ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
In order to identify an appropriate low-temperature surface passivation that could be usedfor bulk lifetime estimation of high resistivity (HR) (〉 1 k[removed info]·cm) silicon for radiation detectors,different passivating layers were evaluated on n-type and p-type standard Czochralski (CZ), HRmagnetic CZ and HR float zone (FZ) substrates. Minority carrier lifetime measurements wereperformed by means of a μW-PCD set-up. The results show that SiNx PECVD layers deposited atlow temperatures (≤ 250ºC) may be used to evaluate the impact of different processing steps andtreatments on the substrate characteristics for radiation detectors. First results are obtained about apreliminary thermal treatment experiment to evaluate the thermal stability of the passivating layers,as well as the potential impact of the generation of thermal donors on minority carrier lifetime
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/24/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.131-133.431.pdf
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