ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Hydrogen-exfoliation has become a viable approach to transfer SiC thin layers ontodifferent substrate materials. However, little attention has been paid to the exfoliation-inducingannealing conditions. To investigate the annealing conditions, 4H SiC wafers were implanted witheither 2.5×1016 H2+ cm-2 or 5.0×1016 cm-2at 37 KeV. Post-implant, multi-step annealing sequenceswere examined in order to promote more efficient blistering, and it was found that a lowtemperature initial annealing step (T ≈ 500°C) can decrease the annealing time necessary in thehigh temperature regime; this was attributed to a nucleation of hydrogen induced platelet defectsduring the low temperature annealing regime and efficient splitting during a higher temperature(900 °C) anneal. This process is similar to what is observed for InP and Si exfoliation, except thatthe annealing processes occur at higher temperature
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.855.pdf
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