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  • American Institute of Physics (AIP)  (5)
  • American Association for the Advancement of Science (AAAS)  (1)
  • Wiley-Blackwell
  • 2000-2004  (6)
  • 1
    Electronic Resource
    Electronic Resource
    Study of inhomogeneity of supercritical water by small-angle x-ray scattering (2000)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 112 (2000), S. 4203-4211 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Small-angle x-ray scattering (SAXS) experiments using synchrotron radiation were carried out for supercritical water along isotherms at the temperatures T=660.0, 661.5, 663.0, 677.0, and 687.5 K, from a gaslike density region to a liquidlike one, including an intermediate density region. The high-temperature and high-pressure sample holder for SAXS measurements suitable for supercritical water was redesigned for more precise measurements. The curves illustrating the density dependence of density fluctuations and correlation lengths show a slight shift of the maximum from critical isochore. The deviations become larger with increasing temperature. The results for the density fluctuations and correlation lengths for supercritical water are compared with those for supercritical CO2 and CF3H at T/Tc=1.02 and 1.06. The comparison allows us to draw the conclusion that the behavior in the long-range inhomogeneity of water in the supercritical state is in discord with the ordinary behaviors for other molecular substances. Density fluctuations in water are also compared with those of Ar and Hg calculated thermodynamically by use of the equations of state. The correlation of the symmetry between the contour of density fluctuations and the vapor–liquid coexistence curve is discussed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.480965
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  • 2
    Electronic Resource
    Electronic Resource
    Correlation time of density fluctuation for supercritical ethylene studied by dynamic light scattering (2002)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 116 (2002), S. 4985-4992 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Time dependence of density fluctuation for neat supercritical ethylene (C2H4) is investigated by dynamic light scattering at various densities in isothermal conditions of reduced temperatures Tr=T/Tc=1.02, 1.04, and 1.06. Time correlations of the density fluctuation for all thermodynamic states decay as single exponential functions with the time constant of submicrosecond. Critical slowing down of diffusive motions is observed in the time domain, and the correlation time of the density fluctuation becomes maximum at the extension of the gas–liquid coexistence curve on the P–T phase diagram. It is revealed that the time dependence of the density fluctuation just corresponds to the magnitude of static density fluctuation obtained by small-angle x-ray scattering measurements. By measuring correlation times as a function of scattering angle, the critical slowing down is thermodynamically discussed. It is elucidated experimentally that the critical slowing down of diffusive motions considerably correlates to the increase of specific heat capacity, the decrease of the thermal diffusivity, and rotational relaxation time in the supercritical state of the neat fluid. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1452112
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  • 3
    Electronic Resource
    Electronic Resource
    Nanometer-scale resolution of a chloromethylated calixarene negative resist in electron-beam lithography: Dependence on the number of phenolic residues (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 301-303 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated a chloromethylated calixarene, p-chloromethylmethoxcalix[n]arene (CMC[n]AOMe) (n=5,6,7), as a negative resist in electron-beam lithography. Each CMC[n]AOMe resist has a resolution of about 12 nm and a sensitivity of about 0.8 mC/cm2 which varies slightly with n (or molecular weight). A sub-10-nm Si wire has been fabricated by halide plasma etching and a CMC[n]AOMe resist as an etching mask. Because the resist pattern edge is smooth, Si wires with 7-nm width and 10-μm length were performed without any breaking. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126957
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  • 4
    Electronic Resource
    Electronic Resource
    Influence of interdot coupling on electron-wave interference in an open quantum-dot molecule (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2970-2972 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study the characteristics of the fluctuations, observed in the low-temperature magnetoconductance of an open quantum-dot molecule formed from a pair of split-gate quantum dots. The evolution of these fluctuations suggests a decrease in the typical area for coherent interference with decreasing dot-coupling strength. We discuss this behavior in terms of a transition from multi- to single-dot interference as a function of the interdot coupling. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1472471
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  • 5
    Electronic Resource
    Electronic Resource
    Maskless fabrication of field-emitter array by focused ion and electron beam (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3319-3321 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Niobium-gated field-emitter arrays with Pt tips were fabricated using focused ion and electron beams. A promising approach, based on a two-step etch process in a Nb/SiO2/Si structure, has been implemented for the suppression of beam-induced damage and contamination in the processed area during the production of the gate openings. Only the top Nb layer was removed for gate openings by physical sputtering using the focused ion beam. The underlying SiO2 was subsequently removed by wet etching. Deposition of Pt pillars into these gate openings using electron-beam-induced chemical reaction resulted in field emission at an applied gate bias of 50 V even without any thermal annealing process. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126638
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  • 6
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    Physics. Electron spin polarization in nanoscale constrictions (2004)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 2004-03-16
    Description: 〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Bird, Jonathan P -- Ochiai, Yuichi -- New York, N.Y. -- Science. 2004 Mar 12;303(5664):1621-2.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Department of Electrical Engineering, Arizona State University, Tempe, AZ 85287-5706, USA. jpbird@imap3.asu.edu〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/15016986" target="_blank"〉PubMed〈/a〉
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
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