ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
Characterisation of three-layer dielectric embedded into MDS-structure (Metal-Dielectric-Silicon) was provided in the dark and under light illumination. In the dark, increasing ofdifferential capacitance, simultaneously, with variation of differential conductivity of MDSstructureswas detected. In the light strong changing of capacitance part of impedance was firstlyobserved, demonstrating decreasing almost to zero values and restoring up to maximal values innarrow bang of voltage applied. Variation of capacitance exceeds significantly so called dielectriclayer capacitance, what interpreted as carriers exchanging between substrate and electronic states inSiNx probably due to three-layered kind of its nature
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/24/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.131-133.461.pdf
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