux. Local, time-dependent temperatures are obtained from a four-element temperature probe placed in the middle of the liquid metal layer. The noncoplanar arrangement of the thermocouples enables the evaluation of the time-dependent temperature gradient vector that allows us to estimate the local isotropy properties of the time-dependent flow. From the damping effect of Joule dissipation, the convective heat transport decreases monotonically with increasing Chandrasekhar numbers. Fluctuations of the temperature field are damped significantly by the magnetic field. However, this effect is selective with respect to frequency. Long period fluctuations are strongly damped whereas short period fluctuations are less damped or may even be amplified. The observations show that significant convective heat transport is practically always associated with time-dependent flow. The fluctuating part of the local temperature gradient confirms the horizontal isotropy of the velocity field; no predominant orientation of time-dependent flow structures is established either with or without a magnetic field. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3566-3569 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe fast recovery at a wavelength of 1550 nm in a multiple-quantum-well (MQW) saturable absorber with InGaAsP quaternary wells and barriers using electric-field-induced carrier sweepout. The MQW SA is integrated with a distributed Bragg reflector in a p-type–intrinsic–n-type structure. Pump–probe measurements show that the recovery time can be reduced from 〉900 to 28 ps by application of a 151 kV/cm sweepout field. We measure the dependence of the recovery time on the energy of the saturating pulse and explain our results in terms of carrier dynamics in the sweepout field. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1442-1444 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A prominent theme in inorganic materials research is the creation of uniformly flat thin films and heterostructures over large wafers, which can subsequently be lithographically processed into functional devices. This letter proposes an approach that will lead to thin film topographies that are directly counter to the above-mentioned philosophy. Recent years have witnessed considerable research activity in the area of self-assembly of materials, stimulated by observations of self-organized behavior in biological systems. We have fabricated uniform arrays of nonplanar surface features by a spontaneous assembly process involving the oxidation of simple metals, especially under constrained conditions on a variety of substrates, including glass and Si. In this letter we demonstrate the pervasiveness of this process through examples involving the oxidation of Pd, Cu, Fe, and In. The feature sizes can be controlled through the grain size and thickness of the starting metal thin film. Finally, we demonstrate how such submicron scale arrays can serve as templates for the design and development of self-assembled, nanoelectronic devices. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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