ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
SiC single crystal ingots were prepared onto different seed material using sublimation PVTtechniques and then their crystal quality was systematically compared. In this study, the conventionalSiC seed material and the new SiC seed material with an inserted SiC epitaxial layer on a seed surfacewere used as a seed for SiC bulk growth. The inserted epitaxial layer was grown by a sublimationepitaxy method called the CST with a low growth rate of 2μm/h. N-type 2”-SiC single crystalsexhibiting the polytype of 6H-SiC were successfully fabricated and carrier concentration levels ofbelow 1017/cm3 were determined from the absorption spectrum and Hall measurements. The slightlyhigher growth rate and carrier concentration were obtained in SiC single crystal ingot grown on newSiC seed materials with the inserted epitaxial layer on the seed surface, maintaining the high quality
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.9.pdf
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